1 - 8 |
Correlation between the residual stress and the density of threading dislocations in GaN layers grown by hydride vapor phase epitaxy Barchuk M, Roder C, Shashev Y, Lukin G, Motylenko M, Kortus J, Patzold O, Rafaja D |
9 - 15 |
Structural investigation of the seeding process for physical vapor transport growth of 4H-SiC single crystals Ohtani N, Ohshige C, Katsuno M, Fujimoto T, Sato S, Tsuge H, Ohashi W, Yano T, Matsuhata H, Kitabatake M |
16 - 21 |
Growth, characterization, and magnetic properties of a Li(Mn,Ni)PO4 single crystal Wang K, Maljuk A, Blum CGF, Kolb T, Jahne C, Neef C, Grafe HJ, Giebeler L, Wadepohl H, Meyer HP, Wurmehl S, Klingeler R |
22 - 26 |
KMC simulation of growth and equilibration of V-shaped patterned crystal surface via step motion Esen M, Ozdemir M |
27 - 31 |
CdTe thin films grown by pulsed laser deposition using powder as target: Effect of substrate temperature de Moure-Flores F, Quinones-Galvan JG, Guillen-Cervantes A, Arias-Ceron JS, Hernandez-Hernandez A, Santoyo-Salazar J, Santos-Cruz J, Mayen-Hernandez SA, Olvera MD, Mendoza-Alvarez JG, Melendez-Lira M, Contreras-Puente G |
32 - 37 |
Growth and characterization of Cu (II) doped negatively soluble lithium sulfate monohydrate crystals Boopathi K, Ramasamy P, Bhagavannarayana G |
38 - 42 |
Ultrathin low temperature Si0.75Ge0.25/Si buffer layer for the growth of high quality Ge epilayer on Si (100) by RPCVD Chen D, Wei X, Xue ZY, Bian JT, Wang G, Zhang M, Di ZF, Liu S |
43 - 46 |
Growth of CdTexSe1-x from a Te-rich solution for applications in radiation detection Roy UN, Bolotnikov AE, Camarda GS, Cui Y, Hossain A, Lee K, Marshall M, Yang G, James RB |
47 - 51 |
Growth and characterization of wurtzite GaP nanowires with control over axial and radial growth by use of HCl in-situ etching Berg A, Lehmann S, Vainorius N, Gustafsson A, Pistol ME, Wallenberg LR, Samuelson L, Borgstrom MT |
52 - 56 |
Seed-assisted growth of high-quality multi-crystalline silicon in directional solidification Zhu DD, Ming L, Huang ML, Zhang ZY, Huang XM |
57 - 61 |
Structure and electrical properties of AlN films prepared on PZT layers with different orientations Meng XQ, Yang CT, Yang JC |
62 - 68 |
Growth, characterization, optical and vibrational properties of Sm3+ doped Cd0.8Zn0.2S semiconductor compounds Yellaiah G, Hadasa K, Nagabhushanam M |
69 - 75 |
Lamellar coupled growth in the neopentylglycol-(D)camphor eutectic Witusiewicz VT, Sturz L, Hecht U, Rex S |
76 - 79 |
Polarity control of AlN layers grown on sapphire substrates by oxygen doping during AlN nucleation Kinoshita T, Yanagi H, Inoue S |
80 - 87 |
Facile synthesis and characterization of nanostructured flower-like copper molybdate by the co-precipitation method Shahri Z, Salavati-Niasari M, Mir N, Kianpour G |
88 - 93 |
The impact of substrate miscut on the microstructure and photoluminescence efficiency of (0001) InGaN quantum wells grown by a two-temperature method Massabuau FCP, Tartan CC, Traynier R, Blenkhorn WE, Kappers MJ, Dawson P, Humphreys CJ, Oliver RA |
94 - 99 |
Structure modeling and growing AgClxBr1-x, Ag1-xTlxBr1-xIx, and Ag1-xTlxClyIzBr1-y-z crystals for infrared fiber optics Korsakov A, Zhukova L, Korsakova E, Zharikov E |
100 - 106 |
Effects of nitrogen precursor on the Au-assisted vapor-liquid-solid growth of GaAs(N) nanostructures Suzuki H, Sakai K, Haraguchi T, Yamauchi T, Hijii M, Maeda K, Ikari T |
