Ti-added amorphous SiOx films were sputter-deposited into stacks of Pt/SiOx/Pt and Cu/SiOx/Pt. Optimally prepared Pt/SiOx/Pt exhibits unipolar resistive switching over 10(2) cycles, resistance ratio similar to 10(3), yet wide voltage distribution (2 similar to 7 V for SET, 0.5 similar to 1.5 V for RESET). Cu/SiOx/Pt exhibit similar endurance, resistance ratio up to 10(7), and SET and RESET voltages reduced to 1.8 similar to 4.2 V and 0.5 similar to 1 V. respectively. Cu diffusion into SiOx at the virgin state may play a role in resistive switching of Cu/SiOx/Pt stack besides of filament conduction. Ti-added amorphous SiOx films incorporating Cu electrode shows potential for resistive memory. (C) 2010 Elsevier B.V. All rights reserved.