Device damage due to plasma process-induced charging continues to be a great threat and concern in modern CMOS technologies. This paper investigates NMOS vs. PMOS device sensitivity to plasma charging originating from various processing steps. This dependence is studied with respect to the gate oxide thickness and large antenna devices are used to evaluate device yield, latent damage, and residual effect of charging on device performance and reliability. In addition to results obtained for oxides of 40-90 Angstrom, specific studies are performed to explore the resistance to charging damage in CMOS devices with 50 Angstrom gate oxide grown with various oxidation processes.