Sublimation growth of AlN on the SiC substrate was carried out using the graphite crucible. The single crystal AlN could be grown by placing the Ta sheet in the graphite crucible. However, if the Ta sheet was not placed, AN could not be achieved and only the graphite layer was formed on the SiC substrate. It was confirmed by XPS that Ta combined with C and changed to TaC after the crystal growth. Since Ta acted as a carbon getter during the sublimation growth, single crystal AlN was achieved in the graphite crucible without graphitization of the substrate.