CuInSe2 films were electrodeposited on mechanical polished Mo substrates. The applied potential was adjusted to get a stoichiometric composition. The as-deposited films were annealed in a high vacuum system for a short time. The films have been characterized by X-ray diffraction, scanning electron microscopy. energy dispersive X-ray analysis, Auger electron spectroscopy. The results indicate that the crystallization of the films was greatly improved by the short time vacuum annealing process without significant change in composition. The capacitance-voltage measurement shows characteristic p-type behaviors. This annealing process after electrodeposition was proved to be a useful method to prepare the polycrystalline CuInSe2 films for solar cell application. (C) 2002 Elsevier Science B.V. All rights reserved.