Solid-State Electronics

Solid-State Electronics, Vol.132 Entire volume, number list

ISSN: 0038-1101 (Print)

In this Issue (18 articles)

1 - 5	Vacuum field-effect transistor with a deep submicron channel fabricated by electro-forming Wang X, Shen ZH, Wu SL, Zhang JT
6 - 11	PLL application research of a broadband MEMS phase detector: Theory, measurement and modeling Han JZ, Liao XP
12 - 18	Temperature dependence of trapping effects in metal gates/Al2O3/InGaAs stacks Palumbo F, Pazos S, Aguirre F, Winter R, Krylov I, Eizenberg M
19 - 23	HfO2-based resistive switching memory with CNTs electrode for high density storage Cheng WK, Wang F, Han YM, Zhang ZC, Zhao JS, Zhang KL
24 - 30	3-D multilayer monolithic integration of vertical-oriented double-heterojunction GaAs based pHEMT and thermal influence on device parameters Alim MA, Rezazadeh AA
31 - 38	Dielectric characterization of CuxS-NiySz/FNBR and CuS-NiySz/FNBR nanocomposites Balayeva OO, Azizov AA, Muradov MB, Eyvazova GM
39 - 44	Electrically heterogeneous high dielectric BaTi0.4(Fe0.5Nb0.5)(0.6)O-3 ceramic Patel PK, Yadav KL
45 - 48	Stacked resistive switches for AND/OR logic gates Kim MJ, Son KR, Park JH, Kim TG
49 - 56	On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT Acurio E, Crupi F, Magnone P, Trojman L, Meneghesso G, Iucolano F
57 - 63	Cu(In, Ga)Se-2 thin film solar cells grown at low temperatures Zhang W, Zhu H, Zhang L, Guo Y, Niu X, Li Z, Chen J, Liu Q, Mai Y
64 - 72	Analytical models for the 2DEG concentration and gate leakage current in AlGaN/GaN HEMTs Ahmed N, Dutta AK
73 - 79	Effect of nickel silicide gettering on metal-induced crystallized polycrystalline-silicon thin-film transistors Kim HY, Seok KH, Chae HJ, Lee SK, Lee YH, Joo SK
80 - 85	The high temperature DC characteristics of a high voltage lateral insulated-gate bipolar transistors with NPN anode in junction isolation technology Tsai YC, Gong J, Chan WC, Wu SY, Lien C
86 - 90	Effect of p-GaN layer grown with H-2 carrier gas on wall-plug efficiency of high-power LEDs Lu KF, Lin TK, Liou JK, Yang CD, Lee CY, Tsai JD
91 - 98	Modelling of resonant MEMS magnetic field sensor with electromagnetic induction sensing Liu S, Xu HY, Xu DH, Xiong B
99 - 102	Investigation on scalability of dual trench epitaxial diode for phase change memory Wang H, Liu B, Liu Y, Zhang C, Zhan YP, Xu Z, Gao D, Song ZT, Feng SL
103 - 108	Impact of residual defects caused by extension ion implantation in FinFETs on parasitic resistance and its fluctuation Matsukawa T, Liu YX, Mori T, Morita Y, Otsuka S, O'uchi S, Fuketa H, Migita S, Masahara M
109 - 114	Pulse area dependent gradual resistance switching characteristics of CMOS compatible SiNx-based resistive memory Kim MH, Kim S, Bang S, Kim TH, Lee DK, Cho S, Lee JH, Park BG