For improving compatibility with IC processes, this work presents a low temperature process (<400 degrees C) to fabricate a small-sized-carbon nanotube (CNT) (<6 graphene layers) pattern by buffer layer (AlN) and CoCrPtOx catalyst precursor-assisted microwave plasma chemical vapor deposition (MPCVD). Without high temperature heating on the whole specimen, the low temperature process mainly results from selective local activation laser heating (>= 600 degrees C) to form the catalyst nanostructures, which are beneficial to low temperature H-plasma treatment to form catalyst nanoparticles for CNT growth. The functions of the buffer layer and the catalyst precursor are to help the heat dissipation and the small-sized CNT formation. (C) 2010 Elsevier B.V. All rights reserved.