Journal of Vacuum Science & Technology B

Journal of Vacuum Science & Technology B, Vol.26, No.1 Entire volume, number list

ISSN: 1071-1023 (Print)

In this Issue (85 articles)

1 - 5	Undercut structure fabricated by complementary-structure micropatterning technique for the passive-matrix display of organic light-emitting diodes Xing R, Xuan Y, Ma DG, Han YC
6 - 10	Fabrication and performance of nanoscale ultrasmooth programed defects for extreme ultraviolet lithography Olynick DL, Salmassi F, Liddle JA, Mirkarimi PB, Spiller E, Baker SL, Robinson J
11 - 22	Studies of fluorocarbon film deposition and its correlation with etched trench sidewall angle by employing a gap structure using C4F8/Ar and CF4/H-2 based capacitively coupled plasmas Ling L, Hua X, Zheng L, Oehrlein GS, Hudson EA, Jiang P
23 - 27	Mobility-diffusivity relationship for semiconductor nanowires Khan A, Mohammad SN
28 - 31	Double oxidation scheme for tunnel junction fabrication Holmqvist T, Meschke M, Pekola JP
32 - 35	Turn-on field distribution of field-emitting sites in carbon nanotube film: Study with luminescent image Liu WH, Zeng FG, Xin L, Zhu CC, He YN
36 - 40	Exposure latitude of deep-ultraviolet conformable contact photolithography Fucetola CP, Carter DJD, Goodberlet JG
41 - 46	Structural and electrical investigation of laser annealed (Pb,Sr)TiO3 thin films Wang JL, Lai YS, Liou SC, Chiou BS, Jan CK, Cheng HC
47 - 51	Enhanced local oxidation of silicon using a conducting atomic force microscope in water Hilton AM, Jacobson KW, Lynch BP, Simpson GJ
52 - 55	Optical properties of n-doped Ga1-xMnxN epitaxial layers grown by metal-organic chemical-vapor deposition in mid and far (5-50 mu m) IR range Weerasekara AB, Hu ZG, Dietz N, Perera AGU, Asghar A, Kane MH, Strassburg M, Ferguson IT
56 - 61	GaSb based midinfrared equilateral-triangle-resonator semiconductor lasers Yu SQ, Cao Y, Johnson SR, Zhang YH, Huang Y
62 - 66	Grayscale lithography by a polymer photomask doped with laser dye Korivi NS, Zhou YX, Jiang L
67 - 71	Improvement of the wiggling profile of spin-on carbon hard mask by H-2 plasma treatment Tadokoro M, Yonekura K, Yoshikawa K, Ono Y, Ishibashi T, Hanawa T, Fujiwara N, Matsunobe T, Matsuda K
72 - 75	Nonlocal reduced boron diffusivity in silicon below strained Si1-xGex surfaces Carroll MS, Suh YS, Levy R
76 - 79	Nanostructuring GaN using microsphere lithography Ng WN, Leung CH, Lai PT, Choi HW
80 - 83	Flare-variation compensation for 32 nm line and space pattern for device manufacturing on extreme-ultraviolet lithography Aoyama H, Iriki N, Tanaka T
84 - 88	Potential of phase-shifted optical proximity correction for 65 nm T-shaped pattern in high numerical aperture lithography Gao SB, Li YQ
89 - 95	Atomic diffusion and interface electronic structure at In0.49Ga0.51P/GaAs heterojunctions Smith PE, Lueck M, Ringel SA, Brillson LJ
96 - 101	Study of pretreatment prior to silicon-oxycarbide deposition on Cu interconnect Huang CC, Huang JL, Wang YL, Lo KY
L1 - L6	Recent advance in protection technology for extreme ultraviolet lithography masks under low-pressure condition Kim JH
L7 - L9	Boron nanobelts grown under intensive ion bombardment Li WT, Boswell R, Gerald JDF
102 - 105	Surface structure characterization of nanodiamond thin film for electronic field emission applications Xie FY, Xie WG, Chen J, Liu X, Lu DY, Zhang WH
106 - 109	Study of high-brightness flat-panel lighting source using carbon-nanotube cathode Zhang Y, Deng SZ, Duan CY, Chen J, Xu NS
