A31 - A31 |
Papers from the 47th International Symposium of AVS - Preface Lucovsky G |
1037 - 1041 |
Photovoltaic characteristics of BR/p-silicon heterostructures using surface photovoltage spectroscopy Li LS, Xu T, Zhang YJ, Jin J, Li TJ, Zou BS, Wang JP |
1042 - 1045 |
Observation of the bone matrix structure of intact and regenerative zones of tibias by atomic force microscopy Baranauskas V, Garavello-Freitas I, Jingguo Z, Cruz-Hofling MA |
1046 - 1051 |
Structural and electrical characteristics of chemical vapor deposited W/n-Si0.83Ge0.17/Si(001) and chemical vapor deposited WSix/n-Si0.83Ge0.17/Si(001) Jang YC, Shin DO, Kim KS, Shim KH, Lee NE, Youn SP, Roh KJ, Roh YH |
1052 - 1056 |
Fabrication of smooth diamond films on SiO2 by the addition of nitrogen to the gas feed in hot-filament chemical vapor deposition Baranauskas V, Peterlevitz AC, Zhao JG, Durrant SF |
1057 - 1062 |
Micro-crystalline diamond and nano-carbon structures produced using a high argon concentration in hot-filament chemical vapor deposition Baranauskas V, Peterlevitz AC, Ceragioli HJ, Durrant SF |
1063 - 1067 |
Damage in etching of (Ba,Sr)TiO3 thin films using inductively coupled plasma Choi SK, Kim DP, Kim CI, Chang EG |
1068 - 1071 |
Etch characteristics of CeO2 thin films as a buffer layer for the application of ferroelectric random access memory Oh CS, Kim CI, Kwon KH |
1072 - 1077 |
Chemical interaction and adhesion characteristics at the interface of metals (Cu, Ta) and low-k cyclohexane-based plasma polymer (CHexPP) films Kim KJ, Kim KS, Lee NE, Choi J, Jung D |
1078 - 1082 |
Low temperature deposition and characterization of polycrystalline Si films on polymer substrates Xu K, Shah SI, Guerin D |
1083 - 1089 |
Cross-sectional transmission electron microscopy investigation of the dead layer of ZnS : Ag,Al phosphors in field emission displays Kajiwara K |
1090 - 1094 |
Optical filters for plasma display panels using organic dyes and sputtered multilayer coatings Okamura T, Fukuda S, Koike K, Saigou H, Yoshikai M, Koyama M, Misawa T, Matsuzaki Y |
1095 - 1098 |
Effects of ZnO buffer layer on the luminous properties of thin-film phosphors deposited on ZnO/ITO/glass substrates Kim YJ, Chung SM, Jeong YH, Lee YE |
1099 - 1104 |
Investigation of the outgassing characteristics of the materials comprising a plasma display panel Han HR, Lee YJ, Yeom GY |
1105 - 1110 |
In situ analysis of perfluoro compounds in semiconductor process exhaust: Use of Li+ ion-attachment mass spectrometry Nakamura M, Hino K, Sasaki T, Shiokawa Y, Fujii T |
1111 - 1115 |
Quantitative comparison between Auger electron spectroscopy and secondary ion mass spectroscopy depth profiles of a double layer structure of AlAs in GaAs using the mixing-roughness-information depth model Hofmann S, Rar A, Moon DW, Yoshihara K |
1116 - 1120 |
Surface characterization of IM7/5260 composites by x-ray photoelectron spectroscopy Ohno S, Lee MH, Lin KY, Ohuchi FS |
1121 - 1125 |
Pt-metal oxide aerogel catalysts: X-ray photoemission investigation Nelson AJ, Reynolds JG, Sanner RD, Coronado PR, Hair LM |
1126 - 1133 |
Scanning Auger microscopy studies of an ancient bronze Paparazzo E, Lea AS, Baer DR, Northover JP |
1134 - 1138 |
Comparative ion yields by secondary ion mass spectrometry from microelectronic films Parks CC |
1139 - 1142 |
Surface potential measurement with high spatial resolution using a scanning Auger electron microscope Sakai Y, Kudo M, Nielsen C |
1143 - 1149 |
Chemical effects on FKLL Auger spectra in fluorides Kover L, Uda M, Cserny I, Toth J, Vegh J, Varga D, Ogasawara K, Adachi H |
1150 - 1157 |
