A new parameter extraction methodology based on split C-V is proposed for FDSOI MOS devices. To this end, a detailed capacitance theoretical analysis is first conducted emphasizing the usefulness of the Maserjian function. Split C-V measurements carried out on various FDSOI CMOS technologies show that the Maserjian function exhibits a power law dependence with inversion charge as proportional to Qi(-2) whatever the carrier type and gate oxide thickness. This feature enables to confirm the validity of a two-parameter simple capacitance model and allows for a reliable MOSFET parameter extraction in FDSOI devices. (C) 2013 Elsevier Ltd. All rights reserved.