High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Yu W; Zhang B; Zhao QT; Hartmann JM; Buca D; Nichau A; Luptak R; Lopes JM; Lenk S; Luysberg M; Bourdelle KK; Wang X; Mantl S

Solid-State Electronics, Vol.62, No.1, 185-188, 2011

DOI10.1016/j.sse.2011.03.002 Export Citation

High mobility compressive strained Si0.5Ge0.5 quantum well p-MOSFETs with higher-k/metal-gate

Yu W, Zhang B, Zhao QT, Hartmann JM, Buca D, Nichau A, Luptak R, Lopes JM, Lenk S, Luysberg M, Bourdelle KK, Wang X, Mantl S

Strained SiGe quantum well p-MOSFETs with LaLuO3 higher-k dielectric were fabricated and characterized. The strained Si/strained Si0.5Ge0.5/strained SOI heterostructure transistors showed good output and transfer characteristics with an I-on/I-off ratio of 10(5). The extracted hole mobility shows an enhancement of about 2.5 times over Si universal hole mobility and no degradation compared to HfO2 or even SiO2 gate dielectric devices. (C) 2011 Elsevier Ltd. All rights reserved.

Keywords:High-k;HfO2;LaLuO3;SiGe;Hole mobility;Quantum well MOSFET