We carried out molecular beam epitaxial (MBE) growth of MnAs/InAs hybrid structure on GaAs(111)B for spin field effect transistor (spin-FET) applications. We observed good alignment of hexagonal MnAs and cubic InAs epitaxial layers with GaAs(111)B by X-ray diffraction (XRD) measurement. We observed smooth surface morphology of MnAs/InAs by atomic force microscopy (AFM), and also observed maze like magnetic structure by magnetic force microscopy (MFM). We observed easy and hard magnetizations in-plane and out-of-plane directions similar to MnAs/GaAs(1 1 1)B using superconducting quantum interference device (SQUID) magnetometer. We believe that the MnAs/InAs hybrid structure on GaAs(111)B can be a base structure for spin-FETs. (C) 2017 Elsevier B.V. All rights reserved.