Journal of Crystal Growth

Journal of Crystal Growth, Vol.316, No.1 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (38 articles)

1 - 5	Effects of chlorine drag on the annealing-induced abnormal grain growth in polycrystalline CdTe Consonni V, Feuillet G
6 - 9	Growth of nonpolar m-plane GaN (10-10) single crystal on (100) LiAlO2 substrate by a newly designed hydride vapor phase epitaxy Chou MMC, Chen CL, Lu JW, Li CA, Hsu CWC, Liu C
10 - 14	Epitaxial growth of (100)-oriented beta-FeSi2 film on 3C-SiC(100) plane Akiyama K, Kadowaki T, Hirabayashi Y, Yoshimoto M, Funakubo H, Kaneko S
15 - 19	Optimizing the growth procedures for CdSe crystal by thermal analysis techniques Zeng TX, Zhao BJ, Zhu SF, He ZY, Chen BJ, Tan ZY
20 - 24	Microhardness and structural defects of GaSe layered semiconductor Borisenko EB, Kolesnikov NN, Borisenko DN, Bozhko SI
25 - 29	Enhanced growth and photoluminescence properties of SnxNy (x > y) nanowires grown by halide chemical vapor deposition Zervos M, Othonos A
30 - 36	The influence of various MOCVD parameters on the growth of Al1-xInxN ternary alloy on GaN templates Kim-Chauveau H, de Mierry P, Chauveau JM, Duboz JY
37 - 41	Structural and vibrational properties of hydrothermally grown ZnO2 nanoparticles Escobedo-Morales A, Esparza R, Garcia-Ruiz A, Aguilar A, Rubio-Rosas E, Perez R
42 - 45	Investigation of AlN buffer layers on 6H-SiC for AlInN HEMTs grown by MOVPE Behmenburg H, Giesen C, Srnanek R, Kovac J, Kalisch H, Heuken M, Jansen RH
46 - 50	Axial growth of Zn2GeO4/ZnO nanowire heterojunction using chemical vapor deposition Cao BB, Chen JJ, Huang R, Ikuhara YH, Hirayama T, Zhou WL
51 - 55	Plasma-assisted electroepitaxy as a method for the growth of GaN layers Novikov SV, Staddon CR, Kent AJ, Foxon CT
56 - 59	Properties of molecular beam epitaxially grown ScAs:InGaAs and ErAs:InGaAs nanocomposites for thermoelectric applications Liu X, Ramu AT, Bowers JE, Palmstrom CJ, Burke PG, Lu H, Gossard AC
60 - 66	High growth rate 4H-SiC epitaxial growth using dichlorosilane in a hot-wall CVD reactor Chowdhury I, Chandrasekhar MVS, Klein PB, Caldwell JD, Sudarshan T
67 - 70	Characterization of an AlGaAs/GaAs quantum well prepared on objects of pyramidal shape Soltys J, Kudela R, Kucera M, Elias P, Novak J, Cambel V, Vavra I, Kostic I
71 - 74	Epitaxial SrRuO3/BiFeO3/SrRuO3 heterostructure sputtered at low temperature Zhao QX, Ma JK, Wei DY, Wang KM, Li XH, Zhang XY, Liu BT
75 - 80	Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition Huang Y, Ryou JH, Dupuis RD, Pflugl C, Capasso F, Sun KW, Fischer AM, Ponce FA
81 - 84	Dual-temperature encapsulation of phosphorus in germanium delta-layers toward ultra-shallow junctions Scappucci G, Capellini G, Klesse WM, Simmons MY
85 - 89	Investigation of thermal behavior and crystal growth of iron pnictides using Sn flux Peng JB, Sun GL, Lin CT
90 - 96	Gallium nitride powders: Mechanism of ammonothermal synthesis, ball-mill assisted rare earth doping and uniform electrophoretic deposition Thomas T, Guo XM, Shi JX, Lepak LA, Chandrashekhar MVS, Li KW, DiSalvo FJ, Spencer MG
97 - 100	The presence of CuGaSe2 interface layer in the growth of Cu-rich CuInSe2/GaAs(001) epitaxial films Arthibenyakul B, Chityuttakan C, Chatraphorn S
101 - 105	Role of interfacial oxygen on the quality and strain stability of pseudomorphic silicon-germanium layers grown on Si substrates Bedell SW, Adam TN, Turansky A, Sadana DK
106 - 117	Amelogenin as a promoter of nucleation and crystal growth of apatite Uskokovic V, Li W, Habelitz S
118 - 125	Cocrystal formation in solution: Inducing phase transition by manipulating the amount of cocrystallizing agent Gagniere E, Mangin D, Puel F, Valour JP, Klein JP, Monnier O
126 - 131	Development of CdS nanorods of high aspect ratio under hydrothermal conditions with PEG template Jothi NSN, Christy PD, Suganthi ARB, Ramalingam G, Sagayaraj P
132 - 136	Nucleation kinetics, micro-crystallization and etching studies of L-histidine trifluoroacetate crystal Sun GH, Zhang GH, Wang XQ, Xu D
137 - 144	Large-scale synthesis of tungsten single-crystal microtubes via vapor-deposition process Wang SL, He YH, Liu XL, Zhang QA, Zou J, Huang H, Song M, Huang BY, Liu CT, Du Y
145 - 148	Fabrication of ferromagnetic GaMnSb by thermal diffusion of evaporated Mn Yang GD, Zhu F, Dong S
149 - 152	As-pressure influence on the surface corrugation in the homoepitaxial growth of GaAs (631)A Cruz-Hernandez E, Shimomura S, Lopez-Lopez M, Vazquez-Cortes D, Mendez-Garcia VH
153 - 157	Large SiO2-substituted GeO2 single-crystals with the alpha-quartz structure Armand P, Clement S, Balitsky D, Lignie A, Papet P
158 - 163	Formation mechanism of scattering centers in BaMgF4 single crystals Zhao CC, Zhang LH, Hang Y, He XM, Yin JG, Hu PC, Chen GZ, He MZ, Huang HA, Zhu YY
164 - 171	Characterization of a calcium phospho-silicated apatite with iron oxide inclusions Desport B, Carpena J, Lacout JL, Borschneck D, Gattacceca J
172 - 176	Crystallographic features of the primary Al3Zr phase in as-cast Al-1.36 wt% Zr alloy Li L, Zhang YD, Esling C, Jiang HX, Zhao ZH, Zuo YB, Cui JZ
177 - 184	Effects of rotating magnetic fields on thermocapillary flow in a floating half-zone Yao LP, Zeng Z, Li XH, Chen JQ, Zhang YX, Mizuseki H, Kawazoe Y
185 - 190	Morphology control of hexagonal boron nitride by a silane coupling agent Ma XK, Lee NH, Oh HJ, Jung SC, Lee WJ, Kim SJ
191 - 195	Annealing effects on the size of Si-nanocrystals embedded in bulk SiO Ke WW, Feng X, Huang YD
196 - 200	Interferometric in-situ observation during nucleation and growth of WO3 nanocrystals in vapor phase Kimura Y, Miura H, Tsukamoto K, Li CR, Maki T
201 - 201	Simulation of metastable zone width and induction time for a seeded aqueous solution of potassium sulfate (vol 312, pg 2734, 2010) Kobari M, Kubota N, Hirasawa I
202 - 202	The carbon distribution in multicrystalline silicon ingots grown using the directional solidification process (vol 312, pg 1282, 2010) Teng YY, Chen JC, Lu CW, Chen CY