The effects of electrode distance are discussed in a diode type plasma enhanced chemical vapor deposition (PECVD) system as an important external control parameter for the preparation of hydrogenated amorphous silicon (a-Si:H) using an RF silane (SiH4) plasma. The electron temperature is increased by shortening the electrode distance due to a plasma self-organization mechanisms, leading to an increase in the growth rate of a-Si:H films. Furthermore, shortening the distance between the heated electrodes (anode and/or cathode) gives rise to decrease in SiH4 density in the discharge space near the electrodes resulting in suppression of the particle formation. Through the control of particle formation by changing the electrode distance, the defect properties in the resulting films are successfully controlled.