Solid-State Electronics

Solid-State Electronics, Vol.94 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (19 articles)

1 - 5	Enhanced endurance reliability and low current operation for AlOx/HfOx based unipolar RRAM with Ni electrode Chen YS, Chen PS, Lee HY, Wu TY, Tsai KH, Chen F, Tsai MJ
6 - 10	Chromatic-stability white organic light emitting diodes based on phosphorescence doped electron transport layer Zhou PC, Wang FF, Lin H, Li XF, Tong L, Wei N, Gao ZX, Wei B
11 - 14	Flexible thin-film transistors on planarized parylene substrate with recessed individual backgates Farkas B, Nyberg T, Nanai L
15 - 19	Thermal stability of multilayer Ti2AlN-based ohmic contacts to n-GaN in ambient air Borysiewicz MA, Mysliwiec M, Golaszewska K, Jakiela R, Dynowska E, Kaminska E, Piotrowska A
20 - 22	Complex-coupled edge-emitting photonic crystal distributed feedback quantum cascade lasers at lambda similar to 7.6 mu m Zhang JC, Liu YH, Jia ZW, Yao DY, Yan FL, Liu FQ, Wang LJ, Liu JQ, Wang ZG
23 - 27	Optimization of uniaxial stress for high electron mobility on biaxially-strained n-MOSFETs Sun W, Shin H
28 - 31	Tunable low-pass MEMS filter using defected ground structures (DGS) Guo XL, Xu C, Zhang GA, Zhang ZJ, Yin HH, Wang ZL
32 - 38	ON-state characteristics of proton irradiated 4H-SiC Schottky diode: The calibration of model parameters for device simulation Vobecky J, Hazdra P, Zahlava V, Mihaila A, Berthou M
39 - 43	Switching phenomenon in TlGaSe2 layered semiconductor Seyidov MY, Suleymanov RA, Balaban E, Sale Y
44 - 50	Compact model of power MOSFET with temperature dependent Cauer RC network for more accurate thermal simulations Marek J, Chvala A, Donoval D, Pribytny P, Molnar M, Mikolasek M
51 - 55	Field-dependent charge trapping analysis of ONO inter-poly dielectrics for NAND flash memory applications Moon P, Lim JY, Youn TU, Park SK, Yun I
56 - 60	Characterization of deep electron traps in 4H-SiC Junction Barrier Schottky rectifiers Gelczuk L, Dabrowska-Szata M, Sochacki M, Szmidt J
61 - 65	Impedance spectroscopy analysis of the switching mechanism of reduced graphene oxide resistive switching memory Ho NT, Senthilkumar V, Kim YS
66 - 71	Investigating and modeling impact ionization current in MOSFETs Chau Q
72 - 81	Interface phonon modes of dual-gate MOSFET system Zhang NZ, Dutta M, Stroscio MA
82 - 85	P-N junction and metal contact reliability of SiC diode in high temperature (873 K) environment Chand R, Esashi M, Tanaka S
86 - 90	Improvement of the multi-level cell performance by a soft program method in flash memory devices Park JK, Lee KH, Pyi SH, Lee SH, Cho BJ
91 - 97	Compact core model for Symmetric Double-Gate Junctionless Transistors Cerdeira A, Avila F, Iniguez B, de Souza M, Pavanello MA, Estrada M
98 - 102	Resistive switching of Cu/SiC/Au memory devices with a high ON/OFF ratio Zhong L, Reed PA, Huang R, de Groot CH, Jiang L