1 - 4 |
Effect of nanohole size on selective area growth of InAs nanowire arrays on Si substrates Wang XY, Yang WY, Wang BJ, Ji XH, Xu SY, Wang W, Chen Q, Yang T |
5 - 12 |
Effect of additives on size and shape of lithium carbonate crystals Taborga P, Brito I, Graber TA |
13 - 15 |
Behavior of volatile dopants (P, Sb) in Czochralski silicon growth Porrini M, Scala R, Voronkov VV |
16 - 22 |
Investigation of bonded hydrogen defects in nanocrystalline diamond films grown with nitrogen/methane/hydrogen plasma at high power conditions Tang CJ, Hou HH, Fernandes AJS, Jiang XF, Pinto JL, Ye H |
23 - 26 |
Solution growth of silicon carbide using unary chromium solvent Miyasaka R, Kawanishi S, Narumi T, Sasaki H, Yoshikawa T, Maeda M |
27 - 36 |
Formation of graphene/SiC/AIN multilayers synthesized by pulsed laser deposition on Si(110) substrates Narita S, Meguro K, Takami T, Enta Y, Nakazawa H |
37 - 41 |
Fe-doped semi-insulating GaN with solid Fe source grown on (110) Si substrates by NH3 molecular beam epitaxy Noh YK, Lee ST, Kim MD, Oh JE |
42 - 47 |
Growth aspects, structural, optical, thermal and mechanical properties of benzotriazole pyridine-2-carboxylic acid single crystal Thirunavukkarsu A, Sujatha T, Umarani PR, Mohideen MN, Silambarasan A, Kumar RM |
48 - 58 |
Numerical investigation of an experimental Kyropoulos process to grow silicon ingots for photovoltaic application Nouri A, Delannoy Y, Chichignoud G, Lhomond L, Helifa B, Lefkeir IK, Zaidat K |
59 - 66 |
Modification of solid-state property of sulfasalazine by using the supercritical antisolvent process Wu WY, Su CS |
67 - 77 |
On the light intensity transmitted through water and aqueous supersaturated ammonium dihydrogen phosphate solutions containing different antisolvents Sangwal K |
78 - 84 |
Epitaxial growth of magnetic ZnCuO thin films by pulsed laser deposition Kim DH, Kim TC, Lee SH, Jung HK, Jeong J, Han SH |
85 - 93 |
Growth of O-18 isotopically enriched ZnO nanorods by two novel VPT methods Gray C, Trefflich L, Roder R, Ronning C, Henry MO, McGlynn E |
94 - 97 |
Transition metal doping of GaSe implemented with low temperature liquid phase growth Lei N, Sato Y, Tanabe T, Maeda K, Oyama Y |
98 - 104 |
Precipitation of Cu and Ni in n- and p-type Czochralski-grown silicon characterized by photoluminescence imaging Sun C, Nguyen HT, Rougieux FE, Macdonald D |
105 - 111 |
Studies on the growth aspects, structural and third-order nonlinear optical properties of Piperidinium 3-carboxy-4-hydroxy benzenesulfonate single crystal Kalaiyarasi S, Zahid IM, Devi SR, Kumar RM |
112 - 116 |
Single crystal growth of Sn0.97Ag0.03Se by a novel horizontal Bridgman method and its thermoelectric properties Jin M, Shao HZ, Hu HY, Li DB, Xu JT, Liu GQ, Shen H, Xu JY, Jiang HC, Jiang J |
117 - 125 |
The evaluation of linear and planar defects in W-doped ZnO nanopowders Soleimanian V, Chenari HM |
126 - 133 |
Effects of supersaturation on pore shape in solid Wei PS, Hsiao SY |
134 - 138 |
Growth of uniform CaGe2 films by alternating layer molecular beam epitaxy Xu JS, Katoch J, Ahmed AS, Pinchuk IV, Young JR, Johnston-Halperin E, Pelz J, Kawakami RK |