In this work, we investigate the influence of some growth parameters such as high microwave power ranging from 3.0 to 4.0 kW and N-2 additive on the incorporation of bonded hydrogen defects in nanocrystalline diamond (NCD) films grown through a small amount of pure N-2 addition into conventional 4% CH4/H-2 plasma using a 5 kW microwave plasma CVD system. Incorporation form and content of hydrogen point defects in the NCD films produced with pure N-2 addition was analyzed by employing Fourier-transform infrared (FTIR) spectroscopy for the first time. A large amount of hydrogen related defects was detected in all the produced NCD films with N-2 additive ranging from 29 to 87 gm thick with grain size from 47 nm to 31 nm. Furthermore, a specific new H related sharp absorption peak appears in all the NCD films grown with pure N-2/CH4/H-2 plasma at high powers and becomes stronger at powers higher than 3.0 kW and is even stronger than the 2920 cm(-1) peak, which is commonly found in CVD diamond films. Based on these experimental findings, the role of high power and pure nitrogen addition on the growth of NCD films including hydrogen defect formation is analyzed and discussed.