1 - 4 |
Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates Li HJ, Liu CB, Liu GP, Wei HY, Jiao CM, Wang JX, Zhang H, Jin DD, Feng YX, Yang SY, Wang LS, Zhu QS, Wang ZG |
5 - 11 |
Growth of calcite seeds in a magnetized environment Tai CY, Chang MC, Liu CC, Wang SSS |
12 - 17 |
Multilayer structures of silicon-suboxide embedded in single crystal silicon Pohl C, Raab N, Mitterer M, Tarakina N, Breuer U, Brunner K |
18 - 22 |
Density limits of high temperature and multiple local droplet etching on AlAs Kerbst J, Heyn C, Slobodskyy T, Hansen W |
23 - 29 |
Growth of crack-free ZnGeP2 large single crystals for high-power mid-infrared OPO applications Lei ZT, Zhu CQ, Xu C, Yao BQ, Yang CH |
30 - 38 |
Growth, optical, thermal, dielectric and microhardness characterizations of melaminium bis (trifluoroacetate) trihydrate single crystal Sangeetha V, Gayathri K, Krishnan P, Sivakumar N, Kanagathara N, Anbalagan G |
39 - 46 |
Growth and characterization of terbium fumarate heptahydrate single crystals Want B, Shah MD |
47 - 54 |
Effect of solidification parameters on the microstructures of superalloy CMSX-6 formed during the downward directional solidification process Wang F, Ma D, Zhang J, Liu L, Hong J, Bogner S, Buhrig-Polaczek A |
55 - 59 |
Epitaxial growth of manganese oxide films on MgAl2O4 (001) substrates and the possible mechanism Ren LZ, Wu SX, Zhou WQ, Li SW |
60 - 67 |
Large eddy simulation of industrial Czochralski Si crystal growth under transverse magnetic field Chen X, Zhan JM, Li YS, Cen XR |
68 - 73 |
On the solution of solute diffusion during eutectic growth Wang HF, Liu F, Herlach DM |
74 - 77 |
Crystalline boron nanowires grown on the diamond surface Bai H, Dai D, Zhu CX, Chen GX, Jiang N |
78 - 82 |
Growth, morphology, spectral and thermal studies of gel grown diclofenac acid crystals Ramachandran E, Ramukutty S |
83 - 91 |
Role of high microwave power on growth and microstructure of thick nanocrystalline diamond films: A comparison with large grain polycrystalline diamond films Tang CJ, Fernandes AJS, Girao AV, Pereira S, Shi FN, Soares MR, Costa F, Neves AJ, Pinto JL |
92 - 98 |
Influence of film thickness on the morphological and electrical properties of epitaxial TiC films deposited by reactive magnetron sputtering on MgO substrates Zoita NC, Braic V, Danila M, Vlaicu AM, Logofatu C, Grigorescu CEA, Braic M |
99 - 102 |
Evaluation of CdTexSe1-x crystals grown from a Te-rich solution Roy UN, Bolotnikov AE, Camarda GS, Cui Y, Hossain A, Lee K, Yang G, James RB |
103 - 107 |
Tapering and crystal structure of indium phosphide nanowires grown by selective area vapor liquid solid epitaxy Greenberg Y, Kelrich A, Calahorra Y, Cohen S, Ritter D |
112 - 119 |
Formation process of Si3N4 particles on surface of Si ingots grown using silica crucibles with Si3N4 coating by noncontact crucible method Nakajima K, Morishita K, Murai R, Usami N |
120 - 133 |
Governing factors for the formation of 4H or 6H-SiC polytype during SiC crystal growth: An atomistic computational approach Kang KH, Eun T, Jun MC, Lee BJ |
134 - 138 |
Bulk growth of uniform and near stoichiometric cadmium telluride Swain SK, Cui YL, Datta A, Bhaladhare S, Rao MR, Burger A, Lynn KG |
139 - 143 |
Growth and physical characterization of AgGa1-x,InxSe2 (x=0.5) single crystals grown by modified vertical Bridgman method Vijayakumar P, Babu GA, Ramasamy P |