Undoped and phosphorus-doped Ag-based pastes were applied as circular contacts to the (1 1 1) surface of dendritic web n-type Si. Current-voltage characteristics of as-deposited contacts and contacts annealed at 780degreesC for 10 min, 950degreesC for 5 min, 1000degreesC for 10 min were measured and compared. Annealing above the Ag-Si eutectic temperature (835degreesC) yielded Si precipitation within the Ag matrix, resulting in increased current across the metal/semiconductor interface, The contact resistivity was significantly lower for P-doped (<0.04 Omega cm(2)) than for undoped (1.90 Omega cm(2)) Ag contacts, both of which were annealed at 1000degreesC. As supported by secondary ion mass spectrometry analyses, these results are attributed to an enhanced P doping level in the Si substrate after annealing the P-doped contacts. A p-n junction diode was demonstrated by alloying the Ag-P paste with p-type Si at 1000degreesC. The contact resistance was inferred from diode I-V data to be 0.013 Omega cm(2), a value which is comparable to the 0.010 Omega cm(2) target value for solar cell contacts. (C) 2002 Elsevier Science B.V. All rights reserved.