1 - 6 |
LiNb1-xTaxO3 films prepared by thermal plasma spray CVD Yamamoto H, Kulinich SA, Terashima K |
7 - 12 |
Rapid hard tooling by plasma spraying for injection molding and sheet metal forming Zhang HO, Wang GL, Luo YH, Nakaga T |
13 - 19 |
Numerical simulation of coating growth and pore formation in rapid plasma spray tooling Chen YX, Wang GL, Zhang HO |
20 - 25 |
Surface modification of titanium oxide in pulse-modulated induction thermal plasma Ishigaki T, Haneda H, Okada N, Ito S |
26 - 30 |
B-C-N nanotubes prepared by a plasma evaporation method Moriyoshi Y, Shimizu Y, Watanabe T |
31 - 36 |
Synthesis of fullerenes from carbon powder by using high power induction thermal plasma Wang C, Imahori T, Tanaka Y, Sakuta T, Takikawa H, Matsuo H |
37 - 43 |
Synthesis of new ceramics from powder mixtures using thermal plasma processing Fukumasa O |
44 - 50 |
Preparation of ultrafine particles of silicon base intermetallic compound by arc plasma method Watanabe T, Itoh H, Ishii Y |
51 - 58 |
Microwave plasma enhanced CVD of aluminum oxide films: OES diagnostics and influence of the RF bias Tristant P, Ding Z, Vinh QBT, Hidalgo H, Jauberteau JL, Desmaison J, Dong C |
59 - 63 |
Quantitative modeling of reactive sputtering process for MgO thin film deposition Matsuda Y, Otomo K, Fujiyama H |
64 - 69 |
Characterization of multilayer films of Ti-Al-O-C-N system prepared by pulsed d.c. plasma-enhanced chemical vapor deposition Kawata K, Sugimura H, Takai O |
70 - 75 |
Preparation of strontium titanate thin firms by mirror-confinement-type electron cyclotron resonance plasma sputtering Baba S, Numata K, Saito H, Kumagai M, Ueno T, Kyoh B, Miyake S |
76 - 82 |
Large-area uniform dust-free plasma CVD Fujiyama H, Maemura Y, Yamaguchi T |
83 - 87 |
Anomalous behavior of electron temperature in silane glow discharge plasmas Takai M, Nishimoto T, Kondo M, Matsuda A |
88 - 92 |
Reduction of carbon impurities in silicon oxide films prepared by rf plasma-enhanced CVD Teshima K, Inoue Y, Sugimura H, Takai O |
93 - 97 |
Dissociation process of CH4/H-2 gas mixture during EACVD Dong LF, Chen JY, Li XW, Zhang LS, Han L, Fu GS |
98 - 103 |
CVD of hard DLC films in a radio frequency inductively coupled plasma source Yu SJ, Ding ZF, Xu J, Zhang JL, Ma TC |
104 - 106 |
Adhesion improvement of diamond films on cemented carbides with copper implant layer Ma ZB, Wang JH, Wu QC, Wang CX |
107 - 112 |
Characterization of CNx films prepared by twinned ECR plasma source enhanced DC magnetron sputtering Xu J, Deng XL, Zhang JL, Lu WQ, Ma TC |
113 - 118 |
A study on the formation and characteristics of the Si-O-C-H composite thin films with low dielectric constant for advanced semiconductor devices Yang CS, Oh KS, Ryu JY, Kim DC, Shou-Yong J, Choi CK, Lee HJ, Um SH, Chang HY |
119 - 122 |
Localized material growth by a dielectric barrier discharge Jiang N, Qian SF, Wang L, Zhang HX |
123 - 129 |
Investigation of deposition rate and structure of pulse DC plasma polymers Zhang J, van Ooij W, France P, Datta S, Radomyselskiy A, Xie HQ |
130 - 133 |
Synthesis of multi-walled carbon nanotubes by microwave plasma-enhanced chemical vapor deposition Wang XH, Hu Z, Wu Q, Chen X, Chen Y |
134 - 138 |
Surface reaction processes in C4F8 and C5F8 plasmas for selective etching of SiO2 over photo-resist Motomura H, Imai S, Tachibana K |
139 - 144 |
Dynamic nitrogen and titanium plasma ion implantation/deposition at different bias voltages Tian XB, Wang LP, Zhan QY, Chu PK |
145 - 148 |
Steady-state direct-current plasma immersion ion implantation using an electron cyclotron resonance plasma source Zeng XC, Chu PK, Chen QC, Tong HH |
149 - 153 |
Pulsed high energy density plasma processing silicon surface Liu B, Liu CZ, Cheng DJ, He R, Yang SZ |
154 - 158 |
Oxidative degradation of acridine orange induced by plasma with contact glow discharge electrolysis Gao JZ, Hu ZG, Wang XY, Hou JG, Lu XQ, Kang JW |
159 - 164 |
Stabilization of chlorofluorocarbons (CFCs) by plasma copolymerization with hydrocarbon monomers Tsuji O, Minaguchi T, Nakano H |
165 - 169 |
A novel pulsed plasma for chemical conversion Yao SL, Suzuki E, Nakayama A |
170 - 174 |
Study on mechanism of C-H radicals' recombination into acetylene in the process of coal pyrolysis in hydrogen plasma Li MD, Fan YS, Dai B, Deng WW, Liu XL |
175 - 180 |
Three-dimensional simulation of a plasma jet with transverse particle and carrier gas injection Li HP, Chen X |
181 - 185 |
Modeling of the supersonic argon plasma jet at low gas pressure environment Han P, Chen X |
186 - 191 |
Numerical analysis and experiments on transferred plasma torches for finding appropriate operating conditions and electrode configuration for a waste melting process Hur M, Hwang TH, Ju WT, Lee CM, Hong SH |
192 - 196 |
Anode mode in cathodic arc deposition apparatus with various cathodes and ambient gases Miyano R, Saito T, Kimura K, IKeda M, Takikawa H, Sakakibara T |
197 - 201 |
Optical emission patterns and microwave field distributions in a cylindrical microwave plasma source Fang F, Liang RQ, Ou QR, Sui YF |
202 - 207 |
Production of low electron temperature ECR plasma for plasma processing Itagaki N, Ueda Y, Ishii N, Kawai Y |
208 - 211 |
Ion and neutral temperatures in an electron cyclotron resonance plasma Yonesu A, Shinohara S, Yamashiro Y, Kawai Y |
212 - 216 |
Ion-burst method for positive and negative ion species measurements Yoshimura S, Ichiki R, Shindo M, Kawai Y |
217 - 221 |
Characteristics of VHF excited hydrogen plasmas using a ladder-shaped electrode Takeuchi Y, Kawasaki I, Mashima H, Murata M, Kawai Y |
222 - 227 |
Estimate of the negative ion density in reactive gas plasmas Shindo M, Ichiki R, Yoshimura S, Kawai Y |
228 - 233 |
Low-frequency modes in two-dimensional Debye-Yukawa plasma crystals Wang XG, Liu Y, Bhattacharjee A, Hu SH |
234 - 236 |
Multiple microscale plasma CVD apparatuses on a substrate Ito T, Terashima K |
237 - 242 |
Dielectric barrier discharge - properties and applications Xu XJ |
243 - 247 |
Study on formation process of surface plasma Zhang GQ, Ge YJ, Yang WJ, Zhao ZF |
VII - VII |
Proceedings of the 5th Asia-Pacific Conference on Plasma Science & Technology and the 13th Symposium on Plasma Science for Materials, Dalian, China, 10-13 September, 2000 - Preface Tachibana K, Watanabe T, Yang XF |