Journal of Crystal Growth

Journal of Crystal Growth, Vol.507 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (74 articles)

1 - 9	Effects of succinic acid and adipic acid on the metastable width of glutaric acid in acetic acid Huang YL, Lu JJ, Chen HL, Du WW, Wang XQ
10 - 15	Ternary Pb1-xCdxSe films grown by molecular beam epitaxy on GaAs/ZnTe hybrid substrates Chusnutdinow S, Szot M, Schreyeck S, Aleszkiewicz M, Kucherenko IV, Muratov AV, Yakovlev VA, Wojtowicz T, Karczewski G
16 - 22	Scintillation properties and increased vacancy formation in cerium and calcium co-doped yttrium aluminum garnet Dickens PT, Haven DT, Friedrich S, Lynn KG
23 - 30	Investigation on Cd1-xMnxTe grown by traveling heater method with redissolution process and Te inclusions on carrier transport uniformity of detector Shi HZ, Zhang JJ, Ling LW, Zhao SH, Min JH, Liang XY, Huang J, Tang K, Wang LJ
31 - 37	Na2Mo2O7 scintillating crystals: Growth, morphology and optical properties Grigorieva VD, Shlegel VN, Ivannikova NV, Bekker TB, Yelisseyev AP, Kuznetsov AB
38 - 45	The effect of solution conditions on the crystal morphology of beta-HMX by molecular dynamics simulations Li J, Jin SH, Lan GC, Xu ZS, Wu NN, Chen SS, Li LJ
46 - 49	Improved performance of mid-infrared superlattice light emitting diodes grown epitaxially on silicon Muhowski AJ, Bogh CL, Heise RL, Boggess TF, Prineas JP
50 - 57	Numerical simulation of heat and mass transfer during Czochralski silicon crystal growth under the application of crystal-crucible counter- and iso-rotations Nguyen THT, Chen JC, Hu C, Chen CH
58 - 64	Habit prediction of 3,4,5-trinitro-1H-pyrazole in four solvent mediums using a molecular dynamics simulation Chen LZ, She CC, Pan HX, Wang JL, Cao DL
65 - 69	Molecular beam epitaxy and characterization of AlGaN nanowire ultraviolet light emitting diodes on Al coated Si (001) substrate Wu YP, Wang YJ, Sun K, Mi ZT
70 - 76	X-ray diffraction on stacking faults in 3C-SiC epitaxial microcrystals grown on patterned Si(001) wafers Meduna M, Kreiliger T, Mauceri M, Puglisi M, Mancarella F, La Via F, Crippa D, Miglio L, von Kanel H
77 - 86	Physical properties of Ga-Fe-N system relevant for crystallization of GaN - Initial studies Sadovyi B, Sadovyi P, Petrusha I, Dziecielewski I, Porowski S, Turkevich V, Nikolenko A, Tsykaniuk B, Strelchuk V, Grzegory I
87 - 92	Molecular beam epitaxy and characterization of Al0.6Ga0.4N epilayers Laleyan DA, Liu XH, Pandey A, Shin WJ, Reid ET, Mashooq K, Soltani M, Mi ZT
93 - 97	MOVPE grown GaInAsP/GaInAsP SCH-MQW laser diode on directly-bonded InP/Si substrate Sugiyama H, Uchida K, Han X, Periyanayagam GK, Aikawa M, Hayasaka N, Shimomura K
98 - 102	Growth and characterization of nitrogen-phosphorus hybrid passivated gate oxide film on N-type 4H-SiC epilayer Jia YF, Lv HL, Tang XY, Han C, Song QW, Zhang YM, Zhang YM, Dimitrijev S, Han JS
103 - 108	Epitaxial lateral overgrowth of GaN on nano-cavity patterned sapphire substrates Lee D, Lee S, Kim G, Kim J, Jang J, Oh J, Moon D, Park Y, Yoon E
109 - 112	A correlation study of substrate and epitaxial wafer with 4H-N type silicon carbide Zhao LX, Wu HW
113 - 117	Homoepitaxy of Ge on ozone-treated Ge (100) substrate by ultra-high vacuum chemical vapor deposition Wang JQ, Shen LM, Lin GY, Wang JY, Xu JF, Chen SY, Xiang G, Li C