X-ray photoelectron spectroscopy, x-ray absorption spectroscopy, and x-ray diffraction characterization of CuO-TiO2-CeO2 catalyst system Francisco MSP, Nascente PAP, Mastelaro VR, Florentino AO |
1158 - 1163 |
Chemical and structural characterization of V2O5/TiO2 catalysts Rodella CB, Nascente PAP, Mastelaro VR, Zucchi MR, Franco RWA, Magon CJ, Donoso P, Florentino AO |
1164 - 1169 |
Interface formation and electrical properties of a TiNx/SiO2/Si structure for application in gate electrodes Kim KS, Jang YC, Kim KJ, Lee NE, Youn SP, Roh KJ, Roh YH |
1170 - 1175 |
Interpretation of the Shirley background in x-ray photoelectron spectroscopy analysis Castle JE, Salvi AM |
1176 - 1181 |
Formation of potentially protective oxide-free phosphate films on titanium characterized by valence band x-ray photoelectron spectroscopy Rotole JA, Gaskell K, Comte A, Sherwood PMA |
1182 - 1185 |
Growth and magnetic properties of ultrathin Fe on Pd(110) Cuenya BR, Pearson J, Yu CT, Li DQ, Bader SD |
1186 - 1190 |
Effect of composition and microstructure on temperature coefficient of resistance of polycrystalline La1-xCaxMnO3 thin films Lai CH, Hsu CF, Chin YC, Chiang CD |
1191 - 1194 |
Preparation of cross-sectional transmission electron microscopy specimens of obliquely deposited magnetic thin films on a flexible tape Keim EG, Bijker MD, Lodder JC |
1195 - 1198 |
Determination of magnetostriction for spin-valve devices with 5.0 and 10.0 nm Permalloy layers Gafron TJ, Russek SE, Burkett SL |
1199 - 1202 |
Analysis of tunneling magnetoresistance test structures by low energy electron nanoscale-luminescence spectroscopy Goss SH, Parkin SSP, Brillson LJ |
1203 - 1206 |
Corrosion behavior of Co-Sm based magnetic media Zana L, Zangari G |
1207 - 1212 |
Surface processing with gas-cluster ions to improve giant magnetoresistance films Fenner DB, Hautala J, Allen LP, Tetreault TG, Al-Jibouri A, Budnick JI, Jones KS |
1213 - 1218 |
Study of exchange anisotropy for Ni80Fe20/Fe60Mn40 (111) epitaxial films Liu CX, Du JH, Barnard JA, Mankey GJ |
1219 - 1223 |
Micro-electro-mechanical system fabrication technology applied to large area x-ray image sensor arrays Daniel JH, Krusor B, Apte RB, Mulato M, Van Schuylenbergh K, Lau R, Do T, Street RA, Goredema A, Boils-Boissier DC, Kazmaier PM |
1224 - 1228 |
A novel antistiction method using harmonic excitation on the microstructure Lai WP, Fang W |
1229 - 1233 |
Nano- and microchannel fabrication using column/void network deposited silicon Nam WJ, Bae S, Kalkan AK, Fonash SJ |
1234 - 1240 |
Investigation of the adhesion, friction, and wear properties of biphenyl thiol self-assembled monolayers by atomic force microscopy Liu HW, Bhushan B, Eck W, Stadler V |
1241 - 1247 |
Data requirements and communication issues for advanced process control Markle RJ, Coss E |
1248 - 1254 |
The application of in situ monitor of extremely rarefied particle clouds grown thermally above wafers by using laser light scattering method to the development of the mass-production condition of the tungsten thermal chemical vapor deposition Ito N, Moriya T, Uesugi F, Moriya S, Aomori M, Kato Y |
1255 - 1260 |
Study on temperature calibration of a silicon substrate in a temperature programmed desorption analysis Hirashita N, Jimbo T, Matsunaga T, Matsuura M, Morita M, Nishiyama I, Nishizuka M, Okumura H, Shimazaki A, Yabumoto N |
1261 - 1265 |
Friction force microscopy study on photodegradation of organosilane self-assembled monolayers irradiated with a vacuum ultraviolet light at 172 nm Sugimura H, Hayashi K, Amano Y, Takai O, Hozumi A |
1266 - 1269 |
