Solid-State Electronics

Solid-State Electronics, Vol.62, No.1 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (34 articles)

1 - 4	Tunneling coefficient for GaN Schottky barrier diodes Ozbek AM, Baliga BJ
5 - 13	Atomistic and electrical simulations of a GaN-AlN-(4H)SiC heterostructure optically-triggered vertical power semiconductor device Bose S, Mazumder SK
14 - 18	Efficiency improvement of polymer light-emitting devices using titanium and titanium dioxide as electron injecting layers Aleksandrova M, Rassovska M, Dobrikov G
19 - 24	Impact of drain bias stress on forward/reverse mode operation of amorphous ZIO TFTs Dey A, Allee DR, Clark LT
25 - 30	Electrical properties of metal-ferroelectric-insulator-semiconductor structure using BaxSr1-xTiO3 for ferroelectric-gate field effect transistor Saif AA, Poopalan P
31 - 39	A computationally efficient compact model for fully-depleted SOI MOSFETs with independently-controlled front- and back-gates Lu DD, Dunga MV, Lin CH, Niknejad AM, Hu CM
40 - 43	Bipolar resistive switching of chromium oxide for resistive random access memory Chen SC, Chang TC, Chen SY, Chen CW, Chen SC, Sze SM, Tsai MJ, Kao MJ, Huang FSY
44 - 47	Structural and electrical characteristics of RF-sputtered HfO2 high-k based MOS capacitors Tirmali PM, Khairnar AG, Joshi BN, Mahajan AM
48 - 61	An effective thermal circuit model for electro-thermal simulation of SOI analog circuits Cheng MC, Zhang K
62 - 66	Thermally generated leakage current mechanisms of metal-induced laterally crystallized n-type poly-Si TFTs under hot-carrier stress Zhu Z
67 - 71	Study of nitrogen impact on V-FB-EOT roll-off by varying interfacial SiO2 thickness Cho M, Akheyar A, Aoulaiche M, Degraeve R, Ragnarsson LA, Tseng J, Hoffmann TY, Groeseneken G
72 - 76	The performance improvement evaluation for SiGe-based IR detectors Kolandouz M, Farniya AA, Ostling M, Radarnson HH
77 - 81	The influence of visible light on the gate bias instability of In-Ga-Zn-O thin film transistors Kim S, Kim S, Kim C, Park J, Song I, Jeon S, Ahn SE, Park JS, Jeong JK
82 - 89	Investigation of scalability of In0.7Ga0.3As quantum well field effect transistor (QWFET) architecture for logic applications Hwang E, Mookerjea S, Hudait MK, Datta S
90 - 93	Bipolar switching characteristics of low-power Geo resistive memory Cheng CH, Chen PC, Liu SL, Wu TL, Hsu HH, Chin A, Yeh FS
94 - 98	Hot-electron induced degradations in GaN-based LEDs fabricated on nanoscale epitaxial lateral overgrown layers Zhang ZW, Zhu CF, Fong WK, Leung KK, Chan PKL, Surya C
99 - 105	Harmonic distortion of 2-MOS structures for MOSFET-C filters implemented with n-type unstrained and strained FINFETS Doria RT, Simoen E, Claeys C, Martino JA, Pavanello MA
106 - 109	Buried-Pt gate InP/In0.52Al0.48As/In0.7Ga0.3As pseudomorphic HEMTs Shin SH, Kim TW, Song JI, Jang JH
110 - 114	Solution processed inverter based on zinc oxide nanoparticle thin-film transistors with poly(4-vinylphenol) gate dielectric Wolff K, Hilleringmann U
115 - 122	MOSFET modeling for design of ultra-high performance infrared CMOS imagers working at cryogenic temperatures: Case of an analog/digital 0.18 mu m CMOS process Martin P, Royet AS, Guellec F, Ghibaudo G
123 - 127	Generalization of the van der Pauw relationship derived from electrostatics Weiss JD
128 - 131	Improvement on low-temperature deposited HfO2 film and interfacial layer by high-pressure oxygen treatment Yang PC, Chang TC, Chen SC, Su HH, Lu J, Huang HC, Gan DS, Ho NJ
132 - 137	Germanium vertical Tunneling Field-Effect Transistor Hahnel D, Oehme M, Sarlija M, Karmous A, Schmid M, Werner J, Kirfel O, Fischer I, Schulze J
138 - 141	Study of Shubnikov-de Haas oscillations and measurement of hole effective mass in compressively strained InXGa1-XSb quantum wells Nainani A, Irisawa T, Bennett BR, Boos JB, Ancona MG, Saraswat KC
142 - 145	Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy Fu YK, Lu YH, Jiang RH, Chen BC, Fang YH, Xuan R, Su YK, Lin CF, Chen JF
146 - 151	Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation Rodrigues M, Galeti M, Martino JA, Collaert N, Simoen E, Claeys C
152 - 155	Comparative study of AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with Al2O3 and HfO2 gate oxide Miyazaki E, Goda Y, Kishimoto S, Mizutani T
156 - 160	Design, fabrication, and evaluation of a 5 F-5 V prototype of solid-state PANI based supercapacitor Khandpekar MM, Kushwaha RK, Pati SP
161 - 164	Analysis of "on" and "off" times for thermally driven VO2 metal-insulator transition nanoscale switching devices Zhang Y, Ramanathan S
165 - 173	Physics-based compact model for ultra-scaled FinFETs Yesayan A, Pregaldiny F, Chevillon N, Lallement C, Sallese JM
174 - 184	Three-dimensional analytic modelling of front and back gate threshold voltages for small geometry fully depleted SOI MOSFET's Meel K, Gopal R, Bhatnagar D
185 - 188	High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate Yu W, Zhang B, Zhao QT, Hartmann JM, Buca D, Nichau A, Luptak R, Lopes JM, Lenk S, Luysberg M, Bourdelle KK, Wang X, Mantl S
189 - 194	High quality relaxed Ge layers grown directly on a Si(001) substrate Shah VA, Dobbie A, Myronov M, Leadley DR
195 - 201	Mobility analysis of surface roughness scattering in FinFET devices Lee JW, Jang D, Mouis M, Kim GT, Chiarella T, Hoffmann T, Ghibaudo G