110 - 116	Effective energy densities in KrF excimer laser reformation as a sidewall smoothing technique Liang EZ, Hung SC, Hsieh P, Lin CF
117 - 121	Facet formation and lateral overgrowth of selective Ge epitaxy on SiO2-patterned Si(001) substrates Park JS, Bai J, Curtin M, Carroll M, Lochtefeld A
122 - 127	Fabrication of silicon kinoform lenses for hard x-ray focusing by electron beam lithography and deep reactive ion etching Stein A, Evans-Lutterodt K, Bozovic N, Taylor A
128 - 131	Photoresist characterization using double exposures with interference lithography O'Reilly TB, Smith HI
132 - 136	Novel hydrostatic pressuring mechanism for soft UV-imprinting processes Cheng FS, Yang SY, Chen CC
137 - 140	Analysis of temperature-dependent barrier heights in erbium-silicided Schottky diodes Jun M, Jang M, Kim Y, Choi C, Kim T, Oh S, Lee S
141 - 150	Effect of temperature on copper damascene chemical mechanical polishing process Kakireddy VR, Mudhivarthi S, Kumar A
151 - 155	Patterned wafer defect density analysis of step and flash imprint lithography McMackin I, Martin W, Perez J, Selinidis K, Maltabes J, Xu F, Resnick D, Sreenivasan SV
156 - 158	Soft photocurable nanoimprint lithography for compound semiconductor nanostructures Meneou K, Cheng KY
159 - 163	Electrical conductivity of ultra-thin silicon nanowires Rochdi N, Tonneau D, Jandard F, Dallaporta H, Safarov V, Gautier J
164 - 170	Erbium silicide formation and its contact properties on Si(100) Huang W, Ru GP, Jiang YL, Qu XP, Li BZ, Liu R, Lu F
171 - 174	Luminescence uniformity studies on dendrite bamboo carbon submicron-tube field-emitter arrays Li X, Ding FQ, Liu WH, He YN, Zhu CC
175 - 180	Structural and electrical studies of conductive nanowires prepared by focused ion beam induced deposition Reguer A, Bedu F, Tonneau D, Dallaporta H, Prestigiacomo M, Houel A, Sudraud P
181 - 188	Plasma reactor dry cleaning strategy after TiN, TaN and HfO2 etching processes Ramos R, Cunge G, Joubert O
189 - 194	Hybrid nanofabrication processes utilizing diblock copolymer nanotemplate prepared by self-assembled monolayer based surface neutralization Kim SJ, Maeng WJ, Lee SK, Park DH, Bang SH, Kim H, Sohn BH
195 - 200	Measurements of local optical properties of Si-doped GaAs (110) surfaces using modulation scanning tunneling microscope cathodoluminescence spectroscopy Watanabe K, Nakamura Y, Ichikawa M
201 - 205	Inelastic deformability of nanopillar by focused-ion-beam chemical vapor deposition Shibutani Y, Yoshioka T
206 - 208	Fabrication of single-crystalline LiTaO3 film on silicon substrate using thin film transfer technology Liu WL, Zhan D, Ma XB
209 - 213	Description of field emission current/voltage characteristics in terms of scaled barrier field values (f-values) Forbes RG
214 - 218	Low-temperature c-axis oriented growth of nanocrystalline ZnO thin films on Si substrates by plasma assisted pulsed laser deposition Shao J, Shen YQ, Sun J, Xu N, Yu D, Lu YF, Wu JD
219 - 226	Mechanistic study of plasma damage of low k dielectric surfaces Bao J, Shi H, Liu J, Huang H, Ho PS, Goodner MD, Moinpour M, Kloster GM
227 - 231	Surface plasmon assisted contact scheme nanoscale photolithography using an UV lamp Shao DB, Chen SC
232 - 243	Low energy electron-excited nanoscale luminescence spectroscopy studies of intrinsic defects in HfO2 and SiO2-HfO2-SiO2-Si stacks Strzhemechny YM, Bataiev M, Tumakha SP, Goss SH, Hinkle CL, Fulton CC, Lucovsky G, Brillson LJ