Monolayer formation of 6-deoxy-6-thiol-beta-cyclodextrin on a Au(111) surface studied by scanning tunneling microscopy Yasuda S, Futaba DN, Takeuchi O, Suzuki I, Yase K, Sumaoka J, Komiyama M, Shigekawa H |
1270 - 1276 |
Investigation of the morphology of the initial growth of the aromatic molecule p-quaterphenyl on NaCl (001) Kintzel EJ, Smilgies DM, Skofronick JG, Safron SA, Van Winkle DH, Trelenberg TW, Akhadov EA, Flaherty FA |
1277 - 1281 |
Effect of dry etching conditions on surface morphology and optical properties of GaN films in chlorine-based inductively coupled plasmas Hahn YB, Im YH, Park JS, Nahm KS, Lee YS |
1282 - 1288 |
Observation of surface reaction layers formed in highly selective SiO2 etching Matsui M, Tatsumi T, Sekine M |
1289 - 1293 |
Etching mechanism of YMnO3 thin films in Cl-2/Ar gas chemistries Min BJ, Kim CI, Kim YT |
1294 - 1297 |
Ion compositions and energies in inductively coupled plasmas containing SF6 Goyette AN, Wang YC, Olthoff JK |
1298 - 1303 |
Ion energy and angular distribution at the radio frequency biased electrode in an inductively coupled plasma apparatus Mizutani N, Hayashi T |
1304 - 1307 |
Spatial distribution of carbon species in laser ablation of graphite target Ikegami T, Ishibashi S, Yamagata Y, Ebihara K, Thareja RK, Narayan J |
1308 - 1311 |
Improved etch characteristics Of SiO2 by the enhanced inductively coupled plasma Cho SB, Song HY, Park SG, O BH |
1312 - 1314 |
Effect of temperature on etch rate of iridium and platinum in CF4/O-2 Maa JS, Ying H, Zhang FY |
1315 - 1319 |
Dry etching of SrBi2Ta2O9 thin films in Cl-2/NF3/O-2/Ar inductively coupled plasmas Im YH, Park JS, Choi CS, Choi RJ, Hahn YB, Lee SH, Lee JK |
1320 - 1324 |
Structure control of pulsed laser deposited ZrO2/Y2O3 films Voevodin AA, Jones JG, Zabinski JS |
1325 - 1329 |
Ion energy distributions in a pulsed, electron beam-generated plasma Walton SG, Leonhardt D, Blackwell DD, Fernsler RF, Murphy DP, Meger RA |
1330 - 1335 |
Probe diagnostic development for electron beam produced plasmas Blackwell DD, Walton SG, Leonhardt D, Murphy DP, Fernsler RF, Amatucci WE, Meger RA |
1336 - 1340 |
Ion-assisted deposition of silicon nitride films using electron cyclotron resonance plasma Vargheese KD, Rao GM |
1341 - 1345 |
Plasma etching of lead germanate (PGO) ferroelectric thin film Ying H, Li TK, Maa JS, Zhang FY, Hsu ST, Gao YF, Engelhard M |
1346 - 1352 |
Simulation of the production of atomic hydrogen in a low-pressure-arc-discharge-based source Kagadei VA, Kozyrev AV, Proskurovsky DI, Osipov IV |
1353 - 1360 |
Physical and electrical properties of noncrystalline Al2O3 prepared by remote plasma enhanced chemical vapor deposition Johnson RS, Lucovsky G, Baumvol I |
1361 - 1366 |
Etching of high-k dielectric Zr1-xAlxOy films in chlorine-containing plasmas Pelhos K, Donnelly VM, Kornblit A, Green ML, Van Dover RB, Manchanda L, Hu Y, Morris M, Bower E |
1367 - 1373 |
Plasma diagnostics in large area plasma processing system Leonhardt D, Walton SG, Blackwell DD, Amatucci WE, Murphy DP, Fernsler RF, Meger RA |
1374 - 1378 |
Relationship between deprotection and film thickness loss during plasma etching of positive tone chemically amplified resists Mahorowala AP, Medeiros DR |
1379 - 1383 |
Novel technique to enhance etch selectivity of carbon antireflective coating over photoresist based on O-2/CHF3/Ar gas chemistry Hong J, Jeon JS, Kim YB, Min GJ, Ahn TH |
1384 - 1387 |
Understanding the evolution of trench profiles in the via-first dual damascene integration scheme Kropewnicki T, Doan K, Tang B, Bjorkman C |
1388 - 1391 |
