The wettability characteristics of both C and Si faces covered with their natural oxide of differently polished 6H-SiC wafers have been systematically determined using the contact angle measurement, before and after HF treatment. XPS was used to characterise the surface chemical state. In an original way and for the first time regarding SiC wafers, we proposed a fitting of the oxygen peak which allowed to calculate the area SiOH/SiO2 ratio. A strong correlation was found between the wettability increase induced by the HF treatment and the presence of polar hydrophilic SiOH groups on the surface.