Journal of Crystal Growth

Journal of Crystal Growth, Vol.352, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (58 articles)

1 - 1	The Proceedings of the 18th American Conference on Crystal Growth and Epitaxy (ACCGE-18 OMVPE-15) 31 July-05 August, 2011 Preface Qiu SR, Bhat R, Caneau C
2 - 2	The Proceedings of the 18th American Conference on Crystal Growth and Epitaxy (ACCGE-18 OMVPE-15) 31 July-05 August, 2011 Preface Bourret E, Tischler M
3 - 8	Growth mechanisms and defect structures of B12As2 epilayers grown on 4 H-SiC substrates Zhang Y, Chen H, Dudley M, Zhang Y, Edgar JH, Gong YY, Bakalova S, Kuball M, Zhang LH, Su D, Zhu YM
9 - 15	Effect of power arrangement on the crystal shape during the Kyropoulos sapphire crystal growth process Chen CH, Chen JC, Lu CW, Liu CM
16 - 20	VGF growth of 4 in. Ga-doped germanium crystals under magnetic and ultrasonic fields Frank-Rotsch C, Juda U, Ubbenjans B, Rudolph P
21 - 26	On the role of thermal gradient related stress in intrinsic defect formation during single crystal silicon growth from the melt Vanhellemont J
27 - 30	Development of large size high-purity germanium crystal growth Wang GJ, Sun YC, Yang G, Xiang WC, Guan YT, Mei DM, Keller C, Chan YD
31 - 34	Single crystal growth of Ga-2(SexTe1-x)(3) semiconductors and defect studies via positron annihilation spectroscopy Abdul-Jabbar NM, Bourret-Courchesne ED, Wirth BD
35 - 38	Scintillation properties of Ce doped Gd2Lu1(Ga,Al)(5)O-12 single crystal grown by the micro-pulling-down method Kamada K, Yanagida T, Pejchal J, Nikl M, Endo T, Tsutsumi K, Usuki Y, Fujimoto Y, Fukabori A, Yoshikawa A
39 - 42	Volume production of high quality SiC substrates and epitaxial layers: Defect trends and device applications Muller GS, Sanchez EK, Hansen DM, Drachev RD, Chung G, Thomas B, Zhang J, Loboda MJ, Dudley M, Wang H, Wu F, Byrappa S, Raghothamachar B, Choi G
43 - 46	Radial and axial impurity distribution in high-purity germanium crystals Yang G, Wang GJ, Xiang WC, Guan YT, Sun YC, Mei DM, Gray B, Chan YD
47 - 52	Reduction of polycrystalline grains region near the crucible wall during seeded growth of monocrystalline silicon in a unidirectional solidification furnace Gao B, Nakano S, Harada H, Miyamura Y, Sekiguchi T, Kakimoto K
53 - 58	The influence of core geometry on the crystallography of silicon optical fiber Morris S, McMillen C, Hawkins T, Foy P, Stolen R, Ballato J, Rice R
59 - 62	Laser heated pedestal growth of potassium lithium niobate for UV generation Maxwell G, Petersen A, Dalton D, Ponting B
63 - 66	Synthesis, characterization, crystal structure and NLO properties of a new mixed crystal potassium sodium ammonium dihydrogenphosphate K0.23Na0.23(NH4)(0.54)H2PO4 Ramasamy G, Meenakshisundaram S
67 - 71	Growth improvement and quality evaluation of ZnGeP2 single crystals using vertical Bridgman method Zhang GD, Tao XT, Wang SP, Shi Q, Ruan HP, Chen LL
72 - 77	Epitaxial growth of quasi-phase matched GaP for nonlinear applications: Systematic process improvements Tassev V, Snure M, Peterson R, Bedford R, Bliss D, Bryant G, Mann M, Goodhue W, Vangala S, Termkoa K, Lin A, Harris JS, Fejer MM, Yapp C, Tetlak S
78 - 83	Crystal growth and characterization of alkali-earth halide scintillators Bourret-Courchesne ED, Bizarri GA, Borade R, Gundiah G, Samulon EC, Yan Z, Derenzo SE
