In this study, AlN films on Si(1 1 1) using LT-AlN nucleation layer with various conditions at TMAl preflow were grown and investigated. It was shown that the main factor influencing the quality of AlN films is the degree of the substrate coating by aluminium at preflow. The qualitative model of AlN growth using the LT-AlN nucleation layer for three different coverage by Al (high, optimal and low) was suggested. For the film grown under optimal conditions, the rocking curve FWHM for the AlN (0 0 0 2) reflection was 0.59 degrees. The demonstrated possibility of the high-quality growth of AlN films below 1000 degrees C would be useful for high power electronics.