Solid-State Electronics

Solid-State Electronics, Vol.57, No.1 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (18 articles)

1 - 8	Effects of tail states on the conduction mechanisms in silicon carbide thin films with high carbon content Sel K, Akaoglu B, Atilgan I, Katircioglu B
9 - 13	Efficiency droop behavior of GaN-based light emitting diodes under reverse-current and high-temperature stress Shao XJ, Yan DW, Lu H, Chen DJ, Zhang R, Zheng YD
14 - 18	Time-dependent thermal crosstalk in multifinger AlGaN/GaN HEMTs and implications on their electrical performance Manoi A, Pomeroy JW, Lossy R, Pazirandeh R, Wurfl J, Uren MJ, Martin T, Kuball M
19 - 22	Microwave absorption properties of gold nanoparticle doped polymers Jiang C, Ouattara L, Ingrosso C, Curri ML, Krozer V, Boisen A, Jakobsen MH, Johansen TK
23 - 30	A new robust non-local algorithm for band-to-band tunneling simulation and its application to Tunnel-FET Shen C, Yang LT, Samudra G, Yeo YC
31 - 34	Analytical threshold voltage model for lightly doped short-channel tri-gate MOSFETs Tsormpatzoglou A, Tassis DH, Dimitriadis CA, Ghibaudo G, Collaert N, Pananakakis G
35 - 38	Efficient fluorescent white organic light-emitting devices based on a ultrathin 5,6,11,12-tetraphenylnaphthacene layer Xue Q, Zhang SM, Xie GH, Zhang ZS, Zhao L, Luo Y, Chen P, Zhao Y, Liu SY
39 - 42	Low dark current and internal gain mechanism of GaN MSM photodetectors fabricated on bulk GaN substrate Xie F, Lu H, Xiu XQ, Chen DJ, Han P, Zhang R, Zheng YD
43 - 51	Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET Ortiz-Conde A, Garcia-Sanchez FJ
52 - 60	Compact modeling of CMOS transistors under variable uniaxial stress Wacker N, Richter H, Hassan MU, Rempp H, Burghartz JN
61 - 66	A physical compact DC drain current model for long-channel undoped ultra-thin body (UTB) SOI and asymmetric double-gate (DG) MOSFETs with independent gate operation Lime F, Ritzenthaler R, Ricoma M, Martinez F, Pascal F, Miranda E, Faynot O, Iniguez B
67 - 72	In-depth physical investigation of GeOI pMOSFET by TCAD calibrated simulation Grandchamp B, Jaud MA, Scheiblin P, Romanjek K, Hutin L, Le Royer C, Vinet M
73 - 75	n(+)-Doped-layer free amorphous silicon thin film solar cells fabricated with the CuMg alloy as back contact metal Wang MC, Chang TC, Tsao SW, Chen YZ, Tseng SC, Hsu TC, Jan DJ, Ai CF, Chen JR
76 - 79	The effect of nitrogen plasma anneals on interface trap density and channel mobility for 4H-SiC MOS devices Zhu XG, Ahyi AC, Li MY, Chen ZJ, Rozen J, Feldman LC, Williams JR
80 - 82	Control of threshold voltage and improved subthreshold swing in enhancement-mode InGaP/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor Lee KW, Lin HC, Wu CC, Lee FM, Wang YH
83 - 86	Mobility in ultrathin SOI MOSFET and pseudo-MOSFET: Impact of the potential at both interfaces Hamaide G, Allibert F, Andrieu F, Romanjek K, Cristoloveanu S
87 - 89	Dependence of off-leakage current on channel film quality in poly-Si thin-film transistors and analysis using device simulation Kimura M, Dimitriadis C
90 - 92	Tuning the spectrometric properties of white light by surface plasmon effect using Ag nanoparticles in a colour converting light-emitting diode Chandramohan S, Ryu BD, Uthirakumar P, Kang JH, Kim HK, Kim HG, Hong CH