Journal of Crystal Growth

Journal of Crystal Growth, Vol.387 Entire volume, number list

ISSN: 0022-0248 (Print)

In this Issue (22 articles)

1 - 5	Reduction of threading dislocations in N-polar GaN using a pseudomorphicaly grown graded-Al-fraction AlGaN interlayer Li L, Yang LA, Cao RT, Xu SR, Zhou XW, Xue JS
6 - 9	Preparation and characterization of Bi-doped LuFeO3 thin films grown on LaNiO3 substrate Zhu LP, Deng HM, Liu J, Sun L, Yang PX, Jiang AQ, Chu JH
10 - 15	Development of grain structures of multi-crystalline silicon from randomly orientated seeds in directional solidification Wong YT, Hsu C, Lan CW
16 - 22	Site-specific comparisons of V-defects and threading dislocations in InGaN/GaN multi-quantum-wells grown on SiC and GaN substrates Liu F, Huang L, Kamaladasa R, Picard YN, Preble EA, Paskova T, Evans KR, Davis RF, Porter LM
23 - 28	Pseudomorphic thick InGaN growth with a grading interlayer by metal organic chemical vapor deposition for InGaN/GaN p-i-n solar cells Bae SY, Song YH, Jeon SR, Kim DM, Jho YD, Lee DS
29 - 35	Polymorphic change from vaterite to aragonite under influence of sulfate: The "morning star" habit Wagterveld RM, Yu M, Miedema H, Witkamp GJ
36 - 40	Electrical effect of introducing elemental sodium into the Bridgman melt of CuInSe2+x crystals Myers HF, Champness CH, Shih I
41 - 47	Spectroscopic features of nonlinear AgGaSe2 crystals Yelisseyev A, Krinitsin P, Isaenko L
48 - 51	Threading edge dislocation arrays in epitaxial GaN: Formation, model and thermodynamics Chen ZM, Zheng ZY, Chen YD, Wu HL, Tong CS, Wang G, Wu ZS, Jiang H
52 - 56	Effect of periodic Si-delta-doping on the evolution of yellow luminescence and stress in n-type GaN epilayers Zheng ZY, Chen ZM, Wu HL, Chen YD, Huang SJ, Fan BF, Xian YL, Wu ZS, Wang G, Jiang H
57 - 65	Growth kinetics evaluation of hydrothermally synthesized beta-FeOOH nanorods Chowdhury M, Fester V, Kale G
66 - 72	Thermal, spectral and laser characteristics of Nd doped La0.05Lu0.95VO4 crystal Xu HH, Han S, Yu HH, Wang ZP, Wang JY, Zhang HJ, Tang DY
73 - 80	A design of crucible susceptor for the seeds preservation during a seeded directional solidification process Ding CL, Huang ML, Zhong GX, Ming L, Huang XM
81 - 85	Growth and characterization of epitaxial Ba(Co,Zn)(1/3)Nb2/3O3 thin films Li Y, Kopas C, Huang M, Bunish K, Newmann N
86 - 90	High-quality a-plane (11-20) GaN growth using double-lens structure on r-plane sapphire Min D, Yoo G, Moon S, Kwak J, Kim H, Nam O
91 - 95	Characteristics of GaN-based LEDs using Ga-doped or In-doped ZnO transparent conductive layers grown by atomic layer deposition Yen KY, Chiu CH, Hsiao CY, Li CW, Chou CH, Lo KY, Chen TP, Lin CH, Lin TY, Gong JR
96 - 100	Structural and optical properties of Ga2O3 films on sapphire substrates by pulsed laser deposition Zhang FB, Saito K, Tanaka T, Nishio M, Guo QX
101 - 105	Hydride vapor phase epitaxy of high quality {10(1)over-bar(3)over-bar} semipolar GaN on m-plane sapphire coated with self-assembled SiO2 nanospheres Yang JK, Wei TB, Huo ZQ, Hu Q, Zhang YH, Duan RF, Wang JX
106 - 110	Influences of periodic Si delta-doping on the characteristics of n-GaN grown on Si (111) substrate Xiang P, Yang YB, Liu MG, Chen WJ, Han XB, Lin Y, Hu GW, Hu GH, Luo H, Jiang JL, Lin JL, Wu ZS, Liu Y, Zhang BJ
111 - 116	Vapor phase epitaxy of monocrystal tungsten coatings Lv YW, Yu XD, Wang FC, Tan CW, Yang QF, Zheng JP, Wang ZD, Cai HN
117 - 123	Crystal growth of Cu(In,Ga)Se-2 film by RTP annealing of the stacked elemental layers formed by E-beam evaporation Li ZH, Cho ES, Kwon SJ
124 - 124	Growth temperature dependence of strain relaxation during InGaAs/GaAs(001) heteroepitaxy (vol 323, pg 13, 2011) Sasaki T, Suzuki H, Sai A, Takahasi M, Fujikawa S, Kamiya I, Ohshita Y, Yamaguchi M