Tungsten-doped tin oxide (SnO(2):W) transparent conductive films were prepared on quartz substrates by pulsed plasma deposition method with a post-annealing. The structure, chemical states, electrical and optical properties of the films have been investigated with tungsten-doping content and annealing temperature. The lowest resistivity of 6.67 x 10(-4) Omega cm was obtained, with carrier mobility of 65 cm(2) V(-1) s(-1) and carrier concentration of 1.44 x 10(20) cm(-3) in 3 wt.% tungsten-doping films annealed at 800 degrees C in air. The average optical transmittance achieves 86% in the visible region, and approximately 85% in near-infrared region, with the optical hand gap ranging from 4.05 eV to 4.22 eV. (C) 2009 Elsevier B.V. All rights reserved.