Trench etch processes for dual damascene patterning of low-k dielectrics Jiang P, Celii FG, Dostalik WW, Newton KJ, Sakima H |
1392 - 1398 |
Influence of the interface composition on the corrosion behavior of unbalanced magnetron grown niobium coatings on steel Schonjahn C, Paritong H, Munz WD, Twesten RD, Petrov I |
1399 - 1403 |
Tribological performance of a novel high wear resistant high SiAl-Si alloy weld overlay Ott RD, Blue CA, Santella ML, Blau PJ |
1404 - 1414 |
Interface engineering and graded films: Structure and characterization Bull SJ |
1415 - 1420 |
Optimization of in situ substrate surface treatment in a cathodic arc plasma: A study by TEM and plasma diagnostics Schonjahn C, Ehlasarian AP, Lewis DB, New R, Munz WD, Twesten RD, Petrov I |
1421 - 1424 |
Laterally graded multilayers and their applications Liu CA, Macrander A, Als-Nielsen J, Zhang K |
1425 - 1431 |
Enhanced passivity of austenitic AISI 304 stainless steel by low-temperature ion nitriding Rudenja S, Pan J, Wallinder IO, Leygraf C, Kulu P, Mikli V |
1432 - 1437 |
General rule for predicting surface segregation of substrate metal on film surface Yoshitake M, Aparna YR, Yoshihara K |
1438 - 1441 |
High rate sputtering for Ni films by an rf-dc coupled magnetron sputtering system with multipolar magnetic plasma confinement Kawabata K, Tanaka T, Kitabatake A, Yamada K, Mikami Y, Kajioka H, Toiyama K |
1442 - 1446 |
Corrosion resistance of chromium nitride on low alloy steels by cathodic arc deposition Han S, Lin JH, Wang DY, Lu FH, Shih HC |
1447 - 1453 |
Electrochemical characterization and surface analysis of bulk amorphous alloys in aqueous solutions at different pH Schennach R, Grady T, Naugle DG, McWhinney H, Hays CC, Johnson WL, Cocke DL |
1454 - 1459 |
Tribocharging in electrostatic beneficiation of coal: Effects of surface composition on work function as measured by x-ray photoelectron spectroscopy and ultraviolet photoelectron spectroscopy in air Trigwell S, Mazumder MK, Pellissier R |
1460 - 1466 |
Study of high- and low-work-function surfaces for hyperthermal surface ionization using an absolute Kelvin probe Baikie ID, Peterman U, Lagel B, Dirscherl K |
1467 - 1473 |
Oxygen loss and recovering induced by ultrahigh vacuum and oxygen annealing on WO3 thin film surfaces: Influences on the gas response properties Santucci S, Lozzi L, Maccallini E, Passacantando M, Ottaviano L, Cantalini C |
1474 - 1480 |
Adsorption, decomposition, and stabilization of 1,2-dibromoethane on Cu(111) Chan ASY, Jones RG |
1481 - 1484 |
Resonances in electron-stimulated desorption of Eu atoms Ageev VN, Kuznetsov YA, Madey TE |
1485 - 1489 |
Photon-stimulated ion desorption from mono- and multilayered silicon alkoxide on silicon by core-level excitation Baba Y, Wu G, Sekiguchi T, Shimoyama I |
1490 - 1496 |
Surface treatment and characterization of PMMA, PHEMA, and PHPMA Lim H, Lee Y, Han S, Cho J, Kim KJ |
1497 - 1501 |
Adsorption and reaction of ethene on oxide-supported Pd, Rh, and Ir particles Frank M, Baumer M, Kuhnemuth R, Freund NJ |
1502 - 1509 |
Effect of surface treatment on the gamma-WO3(001) surface: A comprehensive study of oxidation and reduction by scanning tunneling microscopy and low-energy electron diffraction Tanner RE, Altman EI |
1510 - 1515 |
Surface science models for CoMo hydrodesulfurization catalysts: Influence of the support on hydrodesulfurization activity Coulier L, Kishan G, van Veen JAR, Niemantsverdriet JW |
1516 - 1523 |
Reaction kinetics on supported model catalysts: Molecular beam/in situ time-resolved infrared reflection absorption spectroscopy study of the CO oxidation on alumina supported Pd particles Libuda J, Meusel I, Hoffmann J, Hartmann J, Freund HJ |