107 - 112 |
Nanoimprint lithography based selective area growth of indium phosphide nanopillar arrays on non-single-crystal templates Norris KJ, Zhang J, Fryauf DM, Gibson GA, Barcelo SJ, Kobayashi NP |
113 - 118 |
The search of homogeneity of LiNbO3 crystals grown of charge with different genesis Palatnikov MN, Birukova IV, Masloboeva SM, Makarova OV, Manukovskaya DV, Sidorov NV |
119 - 127 |
The influence of aliphatic amines, diamines, and amino acids on the polymorph of calcium carbonate precipitated by the introduction of carbon dioxide gas into calcium hydroxide aqueous suspensions Chuajiw W, Takatori K, Igarashi T, Hara H, Fukushima Y |
128 - 134 |
Effects of temperature on the polymorphism of alpha,omega-dioctylterthiophene in thin films Lercher C, Resel R, Balandier JY, Niebel C, Geerts YH, Sferrazza M, Gbabode G |
135 - 138 |
Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates Goff LE, Powell REL, Kent AJ, Foxon CT, Novikov SV, Webster R, Cherns D |
139 - 145 |
Anomalous strain behavior on EuTe self-assembled islands Heredia E, Diaz B, Malachias A, Rappl PHO, Iikawa F, Brasil MJSP, Motisuke P |
146 - 153 |
Enhanced VGF-GaAs growth using pulsed unidirectional TMF Dropka N, Frank-Rotsch C |
154 - 161 |
Crystal growth of calcium carbonate in silk fibroin/sodium alginate hydrogel Ming JF, Zuo BQ |
162 - 167 |
Effect of nitrogen impurity on the dislocation structure of large HPHT synthetic diamond crystals Khokhryakov AF, Palyanov YN, Kupriyanov IN, Borzdov YM, Sokol AG |
168 - 174 |
Plasma assisted molecular beam epitaxy of GaN with growth retes > 2.6 mu m/h McSkimming BM, Wu F, Huault T, Chaix C, Speck JS |
175 - 178 |
Investigation of the wet-etching mechanism of Ga-polar AlGaN/GaN micro-pillars Kang JJ, Li Z, Liu ZQ, Li HJ, Zhao YB, Tian YD, Ma P, Yi XY, Wang GH |
179 - 182 |
Spatially-controlled protein crystallization in microfluidic chambers Longuet C, Yamada A, Chen Y, Baigl D, Fattaccioli J |
183 - 189 |
Comparison of different grading approaches in metamorphic buffers grown on a GaAs substrate Saha S, Cassidy DT, Thompson DA |
190 - 193 |
Epitaxial growth of wide-band-gap ZnGa2O4 films by mist chemical vapor deposition Oshima T, Niwa M, Mukai A, Nagami T, Suyama T, Ohtomo A |
194 - 198 |
Effects of growth rate variations on carrier lifetime and interface structure in InAs/GaSb superlattices Murray LM, Lokovic KS, Olson BV, Yildirim A, Boggess TF, Prineas JP |
199 - 203 |
Influence of pulling rate on multicrystalline silicon ingots' properties Autruffe A, Sondena R, Vines L, Arnberg L, Di Sabatino M |
204 - 207 |
Growth and characterization of Cu2ZnSn(SxSe1-x)(4) alloys grown by the melting method Nagaoka A, Yoshino K, Taniguchi H, Taniyama T, Kakimoto K, Miyake H |
208 - 214 |
Inhibition of calcium carbonate precipitation by aqueous extract of Paronychia argentea Belarbi Z, Gamby J, Makhloufi L, Sotta B, Tribollet B |
215 - 219 |
Dislocation-density-based modeling of the plastic behavior of 4H-SiC single crystals using the Alexander-Haasen model Gao B, Kakimoto K |
220 - 225 |
Interface layer control and optimization of InAs/GaSb type-II superlattices grown by molecular beam epitaxy Xu ZC, Chen JX, Wang FF, Zhou Y, Jin C, He L |
226 - 234 |
Advanced chemical model for analysis of Cz and DS Si-crystal growth Vorob'ev AN, Sid'ko AP, Kalaev VV |