The growth of intrinsic SiGe and, n- and p-type doping of Si and SiGe layers was studied using a Reduced Pressure Chemical Vapor Deposition AIXTRON TRICENT (R) cluster tool. Most emphasis was placed on the growth kinetics in the low temperature regime of 450-600 degrees C which is characterized by surface limited reactions. A low growth activation energy of 0.667 eV was achieved by using Si2H6 and Ge2H6 precursors. Fully strained SiGe layers with Ge contents up to 53% at a record thickness of 29 nm were grown at a very low growth temperature of 450 degrees C. The dopant incorporation in Si strongly increases with the B2H6 flux but saturates rapidly with increasing PH3 flow. High dopant concentrations of 1.1 x 10(20) cm(-3) and 1 x 10(21) cm(-3) were obtained for Si:P and Si:B doping, respectively, at a growth temperature of 600 degrees C. For Si0.56Ge0.44 layers the maximum dopant concentrations achieved were 5 x 10(20) cm(-3) for P at 500 degrees C and 4 x 10(20) cm(-3) for B doping at 600 degrees C. (C) 2013 Elsevier Ltd. All rights reserved.