1 - 9 |
Investigation of dislocation cluster evolution during directional solidification of multicrystalline silicon Oriwol D, Trempa M, Sylla L, Leipner HS |
10 - 13 |
Growth of wurtzite InP/GaP core-shell nanowires by metal-organic molecular beam epitaxy Halder NN, Kelrich A, Kauffmann Y, Cohen S, Ritter D |
14 - 18 |
Determination of thermodynamic parameters for complexation of calcium and magnesium with chondroitin sulfate isomers using isothermal titration calorimetry: Implications for calcium kidney-stone research Rodgers AL, Jackson GE |
19 - 26 |
Epitaxial growth of mosaic diamond: Mapping of stress and defects in crystal junction with a confocal Raman spectroscopy Shu GY, Dai B, Ralchenkq VG, Khomich AA, Ashkinazi EE, Bolshakov AP, Bokova-Sirosh SN, Liu K, Zhao JW, Han JC, Zhu JQ |
27 - 32 |
Growth direction control of InAs nanowires on (001) Si substrate with SiO2/Si nano-trench Chen WC, Chen LH, Lin YT, Lin HH |
33 - 37 |
Crystal growth and spectroscopic properties of Cr3+-doped CaGdAlO4 Zhang Z, Huang YS, Zhang LZ, Sun SJ, Yuan FF, Lin ZB |
38 - 45 |
Crystalline polarity of ZnO thin films deposited under dc external bias on various substrates Ohsawa T, Tsunoda K, Dierre B, Zellhofer C, Grachev S, Montigaud H, Ishigaki T, Ohashi N |
46 - 53 |
Capillary stability of vapor-liquid-solid crystallization processes and their comparison to Czochralski and Stepanov growth methods Nebol'sin VA, Suyatin DB, Dunaev AI, Tatarenkov AF |
54 - 58 |
Study of magnetoconductance effect in silicon nanowires formed by chemical etching in HF/AgNO3 solution: Effect of etching time Chouaibi B, Radaoui M, Nafie N, Ben Fredj A, Romdhane S, Bouchriha H |
59 - 66 |
Effects of a high magnetic field on the primary zinc-rich crystals in hypoeutectic Zn-Sn alloy Li L, Ban CY, Shi XC, Zhang HT, Zuo YB, Zhu QF, Wang XJ, Zhang H, Cui JZ, Nagatimi H |
67 - 71 |
Crystallinity control of SiC grown on Si by sputtering method Watanabe R, Tsukamoto T, Kamisako K, Suda Y |
72 - 78 |
Expanding pH screening space using multiple droplets with secondary buffers for protein crystallization Zhang CY, Dong C, Lu XL, Wang B, He TY, Yang RZ, Lin HL, Yang XZ, Yin DC |
79 - 85 |
Investigation of point defects and electrical properties of the In-doped CdMnTe grown by traveling heater method Wen XL, Zhang JJ, Mao YF, Min JH, Liang XY, Huang J, Tang K, Wang LJ |
86 - 89 |
Growth and magnetic properties of MnAs/InAs hybrid structure on GaAs(111)B Islam ME, Akabori M |
90 - 94 |
CeO2 nanocrystals and solid-phase heteroepitaxy of CeAlO3 interlayer on Al2O3(0001) substrate Hattori T, Ozawa M |
95 - 99 |
Mechanical grooving effect on the gettering efficiency of crystalline silicon based solar cells Zarroug A, Ben Hamed Z, Derbali L, Ezzaouia H |
100 - 109 |
A quantitative model with new scaling for silicon carbide particle engulfment during silicon crystal growth Derby JJ, Tao YT, Reimann C, Friedrich J, Jauss T, Sorgenfrei T, Croll A |
110 - 115 |
Density functional theory study of stable configurations of substitutional and interstitial C and Sn atoms in Si and Ge crystals Koyama H, Sueoka K |
116 - 122 |
Dopant incorporation in Al0.9Ga0.1As0.06Sb0.94 grown by molecular beam epitaxy Patra SK, Tran N, Vines L, Kolevatov I, Monakhov E, Fimland BO |
123 - 127 |
LPE growth and optical characteristics of GaAs1-xSbx epilayer Wang Y, Hu SH, Zhou W, Sun Y, Zhang B, Wang C, Dai N |
128 - 133 |
Study of low-defect and strain-relaxed GeSn growth via reduced pressure CVD in H-2 and N-2 carrier gas Margetis J, Mosleh A, Al-Kabi S, Ghetmiri SA, Du W, Dou W, Benamara M, Li B, Mortazavi M, Naseem HA, Yu SQ, Tolle J |
134 - 138 |
Growth and interface engineering in thin-film Ba0.6Sr0.4TiO3/SrMoO3 heterostructures Radetiriac A, Ziegler J, Vafaee M, Alff L, Komissinskiy P |
139 - 144 |
Length distributions of nanowires: Effects of surface diffusion versus nucleation delay Dubrovskii VG |
145 - 150 |
Feeding of liquid silicon for high performance multicrystalline silicon with increased ingot height and homogenized resistivity Krenckel P, Riepe S, Schindler F, Strauch T |
151 - 155 |
MOVPE growth of Ga(PBi) on GaP and GaP on Si with Bi fractions up to 8% Nattermann L, Beyer A, Ludewig P, Hepp T, Sterzer E, Volz K |
156 - 161 |
Molecular Beam Epitaxy of lithium niobium oxide multifunctional materials Tellekamp MB, Shank JC, Doolittle WA |
162 - 167 |
Kinetic modeling on batch-cooling crystallization of zinc lactate: The influence of malic acid Zhang XY, Qian G, Zhou XG |
168 - 175 |
The role of hydrogen bonding propensity in tuning the morphology of crystals obtained from imidazolium based ionic liquids Karthika S, Radhakrishnan TK, Kalaichelvi P |
176 - 186 |
Comprehensive numerical simulation analysis of flow and mass transfer by tuning inlet conditions in solution circulating technique focused to grow quality KDP crystal Zhang XL, Cheng M, Yang S, Huang Y |
187 - 193 |
Graphene-like monolayer low-buckled honeycomb germanium film He YZ, Luo HB, Li H, Sui YW, Wei FX, Meng QK, Yang WM, Qi JQ |
194 - 200 |
Atomic concentration effect on thermal properties during solidification of Pt-Rh alloy: A molecular dynamics simulation Yildiz AK, Celik FA |
201 - 210 |
Sodium chloride precipitation reaction coefficient from crystallization experiment in a microfluidic device Naillon A, Joseph P, Prat M |