84 - 87	Growth and scintillation properties of Pr doped Gd-3(Ga,Al)(5)O-12 single crystals Kamada K, Yanagida T, Pejchal J, Nikl M, Endo T, Tsutumi K, Usuki Y, Fujimoto Y, Fukabori A, Yoshikawa A
88 - 90	2 inch diameter single crystal growth and scintillation properties of Ce:Gd3Al2Ga3O12 Kamada K, Yanagida T, Endo T, Tsutumi K, Usuki Y, Nikl M, Fujimoto Y, Fukabori A, Yoshikawa A
91 - 94	Large size single crystal growth of Lu3Al5O12:Pr and their uniformity of scintillation properties Kamada K, Yanagida T, Endo T, Tsutumi K, Yoshino M, Kataoka J, Usuki Y, Fujimoto Y, Fukabori A, Yoshikawa A
95 - 98	Effects of ionic radius control at Y site by Sc doping on crystal growth and physical properties for Ce:LiYF4 single crystals Yokota Y, Yanagida T, Kawacuchi N, Fukuda K, Yoshikawa A
99 - 102	Single crystal Ce doped scintillator material with garnet structure sensitive to gamma ray and neutron radiation Solodovnikov D, Weber MH, Haven DT, Lynn KG
103 - 105	Crystal growth and characterization of 9,10-diphenylanthracene van Loef EV, Mukhopadhyay S, Zaitseva N, Payne S, Shah KS
106 - 109	Crystal growth and dopant segregation of Ce:LiSrAlF6 and Eu:LiSrAlF6 crystals with high dopant concentrations Yamaji A, Yokota Y, Yanagida T, Kawaguchi N, Futami Y, Fujimoto Y, Yoshikawa A
110 - 114	Dopant segregation in rare earth doped lutetium aluminum garnet single crystals grown by the micro-pulling down method Sugiyama M, Yokota Y, Fujimoto Y, Yanagida T, Futami Y, Kurosawa S, Yoshikawa A
115 - 119	New single crystal scintillators: CsCaCl3:Eu and CsCal(3):Eu Zhuravleva M, Blalock B, Yang K, Koschan M, Melcher CL
120 - 123	Growth by the Multi-tube Physical Vapour Transport method and characterisation of bulk (Cd,Zn)Te Choubey A, Veeramani P, Pym ATG, Mullins JT, Sellin PJ, Brinkman AW, Radley I, Basu A, Tanner BK
124 - 128	Growth of Yb-doped Y2O3, Sc2O3, and Lu2O3 single crystals by the micro-pulling-down technique and their optical and scintillation characterization Fukabori A, Chani V, Kamada K, Yoshikawa A
129 - 132	Optical and scintillation properties of Ca3NbGa3Si2O14 single crystal grown by micro-pulling down method Futami Y, Yokota Y, Sato M, Yanagida T, Kawaguchi N, Fujimoto Y, Tota K, Onodera K, Yoshikawa A
133 - 136	A comparison of the effect of Ca2+ codoping in cerium doped GSO with that of LSO and YSO Koschan M, Yang K, Zhuravleva M, Melcher CL
137 - 142	Crystal growth, structure, crystalline perfection and characterization of zinc magnesium ammonium sulfate hexahydrate mixed crystals ZnxMg(1-x)(NH4)(2)(SO4)(2) center dot 6H(2)O Ramasamy G, Bhagavannarayana G, Madhurambal G, Meenakshisundaram S
143 - 146	Structural defects and microindentation analysis of zone melted Bi2Te3-xSex whiskers Jariwala B, Shah DV
147 - 150	Crystal growth and physical properties of shape-controlled La3Ta0.5Ga5.5O14 single crystals by micro-pulling-down method Yokota Y, Sato M, Futami Y, Tota K, Yanagida T, Onodera K, Yoshikawa A
151 - 154	Calcite growth-rate inhibition by fulvic acid and magnesium ion-Possible influence on biogenic calcite formation Reddy MM
155 - 157	Nucleation rate enhancement of porcine insulin by application of an external AC electric field Koizumi H, Tomita Y, Uda S, Fujiwara K, Nozawa J
158 - 162	Growth and characterization of Hexakis(thiourea)nickel(II) nitrate crystals Muthu K, Meenakashisundaram SP