118 - 123	Compensation effects of high oxygen levels in semipolar AlGaN electron blocking layers and their mitigation via growth optimization Becerra DL, Cohen DA, Mehari S, DenBaars SP, Nakamura S
124 - 133	Kinetics of plaster hydration and structure of gypsum: Experiments and kinetic Monte Carlo simulations with added gypsum seeds Morgado G, Masurel L, Rhodes Z, Lespiat R, Retot H, Lemarchand A
134 - 138	Design evolution of MOVPE reactors for improved productivity: Adaptation to nitrides and feedback to classical III-V Matsumoto K, Ubukata A, Piao GX, Yano Y, Tabuchi T, Koseki S, Sodabanlu H, Watanabe K, Nakano Y, Sugiyama M
139 - 142	Understanding and controlling Ga contamination in InAlN barrier layers Mrad M, Charles M, Mazel Y, Nolot E, Kanyandekwe J, Veillerot M, Ferret P, Feuillet G
143 - 145	Effect of growth rate on morphology evolution of 4H-SiC thick homoepitaxial layers Niu YX, Tang XY, Wu PF, Kong LY, Li Y, Xia JH, Tian HL, Tian L, Tian LX, Zhang WT, Jia RX, Yang F, Wu JM, Pan Y, Zhang YM
146 - 153	A kinetic study of crystallization process of imatinib mesylate with polymorphic transformation phenomenon Lin MX, Wu YY, Rohani S
154 - 156	In-situ measurement of CO gas concentration in a Czochralski furnace of silicon crystals Miyamura Y, Harada H, Liu X, Nakano S, Nishizawa S, Kakimoto K
157 - 162	Dependence of optimum V/III ratio on substrate orientation, and influence of buffer layer on MOVPE grown InSb/GaSb quantum dots Ahia CC, Tile N, Botha JR
163 - 167	Molecular beam epitaxy growth of Mn4-xNixN thin films on MgO(001) substrates and their magnetic properties Komori T, Anzai A, Gushi T, Toko K, Suemasu T
168 - 174	Synthesis of high purity ammonium alum crystallized from solutions containing impurities You SW, Guo T, Liu PF, Mao X, Zhang YF, Zhang Y
175 - 179	The influence of growth temperature on 4H-SiC epilayers grown on different off-angle (0001) Si-face substrates Yan GG, Liu XF, Shen ZW, Zhao WS, Wang L, Cui YX, Li JT, Zhang F, Sun GS, Zeng YP
180 - 188	Study of indium and antimony incorporation into SnS2 single crystals Khimani AJ, Chaki SH, Deshpande MP, Tailor JP
189 - 195	Hydrothermal synthesis of aluminum-doped zincophosphate large single crystal with different morphology Shi WT, Sun DL, Chen JQ, Sun L, Chu SW, Xi Z, Zeng YJ, Xu XT, Ruan SC
196 - 199	Effects of 6H-SiC substrate polarity on the morphology and microstructure of AlN films by HVPE with varied V/III ratio Chen JJ, Su XJ, Huang J, Niu MT, Xu K
200 - 204	Influence of the growth conditions of LT-AlN on quality of HT-AlN growth on Si (111) by metalorganic chemical vapor deposition Chernykh MY, Ezubchenko IS, Mayboroda IO, Zanaveskin ML
205 - 208	How to obtain metal-polar untwinned high-quality (10-13) GaN on m-plane sapphire Hu N, Dinh DV, Pristovsek M, Honda Y, Amano H
209 - 212	Growth of PrCo2 single crystals with a Boron Nitride crucible Liu Y, Lin QS, Pathak AK, Paudyal D, Lograsso TA
213 - 219	The impact of sulfite ions on barium sulfate crystallization Jones F, Ogden MI, Radomirovic T
220 - 225	Buried defects induced by plasma assisted molecular beam epitaxy of AlN and GaN on Silicon Cordier Y, Comyn R, Tottereau O, Frayssinet E, Portail M, Nemoz M
