The near-infrared emission from Er and Si codoped ZnO film, synthesized by cosputtering from separated Er, Si, and ZnO targets, has been investigated. By building the multilayer film structure, controlling the Er concentration, and optimizing the annealing condition, the intensity of Er3+ related 1.53 mu m photoluminescence (PL), which originates from the transition of Er3+:I-4(13/2)-> I-4(15/2), can be modulated. It is shown that the maximum intensities of Er3+ related 1.53 mu m PL are obtained when the Si:ZnO/Er:Si:ZnO/Si:ZnO sandwiched multilayer film and the alternate Er: ZnO/Si:ZnO multilayer film were annealed at 1000 degrees C and 950 degrees C, respectively. The Er3+ related 1.54 mu m PL intensity of the multilayer film is higher than that of the Er:ZnO monolayer film. This can be attributed to the presence of the silicon nanocrystals that could act as sensitizers of Er3+ ions in the multilayer film. The PL of the sandwiched multilayer film and the alternate multilayer film were measured under different temperatures (15-300 K). The sandwiched multilayer film exhibits a nonmonotonic temperature dependence as well as the alternate multilayer film, which differs from that of Er-doped ZnO as previously reported. (C) 2011 Elsevier B.V. All rights reserved.