1 - 4 |
Excitation energy transfer in Langmuir-Blodgett films of 5-(4-N-octadecylpyridyl)-10,15,20-tri-p-tolylporphyrin on gold-evaporated glass substrates studied by time-resolved fluorescence spectroscopy Zhang ZJ, Verma AL, Tamai N, Nakashima K, Yoneyama M, Iriyama K, Ozaki Y |
5 - 8 |
Preparation of the nucleoside-containing nanolayered film by the layer-by-layer deposition technique Shimazaki Y, Mitsuishi M, Ito S, Yamamoto M, Inaki Y |
9 - 12 |
Sputter deposition of gallium nitride films using a GaAs target Elkashef N, Srinivasa RS, Major S, Sabharwal SC, Muthe KP |
13 - 15 |
Characterization of SiGe base layer in Si/SiGe heterojunction bipolar transistor layer structure Zhang JS, Jin XJ, Tsien PH, Lo TC |
16 - 19 |
Amorphous lithium cobalt and nickel oxides thin films : preparation and characterization by RBS and PIGE Benqlilou-Moudden H, Blondiaux G, Vinatier P, Levasseur A |
20 - 24 |
Atomic transport in Cu/Ge and Co/Ge systems during ion-beam mixing Dhar S, Kulkarni VN |
25 - 28 |
The growth of TiO2 thin films on mixed self-assembly monolayers from solution Xiao ZD, Su LY, Gu N, Lu ZH, Wei Y |
29 - 34 |
Amorphous hydrogenated carbon nitride films deposited via an expanding thermal plasma at high growth rates de Graaf A, Dinescu G, Longueville JL, van de Sanden MCM, Schram DC, Dekempeneer EHA, van Ijzendoorn LJ |
35 - 40 |
A chemical vapour deposition route to MoO3-Bi2O3 thin films Barreca D, Rizzi GA, Tondello E |
41 - 49 |
The adsorption of monolayer coatings on iron nanoparticles : Mossbauer spectroscopy and XANES results Kataby G, Koltypin Y, Rothe J, Hormes J, Felner I, Cao X, Gedanken A |
50 - 59 |
Residual stress determination in PECVD TiN coatings by X-ray diffraction : a parametric study Thomsen NB, Horsewell A, Mogensen KS, Eskildsen SS, Mathiasen C, Bottiger J |
60 - 64 |
Growth temperature effect on the heteroepitaxy of InSb films on a Si(001) substrate covered with Ge islands Mori M, Nizawa Y, Nishi Y, Tambo T, Tatsuyama C |
65 - 70 |
Oxy-acetylene flame chemical vapour deposition of diamond film II : the influence of deposition parameters on diamond composition Garcia I, Vazquez AJ |
71 - 76 |
Moisture-resistant properties of SiNx films prepared by PECVD Lin H, Xu LQ, Chen X, Wang XH, Sheng M, Stubhan F, Merkel KH, Wilde J |
77 - 81 |
Monte Carlo simulations of sputter deposition and step coverage of thin films Coronell DG, Egan EW, Hamilton G, Jain A, Venkatraman R, Weitzman B |
82 - 87 |
Guided-mode resonance absorption in partly oxidized thin silver films Libardi H, Grieneisen HP |
88 - 94 |
Formation and characterization of multiphase film properties of (Ti-Cr)N formed by cathodic arc deposition Nainaparampil JJ, Zabinski JS, Korenyi-Both A |
95 - 102 |
Adhesive metal films obtained by thermionic vacuum arc (TVA) deposition Ehrich H, Schuhmann J, Musa G, Popescu A, Mustata I |
103 - 107 |
Structure changes in a-C : H films in inductive CH4/Ar plasma deposition Teii K |
108 - 113 |
Growth characteristics and electrical resistivity of chemical vapor-deposited tungsten film Chang IS, Hon MH |
114 - 125 |
Monitoring laser-induced microstructural changes of thin film hydrogenated amorphous carbon (a-C : H) using Raman spectroscopy Lamberton RW, Morley SM, Maguire PD, McLaughlin JA |
126 - 133 |
Optical losses of multilayer stacks synthesized with silicon oxynitride by rf magnetron sputtering Pinard L, Mackowski JM |
134 - 136 |
Influence of thermal and electronic modifications of the GaAs bandgap on bistable luminescent light emitted from a thin CdS film Ullrich B |
137 - 141 |
Effect of temperature and substrate on the growth behaviors of chemical vapor deposited Al films with dimethylethylamine alane source Jang TW, Moon W, Baek JT, Ahn BT |