226 - 231	Selective-area growth of magnetic MnAs nanodisks on Si (111) substrates using multiple types of dielectric masks Horiguchi R, Hara S, Iida M, Morita K
232 - 240	Secondary nucleation and growth kinetics of aluminum hydroxide crystallization from potassium aluminate solution Xue J, Liu CL, Luo MJ, Lin MX, Jiang YF, Li P, Yu JG, Rohani S
241 - 245	Magnetization characterization of MnAs nanoclusters at close range in bended MnAs/InAs heterojunction nanowires Kodaira R, Horiguchi R, Hara S
246 - 250	Influence of GaN buffer layer under InGaN/GaN MQWs on luminescent properties Dominec F, Hospodkova A, Hubacek T, Zikova M, Pangrac J, Kuldova K, Vetushka A, Hulicius E
251 - 254	Determination of the phase relation of a LixLa(1-x)/3NbO3 system by the slow cooling floating zone method Tanaka I, Yoshihara R, Nakazawa C, Nagao M, Watauchi S
255 - 259	Highly tin doped GaAs at low growth temperatures using tetraethyl tin by metal organic vapor phase epitaxy Elleuch O, Lekhal K, Guan YX, Kuech TF
260 - 269	The effect of crystal-solvent interaction on crystal growth and morphology Li JW, Zhang SH, Gou RJ, Han G, Chen MH
270 - 282	The role of higher coformer stoichiometry ratio in pharmaceutical cocrystals for improving their solid-state properties: The cocrystals of progesterone and 4-hydroxybenzoic acid Samipillai M, Rohani S
283 - 287	Homoepitaxial growth of multiple 4H-SiC wafers assembled in a simple holder via conventional chemical vapor deposition Liu XF, Yan GG, Shen ZW, Wen ZX, Chen J, He YW, Zhao WS, Wang L, Guan M, Zhang F, Sun GS, Zeng YP
288 - 294	Effect of buffer layer structure on the structural properties of GaAs epitaxial layers grown on GaP substrates Imaizumi M, Hirotani M, Soga T, Umeno M
295 - 298	Influence of quartz on silicon incorporation in HVPE grown AlN Fleischmann S, Richter E, Mogilatenko A, Weyers M, Trankle G
299 - 306	The influence of travelling magnetic field on phosphorus distribution in n-type multi-crystalline silicon Buchovska I, Dropka N, Kayser S, Kiessling FM
307 - 309	Improved crystal quality of semipolar AlN by employing a thermal annealing technique with MOVPE Jo M, Itokazu Y, Kuwaba S, Hirayama H
310 - 315	Strong suppression of In desorption from InGaN QW by improved technology of upper InGaN/GaN QW interface Hubacek T, Hospodkova A, Oswald J, Kuldova K, Pangrac J, Zikova M, Hajek F, Dominec F, Florini N, Komninou P, Ledoux G, Dujardin C
316 - 320	Characteristics of aluminum nitride films on hexagonal boron nitride buffer layers using various growth methods through metal organic chemical vapor deposition Han M, Ryu BD, Ko KB, Jo CH, Lim CH, Cuong TV, Han N, Hong CH
321 - 326	Growth and fluorescence characteristics of Er:LuAG laser crystals Quan JL, Yang X, Long SW, Yang MM, Ma DC, Huang JQ, Guo YW, Zhu YZ, Wang B
327 - 331	Morphology of diamond single crystals grown in the Fe-Co-Mg-C system Kovalenko TV, Lysakovskyi VV, Kvasnytsya VM, Ivakhnenko SO, Suprun OM, Burchenia AV
332 - 337	Growth and characterization of Cs2LiLaCl6:Ce single crystals Zhu HB, Zhang P, Pan SK, Li HY, Jiang Y, Zhang JY, Zhang Z, Ren GH, Pan JG, Chen HB
338 - 343	Understanding Al incorporation into 4H-SiC during epitaxy Ferro G, Chaussende D, Tsavdaris N
344 - 351	Continuous crystallization of alpha-form L-glutamic acid in an MSMPR-Tubular crystallizer system Gao ZG, Wu YY, Gong JB, Wang JK, Rohani S
