In this study, we investigated the resistive switching behavior of pristine graphene oxide and thermally reduced GO. Impedance spectroscopy and current-voltage analysis were used to verify the possible physical mechanism of the switching operation. Our observations demonstrated that, the switching operation originates from the oxidation/reduction at the top interface of Al electrode and oxygen migration inside the active layer. Reversible redox reaction Al+1 + xO (2) <-> AlOx is ground for the conduction electrons. (C) 2014 Elsevier Ltd. All rights reserved.