화학공학소재연구정보센터

Journal of Crystal Growth

Journal of Crystal Growth, Vol.463 Entire volume, number list
ISSN: 0022-0248 (Print) 

In this Issue (32 articles)

1 - 9 Investigation of dislocation cluster evolution during directional solidification of multicrystalline silicon
Oriwol D, Trempa M, Sylla L, Leipner HS
10 - 13 Growth of wurtzite InP/GaP core-shell nanowires by metal-organic molecular beam epitaxy
Halder NN, Kelrich A, Kauffmann Y, Cohen S, Ritter D
14 - 18 Determination of thermodynamic parameters for complexation of calcium and magnesium with chondroitin sulfate isomers using isothermal titration calorimetry: Implications for calcium kidney-stone research
Rodgers AL, Jackson GE
19 - 26 Epitaxial growth of mosaic diamond: Mapping of stress and defects in crystal junction with a confocal Raman spectroscopy
Shu GY, Dai B, Ralchenkq VG, Khomich AA, Ashkinazi EE, Bolshakov AP, Bokova-Sirosh SN, Liu K, Zhao JW, Han JC, Zhu JQ
27 - 32 Growth direction control of InAs nanowires on (001) Si substrate with SiO2/Si nano-trench
Chen WC, Chen LH, Lin YT, Lin HH
33 - 37 Crystal growth and spectroscopic properties of Cr3+-doped CaGdAlO4
Zhang Z, Huang YS, Zhang LZ, Sun SJ, Yuan FF, Lin ZB
38 - 45 Crystalline polarity of ZnO thin films deposited under dc external bias on various substrates
Ohsawa T, Tsunoda K, Dierre B, Zellhofer C, Grachev S, Montigaud H, Ishigaki T, Ohashi N
46 - 53 Capillary stability of vapor-liquid-solid crystallization processes and their comparison to Czochralski and Stepanov growth methods
Nebol'sin VA, Suyatin DB, Dunaev AI, Tatarenkov AF
54 - 58 Study of magnetoconductance effect in silicon nanowires formed by chemical etching in HF/AgNO3 solution: Effect of etching time
Chouaibi B, Radaoui M, Nafie N, Ben Fredj A, Romdhane S, Bouchriha H
59 - 66 Effects of a high magnetic field on the primary zinc-rich crystals in hypoeutectic Zn-Sn alloy
Li L, Ban CY, Shi XC, Zhang HT, Zuo YB, Zhu QF, Wang XJ, Zhang H, Cui JZ, Nagatimi H
67 - 71 Crystallinity control of SiC grown on Si by sputtering method
Watanabe R, Tsukamoto T, Kamisako K, Suda Y
72 - 78 Expanding pH screening space using multiple droplets with secondary buffers for protein crystallization
Zhang CY, Dong C, Lu XL, Wang B, He TY, Yang RZ, Lin HL, Yang XZ, Yin DC
79 - 85 Investigation of point defects and electrical properties of the In-doped CdMnTe grown by traveling heater method
Wen XL, Zhang JJ, Mao YF, Min JH, Liang XY, Huang J, Tang K, Wang LJ
86 - 89 Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(111)B
Islam ME, Akabori M
90 - 94 CeO2 nanocrystals and solid-phase heteroepitaxy of CeAlO3 interlayer on Al2O3(0001) substrate
Hattori T, Ozawa M
95 - 99 Mechanical grooving effect on the gettering efficiency of crystalline silicon based solar cells
Zarroug A, Ben Hamed Z, Derbali L, Ezzaouia H
100 - 109 A quantitative model with new scaling for silicon carbide particle engulfment during silicon crystal growth
Derby JJ, Tao YT, Reimann C, Friedrich J, Jauss T, Sorgenfrei T, Croll A
110 - 115 Density functional theory study of stable configurations of substitutional and interstitial C and Sn atoms in Si and Ge crystals
Koyama H, Sueoka K
116 - 122 Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy
Patra SK, Tran N, Vines L, Kolevatov I, Monakhov E, Fimland BO
123 - 127 LPE growth and optical characteristics of GaAs1-xSbx epilayer
Wang Y, Hu SH, Zhou W, Sun Y, Zhang B, Wang C, Dai N
128 - 133 Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H-2 and N-2 carrier gas
Margetis J, Mosleh A, Al-Kabi S, Ghetmiri SA, Du W, Dou W, Benamara M, Li B, Mortazavi M, Naseem HA, Yu SQ, Tolle J
134 - 138 Growth and interface engineering in thin-film Ba0.6Sr0.4TiO3/SrMoO3 heterostructures
Radetiriac A, Ziegler J, Vafaee M, Alff L, Komissinskiy P
139 - 144 Length distributions of nanowires: Effects of surface diffusion versus nucleation delay
Dubrovskii VG
145 - 150 Feeding of liquid silicon for high performance multicrystalline silicon with increased ingot height and homogenized resistivity
Krenckel P, Riepe S, Schindler F, Strauch T
151 - 155 MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8%
Nattermann L, Beyer A, Ludewig P, Hepp T, Sterzer E, Volz K
156 - 161 Molecular Beam Epitaxy of lithium niobium oxide multifunctional materials
Tellekamp MB, Shank JC, Doolittle WA
162 - 167 Kinetic modeling on batch-cooling crystallization of zinc lactate: The influence of malic acid
Zhang XY, Qian G, Zhou XG
168 - 175 The role of hydrogen bonding propensity in tuning the morphology of crystals obtained from imidazolium based ionic liquids
Karthika S, Radhakrishnan TK, Kalaichelvi P
176 - 186 Comprehensive numerical simulation analysis of flow and mass transfer by tuning inlet conditions in solution circulating technique focused to grow quality KDP crystal
Zhang XL, Cheng M, Yang S, Huang Y
187 - 193 Graphene-like monolayer low-buckled honeycomb germanium film
He YZ, Luo HB, Li H, Sui YW, Wei FX, Meng QK, Yang WM, Qi JQ
194 - 200 Atomic concentration effect on thermal properties during solidification of Pt-Rh alloy: A molecular dynamics simulation
Yildiz AK, Celik FA
201 - 210 Sodium chloride precipitation reaction coefficient from crystallization experiment in a microfluidic device
Naillon A, Joseph P, Prat M