Ga2O3 films were deposited on (0001) sapphire substrates by means of pulsed laser deposition (PLD). The influences of substrate temperature on crystal quality, surface morphology, and transmittance have been systematically investigated by means of X-ray diffraction, atomic force microscope and spectrophotometer The results show that all of the films have high transmittance and smooth surface. The (-201) oriented beta-Ga2O3 can be obtained at substrate temperature of 500 degrees C, which is lower than the growth temperature by other method such as molecular beam epitaxy, indicating PLD is a promising growth technology for growing high quality beta-Ga2O3 films at low temperature. (C) 2013 Elsevier B.V. All rights reserved.