1524 - 1530 |
Comparison of phosgene formation from adsorption of carbon tetrachloride on oxygen modified Ir(111) and oxygen modified Ir(110) Meyer RJ, Reeves CT, Safarik DJ, Allen DT, Mullins CB |
1531 - 1536 |
Chemistry and aging of organosiloxane and fluorocarbon films grown from hyperthermal polyatomic ions Hanley L, Fuoco E, Wijesundara MBJ, Beck AJ, Brookes PN, Short RD |
1537 - 1542 |
Interaction of chlorodifluoromethane with ultrathin solid water films Safarik DJ, Meyer RJ, Mullins CB |
1543 - 1548 |
Molecular dynamics simulations of the trapping of ethane on Si(100)-(2x1): Effect of rotational energy and surface temperature Reeves CT, Stiehl JD, Mullins CB, Sitz GO |
1549 - 1552 |
Characteristic structures of the Si(111)-7x7 surface step studied by scanning tunneling microscopy Miyake K, Okawa S, Takeuchi O, Futaba DN, Hata K, Morita R, Yamashita M, Shigekawa H |
1553 - 1561 |
Transition from thermally grown gate dielectrics to deposited gate dielectrics for advanced silicon devices: A classification scheme based on bond ionicity Lucovsky G |
1562 - 1565 |
Tungsten silicide for the alternate gate metal in metal-oxide-semiconductor devices Roh K, Youn S, Yang S, Roh Y |
1566 - 1570 |
Influence of annealing temperature on simultaneous vapor deposited calcium phosphate thin films Hamdi M, Ektessabi AM |
1571 - 1576 |
Deposition of electronic quality amorphous silicon, a-Si : H, thin films by a hollow cathode plasma-jet reactive sputtering system Pribil G, Hubicka Z, Soukup RJ, Ianno NJ |
1577 - 1581 |
Supermagnetron plasma chemical vapor deposition and qualitative analysis of electrically conductive diamond-like amorphous carbon films Kinoshita H, Yoshida M |
1582 - 1585 |
Energetic oxygen ions in the reactive sputtering of the Zr target in Ar+O-2 atmosphere Tominaga K, Kikuma T |
1586 - 1590 |
Low temperature aluminum nitride deposition on aluminum by rf reactive sputtering Tait RN, Mirfazli A |
1591 - 1594 |
Investigation of the W-TiN metal gate for metal-oxide-semiconductor devices Youn S, Roh K, Yang S, Roh Y, Kim KS, Jang YC, Lee NE |
1595 - 1599 |
Effect of interlayer on thermal stability of nickel silicide Maa JS, Ono Y, Tweet DJ, Zhang FY, Hsu ST |
1600 - 1605 |
Optical and structural properties of sol-gel SiO2 layers containing cobalt Ramos-Mendoza A, Tototzintle-Huitle H, Mendoza-Galvan A, Gonzalez-Hernandez J, Chao BS |
1606 - 1610 |
Deposition and properties of tetrahedral amorphous carbon films prepared on magnetic hard disks Chan CY, Lai KH, Fung MK, Wong WK, Bello I, Huang RF, Lee CS, Lee ST, Wong SP |
1611 - 1616 |
Structural, morphological, and mechanical properties of plasma deposited hydrogenated amorphous carbon thin films: Ar gas dilution effects Valentini L, Kenny JM, Mariotto G, Tosi P, Carlotti G, Socino G, Lozzi L, Santucci S |
1617 - 1622 |
Wet oxidation behaviors of polycrystalline Si1-xGex films Kang SK, Ko DH, Lee KC, Lee TW, Lee YH, Ahn TH, Yeo IS, Oh SH, Park CG |
1623 - 1629 |
Mechanism of the isotermic amorphous-to-crystalline phase transition in Ge : Sb : Te ternary alloys Gonzalez-Hernandez J, Prokhorov EF, Vorobiev YV, Morales-Sanchez E, Mendoza-Galvan A, Kostylev SA, Gorobets YI, Zakharchenko VN, Zakharchenko RV |
1630 - 1635 |
Extension velocities for level set based surface profile evolution Richards DF, Bloomfield MO, Sen S, Cale TS |
1636 - 1641 |
Effects of excess oxygen introduced during sputter deposition on carrier mobility in as-deposited and postannealed indium-tin-oxide films Kikuchi N, Kusano E, Kishio E, Kinbara A, Nanto H |
1642 - 1646 |