352 - 356	MOVPE van der Waals epitaxial growth of AlGaN/AlGaN multiple quantum well structures with deep UV emission on large scale 2D h-BN buffered sapphire substrates Sundaram S, Li X, Alam S, Ayari T, Halfaya Y, Patriarche G, Voss PL, Salvestrini JP, Ougazzaden A
357 - 361	Advantage of heteroepitaxial GaSb thin-film buffer and GaSb dot nucleation layer for GaSb/AlGaSb multiple quantum well structure grown on Si(100) substrate by molecular beam epitaxy Machida R, Akahane K, Watanabe I, Hara S, Fujikawa S, Kasamatsu A, Fujishiro HI
362 - 369	Crystallization of the polymer induced liquid mineral precursor in the constraint nanopores Li YL, Zhu JH, Cui MF, Wang J, Zha JJ
370 - 378	Initial stages of the epitaxial growth of AlN on GaN (111)-(2 x 2) surface: Ab-initio studies Moreno JC, Camacho-Garcia JH, Ponce-Perez R, Sanchez-Ochoa F, De la Cruz MTR, Cocoletzi GH
379 - 383	Epitaxial growth of undoped and Li-doped NiO thin films on alpha-Al2O3 substrates by mist chemical vapor deposition Ikenoue T, Inoue J, Miyake M, Hirato T
384 - 388	Atomic step-flow epitaxy of low defect InGaAs islands on Si(111) by micro-channel selective area MOVPE Fu YF, Otake N, Tachino Y, Watanabe T, Sugiyama M
389 - 394	Structural characteristics of m-plane AlN substrates and homoepitaxial films Graziano MB, Bryan I, Bryan Z, Kirste R, Tweedie J, Collazo R, Sitar Z
395 - 401	Study on the growth kinetics of Al2O3 columnar crystal in Al2O3 matrix composite ceramics prepared by microwave sintering Lu C, Ai YL, Yu QL, Chen WH, He W, Zhang JJ, Min XX
402 - 405	Assessing epitaxial regrowth material quality on a micro-transfer printed GaAs substrate Schmieder KJ, Lumb MP, Bennett MF, Haughn CR, Mack S, Yakes MK, Maximenko SI, Walters RJ
406 - 412	Laser-diode-heated floating-zone crystal growth of ErVO3 Telang P, Maljuk A, Rout D, Hu RW, Skoulatos M, Karmakar K, Seiro S, Roessli B, Stuhr U, Buchner B, Cheong SW, Singh S
413 - 420	Isomorphous substitutions in sillenite-family single-crystal Bi-24(M2-xMnx4+) O-40 solid solutions (M = Al3+, Fe3+, Ge4+, Ti4+, Cr4+, V5+) Kuz'micheva GM, Mel'nikova TI, Kaurova IA, Zubavichus YV, Nikolaychik VI
421 - 424	First-principle study of ammonia decomposition and nitrogen incorporation on the GaN surface in metal organic vapor phase epitaxy Bui KM, Iwata JI, Kangawa Y, Shiraishi K, Shigeta Y, Oshiyama A
425 - 436	Post-solidification effects in directionally solidified ternary eutectic Al-Ag2Al-Al2Cu Steinmetz P, Gadkari S, Genau A
437 - 441	Fabrication of submicron active-region-buried GaN hexagonal frustum structures by selective area growth for directional micro-LEDs Kumagai N, Takahashi T, Yamada H, Cong GW, Wang XL, Shimizu M
442 - 452	Development of high power SiC devices for rail traction power systems Liu GY, Wu YB, Li KJ, Wang YG, Li CZ
453 - 458	Uniformly valid asymptotic solutions of rod eutectic growth in directional solidification for liquid-solid interface slopes of small order Li XM, Chen XK, Xu F
459 - 459	Selective crystal growth of polymorphs and crystal-to-crystal thermal phase transition of non-peripherally alkyl-substituted phthalocyanine and tetrabenzotriazaporphyrin (vol 468, pg 804, 2017) Ohmori M, Nakano C, Fujii A, Shimizu Y, Ozaki M