The impact of the miscut of a (0001) c-plane substrate on the structural and optical properties of InGaN/GaN quantum wells grown by metal-organic vapour phase epitaxy using a two-temperature method has been investigated. The two-temperature growth method involves exposure of the uncapped InGaN quantum well to a temperature ramp in an ammonia atmosphere before growth of the GaN barrier at a higher temperature. The resulting quantum well, consists of interlinking InGaN strips containing gaps which may impede carrier diffusion to dislocations. By increasing the substrate misorientation from 0 to 0.5 degrees we show that the density of InGaN strips increases while the strip width reduces. Our data show that the PL efficiency increases with miscut and that the peak efficiency occurs at a lower excitation power density. (C) 2013 Elsevier B.V. All rights reserved.