The existence of deep levels of the transition metal Pd localized within the band gap of SiC is investigated. By using radioactive isotopes as tracer atoms, vanishing or arising peaks found in repeated DLTS measurements can be definitely assigned to a certain element due to the known half-life. In the present study, the radioactive isotope Pd-100 was recoil-implanted into 4H-SiC at the ISL of the HMI in Berlin. The isotope 100Pd decays with a half-life T-1/2 of 3.6 d to Rh-100 (T-1/2 = 20.8 h),. which itself decays to stable Ru-100. A deep level decreasing in concentration during the Pd-100 decay was found at 1.03 eV below the conduction band E-c in n-type 4H-SiC. It is definitely assigned to Pd. In p-type 4H-SiC no defect level with time dependent concentration was detected.