S7 - S7 |
Damage reduction and sealing of low-k films by combined He and NH3 plasma treatment (vol 10, pg G76, 2007) Urbanowicz AM, Baklanov MR, Heijlen J, Travaly Y, Cockburn A |
C63 - C67 |
Corrosion of copper by water Szakalos P, Hultquist G, Wikmark G |
E17 - E19 |
Effect of water on the electrochemical oxidation of gas-phase SO2 in a PEM electrolyzer for H-2 production Staser J, Ramasamy RP, Sivasubramanian P, Weidner JW |
G85 - G88 |
Structural, magnetic, and dielectric properties of sol-gel-derived multiferroic Bi1-xSrxFe0.8Mn0.2O3 ceramics Wei J, Xue DS |
K51 - K54 |
Functional porous tin oxide thin films fabricated by inkjet printing process Lee DH, Chang YJ, Stickle W, Chang CH |
K55 - K59 |
Silicon nanowires synthesized via microwave-assisted chemical vapor deposition Ndiege N, Shannon M, Masel RI |
K60 - K62 |
Effect of structural morphology on electrochemical properties of carbon nanotubes directly grown on Ti foil Fang WC, Leu MS, Chen KH, Chen LC, Huang JH |
A241 - A244 |
Thermal reactions of LiPF6 with added LiBOB - Electrolyte stabilization and generation of LiF4OP Xiao A, Yang L, Lucht BL |
A245 - A249 |
High-capacity electric double layer capacitor using three-dimensional porous current collector Yao M, Okuno K, Iwaki T, Kato M, Tanase S, Emura K, Sakai T |
A250 - A254 |
Electrochemical double-layer capacitance of MoS2 nanowall films Soon JM, Loh KP |
A255 - A260 |
Toward real-time simulation of physics based lithium-ion battery models Subramanian VR, Boovaragavan V, Diwakar VD |
B187 - B190 |
Electrochemical characteristics of ZnO-nanowire/yttria-stabilized zirconia composite as a cathode for SOFCs Park HJ, Kim S |
B191 - B195 |
Structural and electrochemical characterization of Pt/CMK-5 via CTAB introduced into the microwave heating process Zhou JH, He JP, Dang WJ, Zhao GW, Zhang CX, Mei TQ |
B196 - B200 |
An electro-osmotic fuel pump for direct methanol fuel cells Buie CR, Kim D, Litster S, Santiago JG |
B201 - B205 |
Development of method for synthesis of Pt-Co cathode catalysts for PEM fuel cells Li XG, Colon-Mercado HR, Wu G, Lee JW, Popov BN |
D121 - D123 |
Anisotropic growth of nanostructures in germanium electroplating Huang Q, Deligianni H, Romankiw LT |
D124 - D126 |
Single-crystalline germanium thin films by electrodeposition and solid-phase epitaxy Huang Q, Bedell SW, Saenger KL, Copel M, Deligianni H, Romankiw LT |
D127 - D129 |
Pore etching in III-V and II-VI semiconductor compounds in neutral electrolyte Tiginyanu IM, Ursaki VV, Monaico E, Foca E, Foll H |
D130 - D133 |
A technique for fabricating uniform double-sided porous silicon wafers James TD, Keating AJ, Parish G, Faraone L, Musca CA |
D134 - D138 |
One-step Electrodeposition of ZnO2-ZnS thin-film mixtures onto n-InP(111) and n-InP(100) substrates Henriquez R, Gomez H, Grez P, Lincot D, Froment M, Dalchiele EA, Riveros G |
H313 - H316 |
Reduced-pressure chemical vapor deposition of epitaxial ge films on si(001) substrates using GeCl4 Park JS, Curtin M, Major C, Bengtson S, Carroll M, Lochtefeld A |
H317 - H320 |
Passivation of a Si(100) surface by S from solution Ali MY, Tao M |
H321 - H323 |
Enhanced mobility of rubrene thin-film transistors with a polymer dielectric on plastic substrate Jeong SH, Choi JM, Hwang DK, Park SW, Im S |
H324 - H326 |
Improved electrical characteristics of fully depleted ultrathin SOI MOSFETs annealed in high-pressure hydrogen ambient Son Y, Chang M, Park H, Rahman S, Baek S, Hwang H |
H327 - H330 |
Effects of thermally oxidized-SiN gate oxide on 4H-SiC substrate Moon JH, Song HK, Yim JH, Seo HS, Oh MS, Lee JH, Kim HJ, Cheong KY, Bahng W, Kim NK |
H331 - H333 |
Influence of process flow on the characteristics of strained-Si nMOSFETs Lam KT, Wu SL, Chang SJ, Wang YP, Liaw UH |
H334 - H336 |
Leakage current characteristic of vertical GaN-Based light emitting diodes with passivation structures Kim S, Bae DK, Choi JH, Jang JH, Lee JS |
H337 - H339 |
Al-2% Si induced crystallization of amorphous silicon DelRio FW, Lai J, Ferralis N, Liu TJK, Maboudian R |
H340 - H343 |
Effects of copper oxide/gold electrode as the source-drain electrodes in organic thin-film transistors Park JW, Baeg KJ, Ghim J, Kang SJ, Park JH, Kim DY |
H344 - H346 |
Ag/Au diffusion wafer bonding for thin-GaN LED fabrication Chang CL, Chuang YC, Liu CY |
H347 - H350 |
Effects of hydroxyl groups in gate dielectrics on the hysteresis of organic thin film transistors Choi CG, Baez BS |
J143 - J145 |
Characteristics of Pr2O3 gate dielectric thin-film transistors fabricated on fluorine-ion-implanted polysilicon films Chang CW, Deng CK, Huang JJ, Chang HR, Lei TF |
J146 - J149 |
Anode properties of lithium storage alloy electrodes prepared by gas-deposition Sakaguchi H, Toda T, Nagao Y, Esaka T |
J150 - J153 |
Selective detection of Hg (II) ions from Cu(II) and Pb(II) using AlGaN/GaN high electron mobility transistors Wang HT, Kang BS, Chancellor TF, Lele TP, Tseng Y, Ren F, Pearton SJ, Dabiran A, Osinsky A, Chow PP |