In this paper, we extend our studies on the use of zero impact ionization and zero subthreshold swing field-effect-transistor (Z(2)-FET) as a capacitor-less one-transistor dynamic random access memory (1T-DRAM) through both experiment and TCAD simulation. The data retention time is measured as a function of biasing, temperature and device dimensions, leading to a simple predictive model. An alternative writing method using the source MOSFET is presented, which is potentially more compatible with the conventional DRAM array design. The operation of a Z(2)-FET memory array is discussed, in which the write and read signals are adapted from the single cell to achieve selective operation. Finally, we present simulations demonstrating that the Z(2)-FET can be used to store multiple bits thanks to the charges on both the top and bottom gate capacitors. (C) 2013 Elsevier Ltd. All rights reserved.