Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition (vol 306, pg 297, 2007)

Hori T; Danno K; Kimoto T

Journal of Crystal Growth, Vol.308, No.2, 430-430, 2007

DOI10.1016/j.jcrysgro.2007.08.023 Export Citation

Fast homoepitaxial growth of 4H-SiC with low basal-plane dislocation density and low trap concentration by hot-wall chemical vapor deposition (vol 306, pg 297, 2007)

Hori T, Danno K, Kimoto T