Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.24, No.5 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (50 articles)

L23 - L25	Zinc tin oxide thin-film transistors via reactive sputtering using a metal target Hong D, Chiang HQ, Wager JF
2191 - 2197	Chemical analysis of deposits formed on the reactor walls during silicon and metal gate etching processes Le Gouil A, Pargon E, Cunge G, Joubert O, Pelissier B
2198 - 2201	Synthesis and optical properties of ZnO-ZnS core-shell nanotube arrays Liao HC, Kuo PC, Lin CC, Chen SY
2202 - 2204	Amber GaNP-based light-emitting diodes directly grown on GaP(100) substrates Odnoblyudov VA, Tu CW
2205 - 2208	Influence of oxygen content on electrical properties of NiO films grown by rf reactive sputtering for resistive random-access memory applications Park JW, Park JW, Jung K, Yang MK, Lee JK
2209 - 2213	Converging lithography by combination of electrostatic layer-by-layer self-assembly and 193 nm photolithography: Top-down meets bottom-up Hah JH, Mayya S, Hata M, Jang YK, Kim HW, Ryoo M, Woo SG, Cho HK, Moon JT
2214 - 2219	Study of metal gate deposition by magnetron sputtering Ye MQ, Liu ZD, Ding PJ, Hung S, Ahmed K
2220 - 2224	Templated germanium nanowire synthesis using oriented mesoporous organosilicate thin films Jagannathan H, Deal M, Nishi Y, Kim HC, Freer EM, Sundstrom L, Topuria T, Rice PM
2225 - 2229	Three-dimensional SU-8 structures by reversal UV imprint Hu W, Yang B, Peng C, Pang SW
2230 - 2235	Nanochemistry, nanostructure, and electrical properties of Ta2O5 film deposited by atomic layer deposition and plasma-enhanced atomic layer deposition Gu DF, Li J, Dey SK, De Waard H, Marcus S
2236 - 2245	Multiparameter characterization of cluster ion beams Nicolaescu D, Takaoka GH, Ishikawa J
2246 - 2249	Laser ablation of via holes in GaN and AlGaN/GaN high electron mobility transistor structures Anderson T, Ren F, Pearton SJ, Mastro MA, Holm RT, Henry RL, Eddy CR, Lee JY, Lee KY, Kim J
2250 - 2255	Thickness and Fourier transform infrared peak instability in silicon dioxide thin films deposited using electron-gun deposition Cornell T, Nightingale JR, Pathak S, Hornak LA, Korakakis D
2256 - 2261	Neutron irradiation effects in p-GaN Polyakov AY, Smirnov NB, Govorkov AV, Markov AV, Kolin NG, Merkurisov DI, Boiko VM, Shcherbatchev KD, Bublik VT, Voronova MI, Pearton SJ, Dabiran A, Osinsky AV
2262 - 2270	Etching characteristics of TiN used as hard mask in dielectric etch process Darnon M, Chevolleau T, Eon D, Vallier L, Torres J, Joubert O
2271 - 2275	Comparison of microcantilever Hg sensing behavior with thermal higher order modes for as-deposited sputtered and thermally evaporated Au films Kadam AR, Nordin GP, George MA
2276 - 2281	Atomic layer deposition of Ta-based thin films: Reactions of alkylamide precursor with various reactants Maeng WJ, Park SJ, Kim H
2282 - 2290	Prospect of cobalt-mix-tetraethoxysilane method on localized lateral growth of carbon nanotubes for both p- and n-type field effect transistors Chen BH, Lin HC, Huang TY, Wei JH, Hwang CL, Lo PY, Tsai MJ, Chao TS
2291 - 2294	Nanoscale structure fabrication of multiple AlGaSb/InGaSb quantum wells by reactive ion etching with chlorine-based gases toward photonic crystals Gozu S, Akahane K, Yamamoto N, Ueta A, Ohtani N, Tsuchiya M
2295 - 2301	Back-gated milliampere-class field emission device based on carbon nanosheets Tyler T, Shenderova O, Ray M, Dalton J, Wang J, Outlaw R, Zhu M, Zhao X, McGuire G, Holloway BC
2302 - 2305	AlGaN/GaN high electron mobility transistors on Si/SiO2/poly-SiC substrates Anderson TJ, Ren F, Voss L, Hlad M, Gila BP, Covert L, Lin J, Pearton SJ, Bove P, Lahreche H, Thuret J
2306 - 2311	Comparison of different methods to contact to nanowires Langford RM, Wang TX, Thornton M, Heidelberg A, Sheridan JG, Blau W, Leahy R
2312 - 2316	Characterization of in situ diffusion of silver in Ge-Te amorphous films for programmable metallization cell memory applications Lee SJ, Yoon SG, Choi KJ, Ryq SO, Yoon SM, Lee NY, Yu BG