244 - 248	Novel photocurable epoxy siloxane polymers for photolithography and imprint lithography applications Wang PI, Nalamasu O, Ghoshal R, Schaper CD, Li A, Lu TM
249 - 254	Proximity effects in nanoscale patterning with high resolution electron beam induced deposition Crozier PA
255 - 259	Effect of bis-(3-sodiumsulfopropyl disulfide) byproducts on copper defects after chemical mechanical polishing Hung CC, Lee WH, Hu SY, Chang SC, Chen KW, Wang YL
260 - 263	Hot embossing by Joule heating Lee JC, Leu IC, Lai KL, Hon MH
267 - 272	Junction formation and its device impact through the nodes: From single to coimplants, from beam line to plasma, from single ions to clusters, and from rapid thermal annealing to laser thermal processing Gossmann HJL
273 - 280	Simulation of doping profile formation: Historical evolution, and present strengths and weaknesses Zechner C, Moroz V
281 - 285	Ultrashallow junctions formed by C coimplantation with spike plus submelt laser annealing Felch SB, Collart E, Parihar V, Thirupapuliyur S, Schreutelkamp R, Pawlak BJ, Hoffmann T, Severi S, Eyben P, Vandervorst W, Noda T
286 - 292	Realization of ultrashallow junctions by plasma immersion ion implantation and laser annealing Vervisch V, Etienne H, Torregrosa F, Roux L, Ottaviani L, Pasquinelli M, Sarnet T, Delaporte P
293 - 297	Optimum activation and diffusion with a combination of spike and flash annealing Paul S, Lerch W, Chan J, Mccoy S, Gelpey J, Cristiano F, Severac F, Fazzini PF, Bolze D
298 - 304	Characterization of an ultrashallow junction structure using angle resolved x-ray photoelectron spectroscopy and medium energy ion scattering Saheli G, Conti G, Uritsky Y, Foad MA, Brundle CR, Mack P, Kouzminov D, Werner M, van den Berg JA
305 - 309	Bragg diffraction, synchrotron x-ray reflectance, and x-ray photoelectron spectroscopy studies of low temperature plasma oxidation of native SiO2 on silicon on insulator Bhargava M, Donner W, Srivastava AK, Wolfe JC
310 - 316	Advances in optical carrier profiling through high-frequency modulated optical reflectance Bogdanowicz J, Dortu F, Clarysse T, Vandervorst W, Shaughnessy D, Salnik A, Nicolaides L, Opsal J
317 - 321	Advanced carrier depth profiling on Si and Ge with micro four-point probe Clarysse T, Eyben P, Parmentier B, Van Daele B, Satta A, Vandervorst W, Lin R, Petersen DH, Nielsen PF
322 - 332	Impact of band gap narrowing and surface recombination on photoelectrothermal modulated optical reflectance power curves Dortu F, Bogdanowicz J, Clarysse T, Vandervorst W
333 - 337	Effect of low Ge content on B diffusion in amorphous SiGe alloys Edelman LA, Elliman RG, Rubin L, Washington L, Jones KS
338 - 341	Impact of the environmental conditions on the electrical characteristics of scanning spreading resistance microscopy Eyben P, Mody J, Vemula SC, Vandervorst W
342 - 346	Defect evolution after germanium preamorphization in silicon on insulator structures Fazzinia PF, Cristiano F, Dupre C, Claverie A, Ernst T, Gavelle M
347 - 350	Interaction of the end of range defect band with the upper buried oxide interface for B and BF2 implants in Si and silicon on insulator with and without preamorphizing implant Kah M, Smith AJ, Hamilton JJ, Sharp J, Yeong SH, Colombeau B, Gwilliam R, Webb RP, Kirkby KJ
351 - 356	Toward extending the capabilities of scanning spreading resistance microscopy for fin field-effect-transistor-based structures Mody J, Eyben P, Augendre E, Richard O, Vandervorst W