Preparation and properties of transparent conductive aluminum-doped zinc oxide thin films by sol-gel process Alam MJ, Cameron DC |
1647 - 1651 |
Synthesis and characterization of transparent conducting oxide cobalt-nickel spinel films Windisch CF, Ferris KF, Exarhos GJ |
1652 - 1656 |
Measurements of photon stimulated desorption from thick and thin oxide of KEKB collider copper beam chambers and a stainless steel beam chamber Foerster CL, Lanni C, Foerster CL |
1657 - 1661 |
Study of the exposure-dose-dependent photon-stimulated-desorption phenomena Hsiung GY, Young KY, Hsu YJ, Chen JR |
1662 - 1665 |
Vacuum characteristics of sprayed metal films Minato M, Iwamoto H |
1666 - 1673 |
Edison's vacuum coating patents Waits RK |
1674 - 1678 |
Method for calculation of gas flow in the whole pressure regime through ducts of any length Livesey RG |
1679 - 1687 |
Free jets in vacuum technologies Rebrov AK |
1688 - 1692 |
Development of the quadrupole mass spectrometer with the Bessel-Box type energy analyzer: Function of the energy analyzer in the partial pressure measurements Takahashi N, Hayashi T, Akimichi H, Tuzi Y |
1693 - 1698 |
Summary of quick disconnect vacuum flanges Mapes M |
1699 - 1703 |
Cornell Electron Storage Ring phase-III interaction region vacuum chamber He Y, Li YL, Mistry NB, Greenwald S |
1704 - 1707 |
Rapid cooling dual slot load locks for liquid crystal display Hosokawa A, Blonigan W, Kurita S |
1708 - 1711 |
Design and operation of scroll-type dry primary vacuum pumps Liepert A, Lessard P |
1712 - 1719 |
Practical guide to the use of Bayard-Alpert ionization gauges Singleton JH |
1720 - 1724 |
Study of ZrO2 thin films for gate oxide applications Nam SW, Yoo JH, Kim HY, Kang SK, Ko DH, Yang CW, Lee HJ, Cho MH, Ku JH |
1725 - 1729 |
Oxidation of H-covered flat and vicinal Si(111)-1x1 surfaces Zhang X, Chabal YJ, Christman SB, Chaban EE, Garfunkel E |
1730 - 1736 |
Process window extension of TiN diffusion barrier using preoxidation of Ru and RuOx film for (Ba,Sr)TiO3 dielectric film Yoon DS, Hong K, Roh JS |
1737 - 1741 |
Technology for the fabrication of ultrashort channel metal-oxide-semiconductor field-effect transistors Knoch J, Appenzeller J, Lengeler B, Martel R, Solomon P, Avouris P, Dieker C, Lu Y, Wang KL, Scholvin J, del Alamo JA |
1742 - 1746 |
Oxide phosphor thin-film electroluminescent devices fabricated by magnetron sputtering with rapid thermal annealing Minami T, Toda H, Miyata T |
1747 - 1751 |
Low-k materials etching in magnetic neutral loop discharge plasma Morikawa Y, Yasunami S, Chen W, Hayashi T, Uchida T |
1752 - 1757 |
Scanning spreading resistance microscopy study of a metalorganic chemical vapor deposited grown InP optoelectronic structure Dixon-Warren S, Lu RP, Ingrey S, Macquistan D, Bryskiewicz T, Smith G, Bryskiewicz B |
1758 - 1762 |
Fabrication of ferromagnetic/semiconductor waveguide structures and application to microwave bandstop filter Wu W, Lee CC, Tsai CS, Su J, So W, Yoo J, Chuang R |
1763 - 1768 |
Calibrated magnetic force microscopy measurement of current-carrying lines Yongsunthon R, McCoy J, Williams ED |
1769 - 1772 |
Scanning Hall probe microscopy on an atomic force microscope tip Chong BK, Zhou H, Mills G, Donaldson L, Weaver JMR |
1773 - 1776 |
Ferromagnetic resonance of monodisperse Co particles Wiedwald U, Spasova M, Farle M, Hilgendorff M, Giersig M |
1777 - 1785 |
Static friction and surface roughness studies of surface micromachined electrostatic micromotors using an atomic force/friction force microscope Sundararajan S, Bhushan B |
1786 - 1789 |
