Solid-State Electronics

Solid-State Electronics, Vol.83 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (21 articles)

1 - 1	SELECTED PAPERS FROM THE 6TH INTERNATIONAL SIGE TECHNOLOGY AND DEVICE MEETING (ISTDM 2012) Liu TJK, Koester SJ, Hartmann JM, Loo R, Yeo YC, Carroll M
2 - 9	Low temperature RPCVD epitaxial growth of Si1-xGex using Si2H6 and Ge2H6 Wirths S, Buca D, Tiedemann AT, Bernardy P, Hollander B, Stoica T, Mussler G, Breuer U, Mantl S
10 - 17	Mushroom-free selective epitaxial growth of Si, SiGe and SiGe:B raised sources and drains Hartmann JM, Benevent V, Barnes JP, Veillerot M, Lafond D, Damlencourt JF, Morvan S, Previtali B, Andrieu F, Loubet N, Dutartre D
18 - 24	Morphology evolution of epitaxial SiGe and Si in patterns Seiss B, Dutartre D
25 - 29	Phosphorus atomic layer doping in Ge using RPCVD Yamamoto Y, Kurps R, Mai C, Costina I, Murota J, Tillack B
30 - 36	Band-edge electronic structures, and pre-existing defects in remote plasma deposited (RPD) non-crystalline (nc-) SiO2 and GeO2 Lucovsky G
37 - 41	Strain engineering of ultra-thin silicon-on-insulator structures using through-buried-oxide ion implantation and crystallization Ding YJ, Cheng R, Zhou Q, Du AY, Daval N, Nguyen BY, Yeo YC
42 - 45	Fabrication of bonded GeOI substrates with thin Al2O3/SiO2 buried oxide layers Moriyama Y, Ikeda K, Kamimuta Y, Oda M, Irisawa T, Nakamura Y, Sakai A, Tezuka T
46 - 49	Characterization of anisotropic strain relaxation after isolation for strained SGOI and SiGe/Si structure with newly developed high-NA and oil-immersion Raman method Usuda K, Tezuka T, Kosemura D, Tomita M, Ogura A
50 - 55	Analysis of trap-assisted tunneling in vertical Si homo-junction and SiGe hetero-junction Tunnel-FETs Vandooren A, Leonelli D, Rooyackers R, Hikavyy A, Devriendt K, Demand M, Loo R, Groeseneken G, Huyghebaert C
56 - 60	Effect of gate metal on chemical bonding state in metal/Pr-oxide/Ge gate stack structure Kato K, Sakashita M, Takeuchi W, Taoka N, Nakatsuka O, Zaima S
61 - 65	Analysis of USJ formation with combined RTA/laser annealing conditions for 28 nm high-k/metal gate CMOS technology using advanced TCAD for process and device simulation Bazizi EM, Zaka A, Benistant F
66 - 70	Strained germanium-tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation Wang LX, Su SJ, Wang W, Gong X, Yang Y, Guo PF, Zhang GZ, Xue CL, Cheng BW, Han GQ, Yeo YC
71 - 75	Epitaxial growth and anisotropic strain relaxation of Ge1-xSnx layers on Ge(110) substrates Asano T, Shimura Y, Taoka N, Nakatsuka O, Zaima S
76 - 81	The SiGeSn approach towards Si-based lasers Sun G, Yu SQ
82 - 86	Development of epitaxial growth technology for Ge1-xSnx alloy and study of its properties for Ge nanoelectronics Nakatsuka O, Shimura Y, Takeuchi W, Taoka N, Zaima S
87 - 91	Room-temperature electroluminescence from tensile strained double-heterojunction Germanium pin LEDs on Silicon substrates Kaschel M, Schmid M, Gollhofer M, Werner J, Oehme M, Schulze J
92 - 98	Ge quantum well optoelectronic devices for light modulation, detection, and emission Chaisakul P, Marris-Morini D, Isella G, Chrastina D, Rouifed MS, Frigerio J, Vivien L
99 - 106	Charge carrier traffic at self-assembled Ge quantum dots on Si Kaniewska M, Engstrom O, Karmous A, Oehme M, Petersson G, Kasper E
107 - 112	n-Si-p-Si1-xGex nanowire arrays for thermoelectric power generation Xu B, Li CB, Myronov M, Fobelets K
113 - 117	Terahertz imaging using strained-Si MODFETs as sensors Meziani YM, Garcia-Garcia E, Velazquez-Perez JE, Coquillat D, Dyakonova N, Knap W, Grigelionis I, Fobelets K