163 - 166	Crystal growth, structure and characterization of p-Toluidinium picrate Muthu K, Meenakshisundaram S
167 - 172	Numerical investigation of the effect of heat shield shape on the oxygen impurity distribution at the crystal-melt interface during the process of Czochralski silicon crystal growth Teng YY, Chen JC, Huang CC, Lu CW, Wun WT, Chen CY
173 - 176	Modeling of incorporation of oxygen and carbon impurities into multicrystalline silicon ingot during one-directional growth Kutsukake K, Ise H, Tokumoto Y, Ohno Y, Nakajima K, Yonenaga I
177 - 180	Thermodynamical analysis of polytype stability during PVT growth of SiC using 2D nucleation theory Shiramomo T, Gao B, Mercier F, Nishizawa S, Nakano S, Kangawa Y, Kakimoto K
181 - 185	Progress in large area organometallic vapor phase epitaxy for III-V multijunction photovoltaics Fetzer CM, Liu XQ, Chang J, Hong W, Palmer A, Bhusari D, Jun B, Lau M, Lee H
186 - 189	Organometallic vapor phase epitaxy growth of upright metamorphic multijunction solar cells Liu XQ, Fetzer CM, Rehder E, Cotal H, Mesropian S, Law D, King RR
190 - 193	Morphological control of MgxZn1-xO layers grown on Ga:ZnO/glass substrates for photovoltaics Duan ZQ, Lu YC, Du Pasquier A
194 - 198	Management of highly-strained heterointerface in InGaAs/GaAsP strain-balanced superlattice for photovoltaic application Wang YP, Ma SJ, Watanabe K, Sugiyama M, Nakano Y
199 - 202	AlInN MOVPE: growth chemistry and analysis of trends Lobanova AV, Segal AS, Yakovlev EV, Talalaev RA
203 - 208	Overgrowth of GaN on GaN nanowires produced by mask-less etching Frajtag P, Hosalli AM, Samberg JP, Colter PC, Paskova T, El-Masry NA, Bedair SM
209 - 213	High growth rate MOVPE of Al(Ga)N in planetary reactor Lundin WV, Nikolaev AE, Yagovkina MA, Brunkov PN, Rozhavskaya MM, Ber BY, Kazantsev DY, Tsatsulnikov AF, Lobanova AV, Talalaev RA
214 - 217	Growth optimization toward low angle incidence microchannel epitaxy of GaN using ammonia-based metal-organic molecular beam epitaxy Lin CH, Abe R, Uchiyama S, Maruyama T, Naritsuka S
218 - 223	Imaging transport in nanowires using near-field detection of light Haegel NM, Chisholm DJ, Cole RA
224 - 228	Characterization of nanocrystalline cobalt doped TiO2 sol-gel material Kirit S, Dimple S
229 - 234	Uniformity improvement of selectively-grown InGaAs micro-discs on Si Sugiyama M, Kondo Y, Takenaka M, Takagi S, Nakano Y
235 - 238	Studies about wafer bow of freestanding GaN substrates grown by hydride vapor phase epitaxy Lipski F, Klein M, Yao X, Scholz F
239 - 244	Suppressed lattice relaxation during InGaAs/GaAsP MQW growth with InGaAs and GaAs ultra-thin interlayers Fujii H, Wang YP, Watanabe K, Sugiyama M, Nakano Y
245 - 248	Effect of hetero-interfaces on in situ wafer curvature behavior in InGaAs/GaAsP strain-balanced MQWs Ma SJ, Wang YP, Sodabanlu H, Watanabe K, Sugiyama M, Nakano Y
249 - 252	Multiwafer zinc diffusion in an OMVPE reactor Pitts OJ, Benyon W, Goodchild D, SpringThorpe AJ
253 - 257	Controlled formation of GaAs pn junctions during hydride vapor phase epitaxy of GaAs Schulte KL, Rance WL, Reedy RC, Ptak AJ, Young DL, Kuech TF
258 - 261	Impurity incorporation in orientation patterned GaAs grown by low pressure HVPE Snure M, Jimenez J, Hortelano V, Swider S, Mann M, Tassev V, Lynch C, Bliss D