Field-emission properties of vertically aligned carbon-nanotube array dependent on gas exposures and growth conditions Lim SC, Jeong HJ, Park YS, Bae DS, Choi YC, Shin YM, Kim WS, An KH, Lee YH |
1790 - 1795 |
Carbon nanotube-based electron gun for electron microscopy Leopold JG, Zik O, Cheifetz E, Rosenblatt D |
1796 - 1799 |
Growth of well-aligned carbon nanotubes on nickel by hot-filament-assisted dc plasma chemical vapor deposition in a CH4/H-2 plasma Hayashi Y, Negishi T, Nishino S |
1800 - 1805 |
Gas-phase production of carbon single-walled nanotubes from carbon monoxide via the HiPco process: A parametric study Bronikowski MJ, Willis PA, Colbert DT, Smith KA, Smalley RE |
1806 - 1811 |
Selective-area chemical-vapor deposition of Si using a bilayer dielectric mask patterned by proximal probe oxidation Gwo S, Yasuda T, Yamasaki S |
1812 - 1816 |
Amino-terminated self-assembled monolayer on a SiO2 surface formed by chemical vapor deposition Hozumi A, Yokogawa Y, Kameyama T, Sugimura H, Hayashi K, Shirayama H, Takai O |
1817 - 1821 |
Surface acoustic wave investigation by ultrahigh vacuum scanning tunneling microscopy Voigt PU, Krauss S, Chilla E, Koch R |
1822 - 1824 |
Method for navigating two scanning probes to a common point without additional microscopes Okamoto H, Chen DM |
1825 - 1828 |
Nanomechanical properties of molecular organic thin films Caro J, Fraxedas J, Gorostiza P, Sanz F |
1829 - 1834 |
Self-organization of large-area periodic nanowire arrays by glancing incidence ion bombardment of CaF2(111) surfaces Batzill M, Bardou F, Snowdon KJ |
1835 - 1839 |
Aspect ratio dependent plasma-induced charging damage in rf precleaning of a metal contact Kim J, Shin KS, Park WJ, Kim YJ, Kang CJ, Ahn TH, Moon JT |
1840 - 1845 |
Reactive magnetron sputter-deposition of NbN and (Nb,Ti)N films related to sputtering source characterization and optimization Iosad NN, Jackson BD, Polyakov SN, Dmitriev PN, Klapwijk TM |
1846 - 1849 |
Process development for small-area GaN/AlGaN heterojunction bipolar transistors Lee KP, Zhang AP, Dang G, Ren F, Hobson WS, Lopata J, Abenathy CR, Pearton SJ, Lee JW |
1850 - 1853 |
Two-step metalorganic chemical vapor deposition growth of piezoelectric ZnO thin film on SiO2/Si substrate Muthukumar S, Emanetoglu NW, Patounakis G, Gorla CR, Liang S, Lu Y |
1854 - 1861 |
Characterization of residues formed by anhydrous hydrogen fluoride etching of doped oxides Muscat AJ, Thorsness AG, Montano-Miranda G |
1862 - 1867 |
Critical behavior of epitaxial Si1-xGex/Si(001) islands Budiman RA, Ruda HE, Perovic DD, Bahierathan B |
1868 - 1870 |
Adatom assisted stabilization of ad dimers on Ge(001) Zoethout E, Zandvliet HJW, Poelsema B |
1871 - 1877 |
Investigation of the penetration of atomic hydrogen from the gas phase into SiO2/GaAs Kagadei VA, Nefyodtsev EV, Proskurovsky DI |
1878 - 1881 |
High density plasma via hole etching in SiC Cho H, Lee KP, Leerungnawarat P, Chu SNG, Ren F, Pearton SJ, Zetterling CM |
1882 - 1886 |
Reflection high-energy electron diffraction study of ion-beam induced carbonization for 3C-SiC heteroepitaxial growth on Si (100) Tsubouchi N, Chayahara A, Mokuno Y, Kinomura A, Horino Y |
1887 - 1893 |
Epitaxial growth of cubic SiC thin films on silicon using single molecular precursors by metalorganic chemical vapor deposition Boo JH, Lee SB, Lee KW, Yu KS, Kim Y, Yeon SH, Jung IN |
1894 - 1897 |
Visible emission from amorphous AlN thin-film phosphors with Cu, Mn, or Cr Martin AL, Spalding CM, Dimitrova VI, Van Patten PG, Caldwell ML, Kordesch ME, Richardson HH |
1898 - 1901 |
Investigation of polycrystalline silicon grain structure with single wafer chemical vapor deposition technique Bu H, Hu C, Bevan M, Wang S, Sanchez E, Luo L |
