Formation of SiC delta-doped layers during epitaxial growth and applications of the delta-doped-layer structures to the SiC DACFET have been investigated. The delta-doped layers were grown in the SiC epitaxial films with a single N-2 gas pulse supplied within the ON period of the pulse valve during the CVD growth. The observed peak concentration is increased with increasing the ON period from 100ms to 300ms. The full-width at half-maximum (FWHM) of the delta-doped layers becomes narrower as lengthening the ON period within this range. It is observed that the dopant-concentration profile of the delta-doped layer grown with ON period of 1000ms is almost identical with that of 300ms. 2nm-thick delta-doped layers are successfully grown on the whole 2-inch wafer with good uniformity using the pulse-doping procedure with a single gas pulse with the ON period of 300ms. The electrical characteristics of the DACFET can be finely tuned by controlling the delta-doped-layer structures. The lowest on resistance of the fabricated 5 mum-gate DACFET is measured to be 14mOHMcm(2). The normally-off DACFET is also achieved with Ron = 27mOHMcm(2).