Unannealed Pd/Pt/Au contacts to p-type In0.27Ga0.73Sb were fabricated and measured. Relatively high hole mobilities, with respect to similarly doped InP-lattice-matched materials, and associated low sheet resistances were measured for the p-type In0.27Ga0.73Sb material. The unannealed Pd/Pt/Au contacts were found to be Ohmic in nature; and for a hole density of 2.9 x 10(19) cm(-3) and a mobility of 160 cm(2)/V s, a specific contact, resistance of 7.6 x 10(-8) ohm cm(2) was measured.