1902 - 1906 |
Cluster deposition study by molecular dynamics simulation: Al and Cu cluster Kang JW, Choi KS, Kang JC, Kang ES, Byun KR, Hwang HJ |
1907 - 1911 |
Atomic-order thermal nitridation of Si(100) and subsequent growth of Si Watanabe T, Sakuraba M, Matsuura T, Murota J |
1912 - 1918 |
Structure and mechanical properties of Ti-Si-C coatings deposited by magnetron sputtering Koutzaki SH, Krzanowski JE |
1919 - 1922 |
Multilayered (Ti, Al) ceramic coating for high-speed machining applications Zeng XT, Zhang S, Tan LS |
1923 - 1928 |
Controlled coordination and oxidation states of copper and manganese cations in complex nickel-copper-cobalt-manganese oxide thin films Kukuruznyak DA, Han SW, Lee MH, Omland KA, Gregg MC, Stern EA, Ohuchi FS |
1929 - 1932 |
Ultraviolet photoemission spectroscopy study of ultrahigh-vacuum-fractured CaVO3 surface Aiura Y, Kawanaka H, Bando H, Yasue T |
1933 - 1937 |
Reactions of acetaldehyde on UO2(111) single crystal surfaces. Evidence of benzene formation Chong SV, Idriss H |
1938 - 1941 |
Metallic electronic states on SrTiO3 (110) surface: An in situ conduction measurement Bando H, Ochiai Y, Aiura Y, Haruyama Y, Yasue T, Nishihara Y |
1942 - 1946 |
Self-diffusion in ceria Perkins CL, Henderson MA, Peden CHF, Herman GS |
1947 - 1952 |
Behavior of ultrathin Al2O3 films in very high electric fields: Scanning tunneling microscope-induced void formation and dielectric breakdown Niu C, Magtoto NP, Kelber JA |
1953 - 1958 |
Tin-oxide overlayer formation by oxidation of Pt-Sn(111) surface alloys Batzill M, Beck DE, Jerdev D, Koel BE |
1959 - 1964 |
Surface characterization of oxidative corrosion of U-Nb alloys Kelly D, Lillard JA, Manner WL, Hanrahan R, Paffett MT |
1965 - 1970 |
Plasma oxidation as a tool to design oxide films at low temperatures Schennach R, Grady T, Naugle DG, Parga JR, McWhinney H, Cocke DL |
1971 - 1976 |
Making superior corrosion resistant aluminum oxide films using ozone-electrochemical and electron microscopy studies Kuznetsova A, Popova I, Zhukov V, Yates JT, Zhou G, Yang JC, Chen X |
1977 - 1982 |
Nature of oxygen at rocksalt and spinel oxide surfaces Langell MA, Kim JG, Pugmire DL, McCarroll W |
1983 - 1987 |
Fermi contours and adsorbate phonon anomalies for Li/Mo(110) and Li/W(110) Rotenberg E, Kevan SD |
1988 - 1992 |
Adsorption of hydrogen on clean and potassium modified low index copper surfaces: Cu(100) and Cu(110) Thomsen L, Onsgaard J, Godowski PJ, Moller P, Hoffmann SV |
1993 - 1995 |
Scanning tunneling microscopy study of the molecular arrangement of meta- and para-xylene on Pd(111) Futaba DN, Landry JP, Loui A, Chiang S |
1996 - 2000 |
Behavior of zirconium surfaces in the presence of oxygen, nitrogen, and hydrogen containing adsorbates Kang YC, Clauss DA, Ramsier RD |
2001 - 2006 |
Chlorosilane adsorption on clean Si surfaces: Scanning tunneling microscopy and Fourier-transform infrared absorption spectroscopy studies Nishizawa M, Yasuda T, Yamasaki S, Shinohara M, Kamakura N, Kimura Y, Niwano M |
2007 - 2012 |
Line of sight techniques: Providing an inventory of all species arriving at and departing from a surface Chan ASY, Skegg MP, Jones RG |
2013 - 2016 |
Near-edge valence-band structure of amorphous hydrogenated Si-C thin films characterized by Auger and photoemission processes Lee MH, Ohuchi FS |
2017 - 2024 |
In situ characterization of thin film growth: Boron nitride on silicon Fukarek W |
2025 - 2033 |
Cluster beam synthesis of nanostructured thin films Milani P, Piseri P, Barborini E, Podesta A, Lenardi C |