Al films were deposited by pyrolysis of dimethylethylamine alane on Si, SiO2 and TiN substrates without a carrier gas. When Al was deposited on Si and SiO2 below 160 degrees C, the incubation time increased from 1 to 11 min as the substrate temperature decreased. But no incubation time was observed on TiN substrate. The nucleation activation energies (E-an) of Al on Si and SiO2 were 0.71 and 0.79 eV, respectively. The growth rate increased as the substrate temperature increased to 160 degrees C and then it decreased with further increase in the substrate temperature. The maximum growth rate of 600 nm/min was observed on TiN substrate. Below 160 degrees C, the growth activation energies (E-act) of Al on Si, SiO2, and TiN were 0.23, 0.34, and 0.1 eV, respectively. The difference in the growth rate and activation energy might be related to substrate conductivity. The texture of Al film was affected by TIN orientation and Al thickness. When the Si substrate was biased at + 100 V, the degree of Al(1 1 1) texture was greatly improved. Al film with low resistivity was denser than that with high resistivity.