2317 - 2321	Thermal stability study on nanoscale polysilicide resistors Chen YM, Wang YL, Hwang GJ, Juang Y, Lee WH
2322 - 2325	Texture development and grain boundary faceting in an excimer laser-crystallized silicon thin film Lee SB, Moon J, Chung CH, Kim YH, Lee JH, Choi DK
2326 - 2330	Swing effects in alternating phase shift mask lithography: Implications of low sigma illumination Singh N, Sun HQ, Foo WH, Mehta SS, Kumar R, Adeyeye AO, Suda H, Kubota T, Kimura Y, Kinoshita H
2331 - 2336	Substrate temperature effects on 193 nm photoresist deformation and self-aligned contact hole etching performances Kim MC, Bai KH, Kang CJ, Cho HK
2337 - 2349	Novel electron-beam-induced reaction of a sulfonium salt in the solid state Enomoto K, Moon S, Maekawa Y, Shirnoyama J, Goto K, Narita T, Yoshida M
2350 - 2355	Inductively coupled plasma etching of amorphous Al2O3 and TiO2 mask layers grown by atomic layer deposition Dekker J, Kolari K, Puurunen RL
2356 - 2359	Technique for thermal isolation of antenna-coupled infrared microbolometers Middleton CF, Boreman GD
2360 - 2371	Investigation of surface roughening of low-k films during etching using fluorocarbon plasma beams Yin YP, Rasgon S, Sawin HH
2372 - 2380	Modeling HfO2 atomic layer chemical vapor deposition on blanket wafer, via, and trench structures using HfCl4/H2O Stout PJ, Adams V, Ventzek PLG
2381 - 2387	Optimization of a Cl-2-H-2 inductively coupled plasma etching process adapted to nonthermalized InP wafers for the realization of deep ridge heterostructures Guilet S, Bouchoule S, Jany C, Corr CS, Chabert P
2388 - 2390	Low resistance, unannealed, Ohmic contacts to p-type In0.27Ga0.73Sb Champlain JG, Magno R, Boos JB
2391 - 2397	Plasma doping implant depth profile calculation based on ion energy distribution measurements Godet L, Fang Z, Radovanov S, Walther S, Arevalo E, Lallement F, Scheuer JT, Miller T, Lenoble D, Cartry G, Cardinaud C
2398 - 2404	Novel nanoscale thermal property imaging technique: The 2 omega method. I. Principle and the 2 omega signal measurement Roh HH, Lee JS, Kim DL, Park J, Kim K, Kwon O, Park SH, Choi YK, Majumdar A
2405 - 2411	Novel nanoscale thermal property imaging technique: The 2 omega method. II. Demonstration and comparison Roh HH, Lee JS, Kim DL, Park J, Kim K, Kwon O, Park SH, Choi YK, Majumdar A
2412 - 2416	Patchwork field emission properties of lanthanum monosulfide thin films Semet V, Cahay M, Binh VT, Fairchild S, Wu X, Lockwood DJ
2417 - 2420	Formation and process optimization of scanning resistive probe Shin H, Kim C, Lee B, Kim J, Park H, Min DK, Jung JW, Hong SB, Kim S
2423 - 2423	Papers from the 7th International Conference on Microelectronics and Interfaces - Preface Rogers BR
2424 - 2428	Surface roughness exacerbated performance degradation in silicon nanowire transistors Basu D, Gilbert MJ, Banerjee SK
2429 - 2431	Exciton determination of strain parameters in InSb/AlxIn1-xSb quantum wells Kasturiarachchi T, Brown F, Dai N, Khodaparast GA, Doezema RE, Goel N, Chung SJ, Santos MB
2432 - 2436	Atomistic modeling of dopant implantation, diffusion, and activation Pelaz L, Aboy M, Lopez R, Marques LA
2437 - 2441	Application of x-ray metrology in the characterization of metal gate thin films Hung PY, Alshareef H, Lafford T, Bowen DK, Majhi P, Diebold A
2442 - 2448	Mechanism of germanium plasma nitridation Sugawara T, Sreenivasan R, McIntyre PC
2449 - 2456	Physical and electrical properties of plasma nitrided germanium oxynitride Sugawara T, Sreenivasan R, McIntyre PC
2457 - 2459	Front and back side Auger electron spectroscopy depth profile analysis to verify an interfacial reaction at the HfN/SiO2 interface Gondran CFH, Johnson C
2460 - 2466	Back side exposure of variable size through silicon vias Rowbotham T, Patel J, Lam T, Abhulimen IU, Burkett S, Cai L, Schaper L
2467 - 2471	Copper in organic acid based cleaning solutions Pernel C, Farkas J, Louis D
2472 - 2476	Influence of crystallographic orientation on dry etch properties of TiN Dictus D, Shamiryan D, Paraschiv V, Boullart W, De Gendt S, Vanhaelemeersch S