Solid-State Electronics

Solid-State Electronics, Vol.45, No.8 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (35 articles)

1205 - 1206	Special issue on dielectrics in microelectronics - Preface Garrido B
1207 - 1217	Ultra-thin SiO2 film studies: index, thickness, roughness and the initial oxidation regime Irene EA
1219 - 1231	Formation of atomically smooth, ultrathin oxides on Si(113) Mussig HJ, Dabrowski J, Hinrich S
1233 - 1240	The different roles of charged and neutral atomic and molecular oxidising species in silicon oxidation from Ab initio calculations Szymanski MA, Stoneham AM, Shluger A
1241 - 1250	Theory and applications of internal photoemission in the MOS system at low electric fields Przewlocki HM
1251 - 1256	Suppression of boron penetration through thin gate oxides by nitrogen implantation into the gate electrode Herden M, Bauer AJ, Beichele M, Ryssel H
1257 - 1263	Feasibility of an isolation by local oxidation of silicon without field implant Fay JL, Beluch J, Despax B, Sarrabayrouse G
1265 - 1270	Determination of the electrical properties of ultrathin silicon-based dielectric films: thermally grown SiNx Pic N, Glachant A, Nitsche S, Hoarau JY, Goguenheim D, Vuillaume D, Sibai A, Chaneliere C
1271 - 1278	High quality thin oxynitride by RTP annealing of in situ steam generation oxides for flash memory applications Brazzelli D, Ghidini G, Crivelli B, Zonca R, Bersani M
1279 - 1291	Select transistor modulated cell array structure test application in EEPROM process reliability Pio F, Gomiero E
1293 - 1297	Effect of boron on gate oxide degradation and reliability in PMOS devices Brozek T, Kyono C, Ilderem V
1299 - 1307	Investigation of plasma damage effects on characteristics and reliability of MOS devices with thin gate dielectrics Brozek T, Huber J, Walls J
1309 - 1316	Experimental study of the current characteristics of thin silicon oxide films under dynamic stress Zahlmann-Nowitzki JW, Nebrich L, Seegebrecht P
1317 - 1325	Two-step stress methodology for monitoring the gate oxide degradation in MOS devices Rodriguez R, Miranda E, Nafria M, Sune J, Aymerich X
1327 - 1332	Breakdown and anti-breakdown events in high-field stressed ultrathin gate oxides Miranda E, Sune J, Rodriguez R, Nafria M, Aymerich X
1333 - 1338	High electric field induced positive charges in thin gate oxide Bellutti P, Zorzi N
1339 - 1344	Evolution from soft to hard breakdown in thin gate oxides: effect of oxide thickness, capacitor area and stress current Cacciato A, Evseev S, Valk H
1345 - 1353	Time decay of stress induced leakage current in thin gate oxides by low-field electron injection Cester A, Paccagnella A, Ghidini G
1355 - 1360	Comparison of oxide leakage currents induced by ion implantation and high field electric stress Goguenheim D, Bravaix A, Monserie C, Moragues JM, Lambert P, Boivin P
1361 - 1369	A recombination- and trap-assisted tunneling model for stress-induced leakage current Ielmini D, Spinelli AS, Lacaita AL, Martinelli A, Ghidini G
1371 - 1381	Low voltage and temperature effects on SILC in stressed ultrathin oxide films Meinertzhagen A, Zander D, Petit C, Jourdain M, Gogenheim D
1383 - 1389	Reliability of ultra-thin N2O-nitrided oxides grown by RTP under low pressure in different gas atmospheres Beichele M, Bauer AJ, Herden M, Ryssel H
1391 - 1401	Hot-carrier degradation in deep-submicrometer nMOSFETs: lightly doped drain vs. large angle tilt implanted drain Rafi JM, Campabadal F
1403 - 1411	Silicon on insulator technologies and devices: from present to future Cristoloveanu S
1413 - 1431	Photo-induced growth of dielectrics with excimer lamps Boyd IW, Zhang JY
1433 - 1440	Growth and characterization of epitaxial ferroelectric PbZrxTi1-xO3 thin film capacitors with SrRuO3 electrodes for non-volatile memory applications Guerrero C, Roldan J, Ferrater C, Garcia-Cuenca MV, Sanchez F, Varela M
1441 - 1450	Tantalum pentoxide obtained from TaNx and TaSi2 anodisation: an inexpensive and thermally stable high k dielectric Duenas S, Castan E, Barbolla J, Kola RR, Sullivan PA
1451 - 1463	Silicon anodic oxides grown in the oscillatory anodisation regime -kinetics of growth, composition and electrical properties Parkhutik V
1465 - 1470	Anodic oxidation as a low thermal budget process for passivation of SiGe Rappich J
1471 - 1478	Single crystalline silicon dioxide films on Mo(112) Schroeder T, Hammoudeh A, Pykavy M, Magg N, Adelt M, Baumer M, Freund HJ
1479 - 1485	Organic thin film transistors: from active materials to novel applications Torsi L, Cioffi N, Di Franco C, Sabbatini L, Zambonin PG, Bleve-Zacheo T
1487 - 1494	Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing Shimizu-Iwayama T, Hama T, Hole DE, Boyd IW
1495 - 1504	Optical and structural characterization of Si nanocrystals ion beam synthesized in SiO2: correlation between the surface passivation and the photoluminescence emission Lopez M, Garrido B, Bonafos C, Perez-Rodriguez A, Morante JR
1505 - 1511	Structural, ellipsometry and photoluminescence spectroscopy studies of silicon nanograins embedded in a silica matrix Charvet S, Madelon R, Rizk R
1513 - 1519	Transport mechanisms and charge trapping in thin dielectric/Si nano-crystals structures De Salvo B, Ghibaudo G, Luthereau P, Baron T, Guillaumot B, Reimbold G