We have investigated photoluminescence and electrical properties of P-doped ZnTe layers grown by metalorganic vapor phase epitaxy as a function of VI/II ratio. Near band-edge emissions are strongly influenced by VI/II ratio. The low VI/II ratio corresponding to Zn-rich condition brings about heavy p-type doping with P as compared to Te-rich condition. The best VI/II ratio for obtaining high quality layer is one. A maximum carrier concentration of 5.4x10(18) cm(-3) is attained even for as-grown ZnTe layer. In this sample, the carrier concentration is almost independent of the measurement temperature, indicating conduction in an impurity band formed by shallow acceptor. (C) 2011 Elsevier B.V. All rights reserved.