1 - 6 |
Transport of vacuum arc plasma through an off-plane double bend filtering duct Shi X, Tay BK, Tan HS, Liu E, Shi J, Cheah LK, Jin X |
7 - 11 |
The high-density microwave plasma for high rate deposition of microcrystalline silicon Shirai H, Sakuma Y, Ueyama H |
12 - 17 |
Low temperature epitaxial growth of ZnO layer by plasma-assisted epitaxy Yamauchi S, Handa H, Nagayama A, Hariu T |
18 - 22 |
Structural and bonding properties of carbon nitride films prepared by dc magnetron sputtering Jin YS, Shibata T, Matsuda Y, Fujiyama H |
23 - 28 |
Effects of the power of electron shower and substrate bias on the synthesis of cementite films Li SJ, Yumoto H, Shimotomai M, Ishihara M |
29 - 33 |
Deposition process of metal oxide thin films by means of plasma CVD with beta-diketonates as precursors Itoh K, Matsumoto O |
34 - 37 |
Molecular dynamics study of cluster deposition in thermal plasma flash evaporation Yamaguchi N, Sasajima Y, Terashima K, Yoshida T |
38 - 41 |
Application of ITO films to photocatalysis Yumoto H, Inoue T, Li SJ, Sako T, Nishiyama K |
42 - 44 |
SiC film deposition by DC magnetron sputtering Gou L, Qi CS, Ran JG, Zheng CQ |
45 - 49 |
Formation and characterization of the fluorocarbonated-SiO2 films by O-2/FTES-helicon plasma chemical vapor deposition Oh KS, Kang MS, Lee KM, Kim DS, Choi CK, Yun SM, Chang HY, Kim KH |
50 - 54 |
Role of adsorbed species on the deposit in the diamond deposition with brominated benzenes as carbon source Itoh K, Ohmachi S, Aida H, Matsumoto O |
55 - 59 |
Diluent gas effect on diamond CVD growth Mitsuda Y, Kobayashi K |
60 - 66 |
Structural characterization of diamond thin films prepared by plasma jet Park DW, Yun JS |
67 - 70 |
Preparation of DLC gradient biomaterials by means of plasma source ion implant-ion beam enhanced deposition Yin GF, Luo JM, Zheng CQ, Tong HH, Huo YF, Mu LL |
71 - 74 |
Photoinduced electro-motive-force of sulfur doped plasma CVD methane film Matsushita M, Bin Harun MZ, Morita S |
75 - 79 |
Gas-phase diagnosis and high-rate growth of stable a-Si : H Takagi T, Hayashi R, Ganguly G, Kondo M, Matsuda A |
80 - 84 |
Particle formation and a-Si : H film deposition in narrow-gap RF plasma CVD Maemura Y, Fujiyama H, Takagi T, Hayashi R, Futako W, Kondo M, Matsuda A |
85 - 89 |
Plasma-induced free radicals of polycrystalline carbohydrates as spin probe for plasma diagnosis of plasma treatment Kuzuya M, Ito K, Kondo S, Yamauchi Y |
90 - 93 |
In situ observation of behavior of organosilicon molecules in low-temperature plasma enhanced CVD Inoue Y, Sugimura H, Takai O |
94 - 98 |
Temperature measurement of polymer substrates during plasma irradiation Yamamoto K, Harada T, Tomikawa N, Uyama H, Yang SC, Fujiyama H |
99 - 103 |
Plasma polymerization of cobalt tetraphenylporphyrin and the functionalities of the thin films produced Nakamura K, Watanabe M, Zhou M, Fujishima M, Tsuchiya M, Handa T, Ishii S, Noguchi H, Kashiwagi K, Yoshida Y |
104 - 107 |
Computer controlled plasma source ion nitriding Deng XL, Wang YP, Xu ZF, Wang DZ, Lu WQ, Zhang JL, Yang FB, Yan JY, Ma TC |
108 - 112 |
Plasma-nitrided AISI-316 stainless steel examined by scanning electron microscopy and secondary ion mass spectrometry Baldwin MJ, Kumar S, Priest JM, Fewell MP, Prince KE, Short KT |
113 - 118 |
Low pressure r.f. nitriding of austenitic stainless steel in an industrial-style heat-treatment furnace Priest JM, Baldwin MJ, Fewell MP, Haydon SC, Collins GA, Short KT, Tendys J |
119 - 123 |
Surface treatment of steel using non-equilibrium plasma at atmospheric pressure Kiyokawa K, Itou A, Matsuoka H, Tomimatsu M, Sugiyama K |
124 - 129 |
Characteristics of self bias voltage and poly-Si etching in pulsed helicon wave plasma Kim JH, Kang CJ, Ahn TH, Moon JT |
130 - 133 |
Parameters measurement of ECR C4F8/Ar plasma Shindo M, Hiejima S, Ueda Y, Kawakami S, Ishii N, Kawai Y |
134 - 139 |
Diagnoses of inductively coupled SF6 and N-2 plasmas at atmospheric pressure Paul KC, Hatazawa S, Takahashi M, Cliteur GJ, Sakuta T |
140 - 145 |
Heat and momentum transfer between a thermal plasma and suspended particles for different Knudsen numbers Xi C |
146 - 150 |
Scanning tunneling microscopy operating under a plasma environment Terashima K, Taniguchi Y, Yamaguchi N, Takamura Y, Yoshida T |
151 - 155 |
Time resolved spectrum of the fuse arc plasma Saqib MA, Stokes AD |
156 - 160 |
Compositional modification of boron carbide induced by induction plasma treatment Tanaka T, Fan XB, Ishigaki T, Soucy G |
161 - 166 |
Reduction and separation of silica-alumina mixture with argon-hydrogen thermal plasmas Watanabe T, Soyama M, Kanzawa A, Takeuchi A, Koike M |
167 - 171 |
Two-dimensional spatial distributions of sputtered particles produced in a planar magnetron discharge of indium-tin-oxide target Matsuda Y, Muta M, Fujiyama H |
172 - 177 |
Electronic properties of MOS capacitor exposed to Inductively coupled hydrogen plasma Ikeda A, Sadou T, Nagashima H, Kouno K, Yoshikawa N, Tshukamoto K, Kuroki Y |
178 - 181 |
Recent results of multi-cathode electron beam plasma source Kim TY, Noh SJ, Jing JK, Lee KO, Chung KH |
182 - 184 |
An analytic model for energy distributions of neutrals striking a planar cathode at low pressure glow discharges Wang DZ, Deng XL, Ma TC |
VII - VII |
Papers presented at the joint symposium: The 11th Symposium on Plasma Science for Materials and the 4th Asia-Pacific Conference on Plasma Science & Technology, Coogee, Sydney, NSW, Australia, 27-29 July 1998 - Preface Yoshida T, Boswell RW, Koinuma H, Lowke J |