142 - 149 |
A comparative study on the nucleation and growth of ECR-PECVD PLZT ((Pb,La)(Zr,Ti)O-3) thin films on Pt/SiO2/Si substrates and on Pt/Ti/SiO2/Si substrates Shin JS, Lee WJ |
150 - 156 |
The effect of post-deposition transverse current injection on amorphous indium oxide film conductivity Parkansky N, Alterkop B, Rosenbaum R, Boxman RL, Goldsmith S |
157 - 164 |
Grazing incidence X-ray diffraction analysis of alkali fluoride thin films for optical devices Cremona M, Mauricio MHP, Fehlberg LV, Nunes RA, do Carmo LCS, de Avillez RR, Caride AO |
165 - 169 |
Effect of photocrystallization on the photoconductivity of a-Se80Te20 Dixit M, Dwivedi SK, Kumar A |
170 - 175 |
AC electrical properties of vacuum deposited Au-SiOx-Au sandwich structures after electroforming Lopez MG, Gould RD |
176 - 184 |
Electrical, optical and photovoltaic effect in pyronine G (Y) based thin film sandwich devices Sharma GD, Gupta SK, Roy MS |
185 - 190 |
Investigation of angular selective optical properties of silver titanium oxide cermet thin films Jahan F, Smith GB |
191 - 195 |
Ion beam-assisted deposition of MgF2 and YbF3 films Kennedy M, Ristau D, Niederwald HS |
196 - 202 |
Electrical and optical properties of fluorine-doped ZnO thin films prepared by spray pyrolysis Sanchez-Juarez A, Tiburcio-Silver A, Ortiz A, Zironi EP, Rickards J |
203 - 206 |
Iron-iron oxide composite thin films prepared by chemical vapor deposition from iron pentacarbonyl Maruyama T, Shinyashiki Y |
207 - 212 |
Microstructure of yttrium stabilized ZrO2 crystals with CeO2 and SrTiO3 intermediate layers Roddatis VV, Vasiliev AL, Stepantsov EA, Kiselev NA, Olsson E, Ivanov ZG, Claeson T |
213 - 218 |
Uniaxially oriented polyamide films in-plane prepared by vacuum deposition polymerization methods assisted by oblique ion irradiation Sakata J |
219 - 223 |
XPS and AFM study of chemical mechanical polishing of silicon nitride Yang GR, Zhao YP, Hu YZ, Chow TP, Gutmann RJ |
224 - 227 |
New sol-gel oxygen sensor based on luminescence cyclometallated platinum complexes Ma YG, Cheung TC, Che CM, Shen JC |
228 - 234 |
Processing of Nb DC SQUIDs for RF amplification Cyrille MC, Chicault R, Villegier JC |
235 - 239 |
Influence of peripheral electron-withdrawing substituents on the conductivity of zinc phthalocyanine in the presence of gases. Part 2 : oxidizing gases Germain JP, Pauly A, Maleysson C, Blanc JP, Schollhorn B |
240 - 244 |
Frequency-resolved photoconductivity in a-SiGe : H Kaplan R |
245 - 250 |
Defect distribution and evolution in He+ implanted Si studied by variable-energy positron beam Zhang M, Lin CL, Weng HM, Scholz R, Gosele U |
251 - 255 |
Optical properties of AlN thin films correlated with sputtering conditions Gadenne M, Plon J, Gadenne P |
256 - 263 |
Photocurrent increment in organic solar cell with mixed solid of merocyanine and zinc porphyrin Takahashi K, Higashi M, Tsuda Y, Yamaguchi T, Komura T, Ito S, Murata K |
264 - 271 |
Stresses in Al/TiW/Si(100) contacts during thermal cycling Berger S, Raslin O |
272 - 277 |
Sexithiophene thin films epitaxially oriented on polytetrafluoroethylene substrates: structure and morphology (vol 303, pg 207, 1997) Wittmann JC, Straupe C, Meyer S, Lotz B, Lang P, Horowitz G, Garnier F |
278 - 286 |
Simulation of Berkovich nanoindentation experiments on thin films using finite element method (vol 312, pg 240, 1998) Lichinchi M, Lenardi C, Haupt J, Vitali R |
287 - 294 |
Non-catalytic displacement plating (NCDP) of photosensitive semiconducting thin films (vol 312, pg 139, 1998) Kumar M, Sharan MK, Sharon M |