357 - 361	Level set modeling of the orientation dependence of solid phase epitaxial regrowth Morarka S, Rudawski NG, Law ME
362 - 367	Comparative study of size dependent four-point probe sheet resistance measurement on laser annealed ultra-shallow junctions Petersen DH, Lin R, Hansen TM, Rosseel E, Vandervorst W, Markvardsen C, Kjaer D, Nielsen PF
368 - 372	Boron cathodic arc as an ion source for shallow junction ion implantation of boron Williamsa JM, Klepper CC, Chivers DJ, Hazelton RC, Moschella JJ
373 - 376	Properties of ultralow energy boron implants using octadecaborane Ameen MS, Rubin LM, Harris MA, Huynh C
377 - 381	Evolution of fluorine and boron profiles during annealing in crystalline Si Lopeza P, Pelaz L, Duffy R, Meunier-Beillard P, Roozeboom F, van der Tak K, Breimer P, van Berkum JGM, Verheijen MA, Kaiser M
382 - 385	B clustering in amorphous Si De Salvador D, Bisognin G, Di Marino M, Napolitani E, Carnera A, Mirabella S, Pecora E, Bruno E, Priolo F, Graoui H, Foad MA, Boscherini F
386 - 390	He implantation to control B diffusion in crystalline and preamorphized Si Bruno E, Mirabella S, Priolo F, Kuitunen K, Tuomisto F, Slotte J, Giannazzo F, Bongiorno C, Raineri V, Napolitani E
391 - 395	Antimony for n-type metal oxide semiconductor ultrashallow junctions in strained Si: A superior dopant to arsenic? Bennett NS, Smith AJ, Gwilliam RM, Webb RP, Sealy BJ, Cowern NEB, O'Reilly L, McNally PJ
396 - 401	Probing doping conformality in fin shaped field effect transistor structures using resistors Vandervorst W, Jurczak M, Everaert JL, Pawlak BJ, Duffy R, Del-Agua-Bomiquel JI, Poon T
402 - 407	Doping fin field-effect transistor sidewalls: Impurity dose retention in silicon due to high angle incident ion implants and the impact on device performance Duffy R, Curatola G, Pawlak BJ, Doornbos G, van der Tak K, Breimer P, van Berkum JGM, Roozeboom F
408 - 414	Application of electron holography to analysis of submicron structures Gribelyuk MA, Domenicucci AG, Ronsheim PA, McMurray JS, Gluschenkov O
415 - 419	Carrier concentration profiling on oxidized surfaces of Si device cross sections by resonant electron tunneling scanning probe spectroscopy Bolotov L, Nishizawa M, Kanayama T, Miura Y
420 - 424	Insights in junction photovoltage based sheet resistance measurements for advanced complementary metal-oxide semiconductor Clarysse T, Moussa A, Zangerle T, Schaus F, Vandervorst W, Faifer V, Current M
425 - 429	Defects in Ge and Si caused by 1 MeV Si+ implantation Hickey DP, Bryan ZL, Jones KS, Elliman RG, Haller EE
430 - 434	P implantation into preamorphized germanium and subsequent annealing: Solid phase epitaxial regrowth, P diffusion, and activation Posselt M, Schmidt B, Anwand W, Grotzschel R, Heera V, Mucklich A, Wundisch C, Skorupa W, Hortenbach H, Gennaro S, Bersani M, Giubertoni D, Moller A, Bracht H
435 - 438	Influence of As on the formation of mask-edge defects during stressed solid phase epitaxy in patterned Si wafers Rudawski NG, Jones KS, Elliman RG
439 - 442	Dissolution of extended defects in strained silicon Moroz V, Martin-Bragado I, Felch S, Nouri F, Olsen C, Jones KS
L10 - L12	Fabrication of ideally ordered anodic porous alumina with large area by vacuum deposition of Al onto mold Nishio K, Yanagishita T, Hatakeyama S, Maegawa H, Masuda H
L13 - L18	Flexible polymeric rib waveguide with self-align couplers system Huang CS, Wang WC
L19 - L22	Reducing imaging defects in high-resolution photolithography Wang F, Stanton WA