Vacuum field-effect transistors (VFETs) with channel lengths down to 500 nm (i.e., the deep submicron scale) were fabricated with the mature technology of the surface conduction electron emitter fabrication process in our former experiments. The vacuum channel of this new VFET was generated by using the electro-forming process. During electro-forming, the joule heat cracks the conductive film and then generates the submicron scale gap that serves as the vacuum channel. The gap separates the conductive film into two plane-to-plane electrodes, which serve as a source (cathode) electrode and a drain (anode) electrode of the VFET, respectively. Experimental results reveal that the fabricated device demonstrates a clear triode behavior of the gate modulation. Fowler-Nordheim theory was used to analyze the electron emission mechanism and operating principle of the device. (C) 2017 Elsevier Ltd. All rights reserved.