We have investigated and reported the results on oxidized-SiN gate oxides on n-type 4H-SiC. The quality of this oxide has been compared with thermal nitrided and dry oxides. In the oxidized-SiC sample, a significant improvement in oxide deposition/growth rate has been obtained while the metal-oxide-semiconductor characteristics of the oxide are comparable to the thermal-nitrided oxide and much better than dry oxide. This achievement has been explained using a proposed chemical model. (c) 2007 The Electrochemical Society.