Journal of Crystal Growth

Journal of Crystal Growth, Vol.308, No.2 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (32 articles)

237 - 240	Single-crystal growth and magnetic properties of the metallic molybdate pyrochlore Sm2Mo2O7 Singh S, Suryanarayanan R, Martin RS, Dhalenne G, Revcolevschi A
241 - 246	Growth of cubic SiC single crystals by the physical vapor transport technique Semmelroth K, Krieger M, Pensl G, Nagasawa H, Puesche R, Hundhausen M, Ley L, Nerding M, Strunk HP
247 - 251	Dissolution of oxygen precipitates in germanium-doped Czochralski silicon during rapid thermal annealing Chen JH, Yang DR, Ma XY, Li H, Fu LM, Li M, Que DL
252 - 257	Crystal growth and characterization of AlGaN/GaN heterostructures prepared on vicinal-cut sapphire (0001) substrates Chuang RW, Yu CL, Chang SJ, Chang PC, Lin JC, Kuan TM
258 - 262	In situ growth observation of GaN/AlGaN superlattice structures by simultaneous X-ray diffraction and ellipsometry Simbrunner C, Li T, Bonanni A, Kharchenko A, Bethke J, Lischka K, Sitter H
263 - 268	Synthesis and Raman scattering of beta-SiC/SiO2 core-shell nanowires Meng A, Li ZJ, Zhang JL, Gao L, Li HJ
269 - 277	Selective silicon nanoparticle growth on high-density arrays of silicon nitride Coffee SS, Shahrjerdi D, Banerjee SK, Ekerdt JG
278 - 282	Macroscopic and microscopic charging effects of Si nanocrystals embedded in a SiO2 layer Kim JH, Oh DH, Lee SJ, Lee KH, Cho WJ, Kim TW, Park YJ
283 - 289	Effect of thickness on structural and electrical properties of GaN films grown on SiN-treated sapphire Bchetnia A, Toure A, Lafford TA, Benzarti Z, Halidou I, Habchi MM, El Jani B
290 - 296	The suppression of temperature fluctuations by a rotating magnetic field in a high aspect ratio Czochralski configuration Grants I, Gerbeth G
297 - 301	Butt-coupled MOVPE growth for high-performance electro-absorption modulator integrated with a DFB laser Cheng YB, Pan JQ, Liang S, Feng W, Liao ZY, Zhou F, Wang BJ, Zhao LJ, Zhu HL, Wang W
302 - 308	Growth of dislocation-free GaN islands on Si(111) using a scandium nitride buffer layer Moram MA, Kappers MJ, Joyce TB, Chalker PR, Barber ZH, Humphreys CJ
309 - 313	Intergrowth and thermoelectric properties in the Bi-Ca-Co-O system Luo XG, Jing YC, Chen H, Chen XH
314 - 320	Misfit reduction by a spinel layer formed during the epitaxial growth of ZnO on sapphire using a MgO buffer layer Bakin A, Kioseoglou J, Pecz B, El-Shaer A, Mofor AC, Stoemenos J, Waag A
321 - 324	Characteristics comparison between GaN epilayers grown on patterned and unpatterned sapphire substrate (0001) Song JC, Lee SH, Lee IH, Seol KW, Kannappan S, Lee CR
325 - 329	Investigation of crystallographic tilting in GaSb/GaAs heteroepitaxial structure by high-resolution X-ray diffraction Qiu YX, Li MC, Liu GJ, Zhang BS, Wang Y, Zhao LC
330 - 333	Study on the initial growth process of crystalline silicon films on aluminum-coated polyethylene napthalate by Raman spectroscopy Li JS, Wang JX, Yin M, Gao PQ, He DY, Chen Q, Li YL, Shirai H
334 - 339	The role of solution composition in chemical bath deposition of epitaxial thin films of PbS on GaAs(100) Osherov A, Ezersky V, Golan Y
340 - 347	Bio-inspired fabrication of ZnO nanorod arrays and their optical and photoresponse properties An XQ, Cao CB, Zhu HS
348 - 351	Crystal growth of lutetium oxyorthosilicate (LSO) by melt-supply double crucible Czochralski (DC-CZ) method Matsumura H, Watanabe S, Nakamura O, Ito T
352 - 359	Oscillatory thermocapillary convection in a liquid bridge: Part 1-1g Experiments Sakurai M, Ohishi N, Hirata A
360 - 365	Oscillatory thermocapillary convection in a liquid bridge: Part 2- Drop shaft experiments Sakurai M, Ohishi N, Hirata A
366 - 375	Simulation of growth dynamics for nearly epitaxial films Nilsen O, Karlsen OB, Kjekshus A, Fjellvag H
376 - 381	Twinned domains in epitaxial ZnO/SnO2-cosubstituted In2O3 thin films Zhang M, Buchholz DB, Xie SJ, Chang RPH
382 - 391	Comparative growth study of garnet crystal films fabricated by pulsed laser deposition May-Smith TC, Eason RW
392 - 397	Molecular beam epitaxial growth and characterizations of Co-Mn-Ge Heusler thin films Sim CH, Ko V, Teo KL, Guo ZB, Liew T, Chong TC
398 - 405	Morphology-controlled synthesis of lead iodine compounds from lead foils and iodine Zheng Z, Wang SM, Li DP, Liu AR, Huang BJ, Zhao HX, Zhang LZ
406 - 411	The growth parameter influence on the crystal quality of InAsSb grown on GaAs by molecular beam epitaxy Gao HC, Wang WX, Jiang ZW, Liu LS, Zhou JM, Chen H
412 - 416	Growth and characterization of nonpolar ZnO (1 0 (1)over-bar 0) epitaxial film on gamma-LiAlO2 substrate by chemical vapor deposition Chou MMC, Chang LW, Chung HY, Huang TH, Wu JJ, Chen CW
417 - 423	Controlled growth and morphology evolution of urchin-like ZnO/MgO hierarchical structures Qin LR, Zhao JW, Zhang LD, Zou XW
424 - 429	Thickness-dependent dielectric properties of nanoscale Pt/(Pb,Ba)ZrO3/BaPbO3 capacitors Wu LJ, Wu JM
430 - 430	Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition (vol 306, pg 297, 2007) Hori T, Danno K, Kimoto T